Media type: E-Article Title: High-Current Submicrometer Tri-Gate GaN High-Electron Mobility Transistors With Binary and Quaternary Barriers Contributor: Ture, Erdin; Bruckner, Peter; Godejohann, Birte-Julia; Aidam, Rolf; Alsharef, Mohamed; Granzner, Ralf; Schwierz, Frank; Quay, Rudiger; Ambacher, Oliver imprint: Institute of Electrical and Electronics Engineers (IEEE), 2016 Published in: IEEE Journal of the Electron Devices Society Language: Not determined DOI: 10.1109/jeds.2015.2503701 ISSN: 2168-6734 Origination: Footnote: Access State: Open Access