Fabrication of high quality factor GaAs/InAsSb photonic crystal microcavities by inductively coupled plasma etching and fast wet etching

Media type: E-Article
Title: Fabrication of high quality factor GaAs/InAsSb photonic crystal microcavities by inductively coupled plasma etching and fast wet etching
Contributor: González, Iván Prieto; Muñoz Camuñez, Luis Enrique; Taboada, Alfonso González; Robles Urdiales, Carmen; Ripalda Cobián, Jose María; Postigo Resa, Pablo Aitor
imprint: American Vacuum Society, 2014
Published in: Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena
Language: English
DOI: 10.1116/1.4836517
ISSN: 2166-2746; 2166-2754
Keywords: Materials Chemistry ; Electrical and Electronic Engineering ; Surfaces, Coatings and Films ; Process Chemistry and Technology ; Instrumentation ; Electronic, Optical and Magnetic Materials
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Description: <jats:p>The authors demonstrate high quality factor GaAs-based L9 photonic crystal microcavities (PCMs) with embedded InAsSb quantum dots with emission in 1.3 μm at room temperature. The fabrication process uses reactive ion beam etching with a CHF3/N2 gas mixture and reactive ion etching with a BCl3/N2 gas mixture to form PCMs on air-suspended slabs. An optimum N2 partial flux content of 0.65 and a successful removal of deposits formed during the membrane release by a fast wet etching in HF provide optical quality factors (Q-factors) as high as ∼30 000.</jats:p>

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