• Media type: E-Article
  • Title: Gate-tunable metafilm absorber based on indium silicon oxide
  • Contributor: Zhao, Hongwei; Zhang, Ran; Chorsi, Hamid T.; Britton, Wesley A.; Chen, Yuyao; Iyer, Prasad P.; Schuller, Jon A.; Negro, Luca Dal; Klamkin, Jonathan
  • imprint: Walter de Gruyter GmbH, 2019
  • Published in: Nanophotonics, 8 (2019) 10, Seite 1803-1810
  • Language: English
  • DOI: 10.1515/nanoph-2019-0190
  • ISSN: 2192-8614; 2192-8606
  • Origination:
  • Footnote:
  • Description: <jats:title>Abstract</jats:title> <jats:p>In this work, reconfigurable metafilm absorbers based on indium silicon oxide (ISO) were investigated. The metafilm absorbers consist of nanoscale metallic resonator arrays on metal-insulator-metal (MIM) multilayer structures. The ISO was used as an active tunable layer embedded in the MIM cavities. The tunable metafilm absorbers with ISO were then fabricated and characterized. A maximum change in the reflectance of 57% and up to 620 nm shift in the resonance wavelength were measured.</jats:p>
  • Access State: Open Access