Description:
<jats:p>The low temperature studies of SOI-structures have been carried out in a temperature range of 4.2÷300K at magnetic fields up to 14T. The samples with initial boron concentration of about 2.410<jats:sup>18</jats:sup>сm<jats:sup>-3 </jats:sup>have been investigated. The results of the studies of SOI-structure conductance at low temperatures in the range of hopping conductance and a possibility to use this material in sensors are analyzed.</jats:p>