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Media type:
E-Article
Title:
High Energy Resolution Detectors Based on 4H-SiC
Contributor:
Ivanov, Alexander M.;
Kalinina, Evgenia V.;
Kholuyanov, G.;
Strokan, Nikita B.;
Onushkin, G.;
Konstantinov, Andrey O.;
Hallén, Anders;
Kuznetsov, Andrej Yu.
Published:
Trans Tech Publications, Ltd., 2005
Published in:
Materials Science Forum, 483-485 (2005), Seite 1029-1032
Language:
Not determined
DOI:
10.4028/www.scientific.net/msf.483-485.1029
ISSN:
1662-9752
Origination:
Footnote:
Description:
The spectrometric characteristics of the detectors based on 4H-SiC using 4.8-7.7 MeV a-particles were determined. The Cr Schottky barriers with areas of 1×10-2 cm2 were performed^by vacuum thermal evaporation on 4H-SiC epitaxial layers grown by chemical vapor deposition (CVD) with thickness 26 and 50 µm. The concentrations of the uncompensated donors into CVD epitaxial layers were (6-10) ×1014 cm-3, that allowed to develop a detector depletion region up to30 µm using reverse bias of 400 V. The energy resolution less than 20 keV (0.34%) for lines of 5.0- 5.5 MeV was achieved that is twice as large of the resolution of high-precision Si-based detectors prepared on specialized technology. The maximum signal amplitude of 4H-SiC - detectors corresponding to the average electron-hole pair generation energy was found to be 7.70 eV.