Published in:
Materials Science Forum, 778-780 (2014), Seite 210-213
Language:
Not determined
DOI:
10.4028/www.scientific.net/msf.778-780.210
ISSN:
1662-9752
Origination:
Footnote:
Description:
The addition of hydrogen chloride (HCl) to our conventional CVD process allows for high growth rates up to 50 μm/h while maintaining the step-flow growth mode. Such epilayers exhibit quite low total concentrations of point defects less than 2 x 1013 cm-3. But, the HCl addition shows an ambivalent influence on the concentration of the lifetime killer defect Z1/2. For low growth rates, the Z1/2 concentration slightly decreases with increasing HCl addition. For higher growth rates, the Z1/2 concentration increases with increasing HCl addition.