Description:
<jats:p>This paper introduces n-channel normally-off Trench-MOSFETs on 4H-SiC featuring a blocking voltage of 600 V and 1200 V. The Trench-MOSFETs exhibit a specific room temperature on-state resistance <jats:italic>R</jats:italic><jats:sub>DS,on</jats:sub> of 1.5 mΩ cm² and 2.7 mΩ cm², respectively. It is shown that a further reduction of the <jats:italic>R</jats:italic><jats:sub>DS,on</jats:sub> by approximately 25 % can be achieved using square-shaped or hexagonal unit cells instead of stripe-shaped unit cells. The Trench-MOSFET switching characteristics using a double pulse setup with a switching current <jats:italic>I</jats:italic><jats:sub>sw</jats:sub> of 100 A and a switching voltage <jats:italic>V</jats:italic><jats:sub>sw</jats:sub> of 450 V is presented and discussed. The short turn-off and turn-on times in the range of several ten nanoseconds yield large maximum di<jats:sub>sw</jats:sub>/dt and dv<jats:sub>sw</jats:sub>/dt values, which enable highly efficient power conversion with low switching losses.</jats:p>