Published in:
Materials Science Forum, 858 (2016), Seite 341-344
Language:
Not determined
DOI:
10.4028/www.scientific.net/msf.858.341
ISSN:
1662-9752
Origination:
Footnote:
Description:
We present an extended model for the simulation of the effective minority carrier lifetime in 4H-SiC epiwafers after optical excitation. This multilayer model uses measured values (such as doping profile, point defect concentration and capture cross sections, epilayer thickness) as input parameters. The bulk lifetime and the diffusion constant are calculated from the actual time dependent excess carrier profiles, resulting in more realistic transients having different decay regimes than in other models. This enables a better understanding of optical lifetime measurements.