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Media type:
E-Article
Title:
The Impact of Non-Ideal Ohmic Contacts on the Performance of High-Voltage SiC MPS Diodes
Contributor:
Huang, Yaren;
Buettner, Jonas;
Lechner, Benedikt;
Wachutka, Gerhard
Published:
Trans Tech Publications, Ltd., 2019
Published in:
Materials Science Forum, 963 (2019), Seite 553-557
Language:
Not determined
DOI:
10.4028/www.scientific.net/msf.963.553
ISSN:
1662-9752
Origination:
Footnote:
Description:
The wide band gap of SiC semiconductor devices constitutes a serious challenge to build good Ohmic contacts on the surface of the p-type material. This is reflected in the numerical analysis of ”realistic” devices, where we have to cope with serious problems, such as a shifting threshold voltage, reduced forward conductivity, and no noticeable conductivity modulation by minority carrier injection from p+-emitters, in matching measured data with simulation results, as a consequence of the significant impact of non-ideal poor Ohmic contacts. In this work, we used a Schottky contact model together with a barrier tunneling model, instead of common ideal Ohmic contact model, to simulate the non-ideal Ohmic contact on SiC MPS diodes. Based on this approach, the I-V characteristics of real Ohmic contacts can be reproduced in high-fidelity simulations, providing us physical insight of the observed operational behavior.