Published in:
Materials Science Forum, 924 (2018), Seite 164-167
Language:
Not determined
DOI:
10.4028/www.scientific.net/msf.924.164
ISSN:
1662-9752
Origination:
Footnote:
Description:
Using a combination of photoluminescence and electrical characterization, defects in the epitaxial layer of unipolar 4H-SiC power devices were matched to device characteristics and statistically analyzed. In-grown triangles had no significant effect on diode and VDMOS blocking or conduction mode, while surface triangles lead to high leakage currents even below 1 V reverse bias.