Description:
<jats:p>A deep level transient spectroscopy (DLTS) study on <jats:italic>n</jats:italic>- and <jats:italic>p</jats:italic>-type diluted Si<jats:sub>1-<jats:italic>x</jats:italic></jats:sub>Ge<jats:italic><jats:sub>x</jats:sub></jats:italic> alloys (<jats:italic>x</jats:italic>=0, 0.011, 0.026, 0.046, and 0.070) is presented. Defect levels of several carbon-hydrogen (CH) complexes are observed. The high-resolution Laplace-DLTS technique allows us to detect configurations of defects which contain different numbers of Ge atoms in the first and second-nearest neighbourhood of the CH complexes. The electrical properties of the defects will be analysed and their origin will be discussed.</jats:p>