> Detailanzeige
Aleksandrov, L. N
[MitwirkendeR];
Alekseeva, O. K
[MitwirkendeR];
Ali, A. R
[MitwirkendeR];
Amelinckx, S
[MitwirkendeR];
Asmat, H
[MitwirkendeR];
Astie, B
[MitwirkendeR];
Babeṣ, V
[MitwirkendeR];
Barros, F. De S
[MitwirkendeR];
Barton, J
[MitwirkendeR];
Barua, A. K
[MitwirkendeR];
Batev, P. M
[MitwirkendeR];
Bińczycka, H
[MitwirkendeR];
Bloor, D
[MitwirkendeR];
Bordure, G
[MitwirkendeR];
Boswell, F. W
[MitwirkendeR];
Boudreaux, D. S
[MitwirkendeR];
Boulesteix, C
[MitwirkendeR];
Braillon, P
[MitwirkendeR];
Brossard, L
[MitwirkendeR];
Brümmer, O
[MitwirkendeR];
Bublik, V. T
[MitwirkendeR];
Burzo, E
[MitwirkendeR];
Bzinkovskaya, I. S
[MitwirkendeR];
Carstanjen, H. D
[MitwirkendeR];
[...]
Physica status solidi
: Volume 45, Number 2: February 16
- [Reprint 2021]
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- Medientyp: E-Book
- Titel: Physica status solidi : Volume 45, Number 2: February 16
- Beteiligte: Görlich [HerausgeberIn]; Aleksandrov, L. N [MitwirkendeR]; Alekseeva, O. K [MitwirkendeR]; Ali, A. R [MitwirkendeR]; Amelinckx, S [MitwirkendeR]; Asmat, H [MitwirkendeR]; Astie, B [MitwirkendeR]; Babeṣ, V [MitwirkendeR]; Barros, F. De S [MitwirkendeR]; Barton, J [MitwirkendeR]; Barua, A. K [MitwirkendeR]; Batev, P. M [MitwirkendeR]; Bińczycka, H [MitwirkendeR]; Bloor, D [MitwirkendeR]; Bordure, G [MitwirkendeR]; Boswell, F. W [MitwirkendeR]; Boudreaux, D. S [MitwirkendeR]; Boulesteix, C [MitwirkendeR]; Braillon, P [MitwirkendeR]; Brossard, L [MitwirkendeR]; Brümmer, O [MitwirkendeR]; Bublik, V. T [MitwirkendeR]; Burzo, E [MitwirkendeR]; Bzinkovskaya, I. S [MitwirkendeR]; Carstanjen, H. D [MitwirkendeR]; Chopra, K. L [MitwirkendeR]; Cohkelis, J [MitwirkendeR]; Collongues, R [MitwirkendeR]; Corbett, J. M [MitwirkendeR]; Cristea, V [MitwirkendeR]; Dabgys, A [MitwirkendeR]; Das, S. R [MitwirkendeR]; De Menezes, J.V [MitwirkendeR]; Degauque, J [MitwirkendeR]; Dlubek, G [MitwirkendeR]; Dolocan, V [MitwirkendeR]; Dutt, M. B [MitwirkendeR]; Dünstl, J [MitwirkendeR]; Eichleb, H. J [MitwirkendeR]; Ejder, E [MitwirkendeR]; Farid, Z [MitwirkendeR]; Feder, R [MitwirkendeR]; Filippov, G. A [MitwirkendeR]; Fischer, A [MitwirkendeR]; Frtuchart, D [MitwirkendeR]; Fruchart, R [MitwirkendeR]; Fujimoto, F [MitwirkendeR]; Fujimuba, T [MitwirkendeR]; Fujita, H [MitwirkendeR]; Gbabski, M. W [MitwirkendeR]; Gerasimenko, N. N [MitwirkendeR]; Gignoux, D [MitwirkendeR]; Glinchuk, K.D [MitwirkendeR]; Gotô, T [MitwirkendeR]; Gourier, D [MitwirkendeR]; Greenberg, B. A [MitwirkendeR]; Habtig, Ch [MitwirkendeR]; Hellborg, R [MitwirkendeR]; Hirose, M [MitwirkendeR]; Ivanov, M. A [MitwirkendeR]; Ivanovitch, M. D [MitwirkendeR]; Jacobsen, G [MitwirkendeR]; Jacquemin, J. L [MitwirkendeR]; Kafediiska, E. I [MitwirkendeR]; Kalinin, V. V [MitwirkendeR]; Kamel, R [MitwirkendeR]; Kamiyoshi, K [MitwirkendeR]; Karekar, R. N [MitwirkendeR]; Khachaturyan, A. G [MitwirkendeR]; Kieu, V. C [MitwirkendeR]; Kirschner, J [MitwirkendeR]; Knof, J [MitwirkendeR]; Koóka, J [MitwirkendeR]; Kristofik, J [MitwirkendeR]; Krupski, M [MitwirkendeR]; Kubin, L. P [MitwirkendeR]; Landgraf-Dietz, D [MitwirkendeR]; Lazǎr, D. P [MitwirkendeR]; Lindén, M [MitwirkendeR]; Livage, J [MitwirkendeR]; Lochmann, W [MitwirkendeR]; Lojkowski, W [MitwirkendeR]; Lovyagin, R. N [MitwirkendeR]; Löbl, G [MitwirkendeR]; Maeda, H [MitwirkendeR]; Maenhout-Van Deb Voest, W [MitwirkendeR]; Marais, A [MitwirkendeR]; Matsuura, E [MitwirkendeR]; Medvedkin, G.A [MitwirkendeR]; Mende, G [MitwirkendeR]; Mercebon, T [MitwirkendeR]; Moish, U. V [MitwirkendeR]; Nakayan, J [MitwirkendeR]; Nath, Prem [MitwirkendeR]; Nihoul, J [MitwirkendeR]; Nihoul-Boutang, G [MitwirkendeR]; Niziol, S [MitwirkendeR]; Ochiai, Y [MitwirkendeR]; O’Handley, R . C [MitwirkendeR]; Palii, L [MitwirkendeR]; Phadke, S. D [MitwirkendeR]; Pielaszek, J [MitwirkendeR]; Pillay, R. G [MitwirkendeR]; Pipinys, P [MitwirkendeR]; Pismennyi, Yu. G [MitwirkendeR]; Ploog, K [MitwirkendeR]; Porte, M [MitwirkendeR]; Prodan, A [MitwirkendeR]; Prokhorovich, A.V [MitwirkendeR]; Rao, A. Ranga [MitwirkendeR]; Rimeika, A [MitwirkendeR]; Roggen, J [MitwirkendeR]; Roy, M. K [MitwirkendeR]; Rubin, L [MitwirkendeR]; Rud, Yu.V [MitwirkendeR]; Rumynina, A. F [MitwirkendeR]; Runge, H [MitwirkendeR]; Samartsev, V. V [MitwirkendeR]; Sarrak, V.I [MitwirkendeR]; Schnittler, Ch [MitwirkendeR]; Sen, S. K [MitwirkendeR]; Senateur, J. P [MitwirkendeR]; Serttghetti, J [MitwirkendeR]; Shantarovich, V. P [MitwirkendeR]; Shtyrkov, E. I [MitwirkendeR]; Siethoff, H [MitwirkendeR]; Simeonov, S. S [MitwirkendeR]; Simonov, P. A [MitwirkendeR]; Sizmann, R [MitwirkendeR]; Smektenko, P. S [MitwirkendeR]; Sodomka, L [MitwirkendeR]; Sokolova, V.I [MitwirkendeR]; Stals, L [MitwirkendeR]; Stankowski, J [MitwirkendeR]; Stenin, S. I [MitwirkendeR]; Stevens, G. C [MitwirkendeR]; Strocka, B [MitwirkendeR]; Sumida, N [MitwirkendeR]; Suryanarayana, C [MitwirkendeR]; Svechnikov, S. V [MitwirkendeR]; Szytuła, A [MitwirkendeR]; Tandon, P. N [MitwirkendeR]; Theby, J [MitwirkendeR]; Todoković, J [MitwirkendeR]; Uchida, Y [MitwirkendeR]; Valov, Yu.A [MitwirkendeR]; Van Landuyt, J [MitwirkendeR]; Van Sande, M [MitwirkendeR]; Van Tendeloo, G [MitwirkendeR]; Vankak, V. D [MitwirkendeR]; Varin, R. A [MitwirkendeR]; Vaughan, W. R [MitwirkendeR]; Vivien, D [MitwirkendeR]; Wieser, E [MitwirkendeR]; Worl, H [MitwirkendeR]; Wyrzykowski, J. W [MitwirkendeR]; Yangui, B [MitwirkendeR]; Zaręba, A [MitwirkendeR]; Zyuganov, A. N [MitwirkendeR]
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Erschienen:
Berlin; Boston: De Gruyter, [2021]
[Online-Ausgabe] - Erschienen in: Physica status solidi ; Volume 45, Number 2 ; A
- Ausgabe: Reprint 2021
- Umfang: 1 Online-Ressource (432 p)
- Sprache: Deutsch
- DOI: 10.1515/9783112480724
- ISBN: 9783112480724
- Identifikator:
- Schlagwörter: SCIENCE / General
- Art der Reproduktion: [Online-Ausgabe]
- Entstehung:
-
Anmerkungen:
In German
Mode of access: Internet via World Wide Web
- Beschreibung: Frontmatter -- Classification Scheme -- Contents -- Systematic List -- Original Papers -- The Effect of Implantation Temperature on the Mechanism of Misfit Dislocation Formation -- Measurement of the Electron Drift Velocity in InSb up to Fields of 800 V/cm in the Presence of Impact Ionization -- Strain Energy Controlled Shape of Crystals Forming Due to a Martensite Transformation or Decomposition -- On the Theory of Plastic Deformation with an Account of Dislocation Transformations of Several Types -- Electron Channeling in <111> Direction of Tungsten Crystals II. Energy Range of 1000 to 2000 keV2) -- Annealing Spectrum of Cold-Worked Dilute Al-Li Alloys -- Phonon-Assisted Auger Recombination in Indirect Gap Semiconductors -- Laser Induced Gratings in CdS -- α-Particle Irradiation Damage and Stage I Recovery in Zinc2) -- Magnetocrystalline Anisotropy of Pr(Co1_xCux)5 Compounds Experiment and Theoretical Analysis -- Plastic Deformation of Calcite Single Crystals Deformed in Compression Parallel to [111] -- Photoconductivity and the Negative Differential Photo-Effect in Sulfur-Annealed ZnS Single Crystals -- On the Ordering of Fe Atoms in FexNbS2 -- ESR Studies of a Diacetylene Polymer I. Partially Crystalline Polymer Extracts -- Evidence for the Interaction between Magnetic Domain Walls and Dislocations in High-Purity Iron from Magnetomechanical Damping Experiments -- Etude au moyen de l'ordre directionnel d'une série de ferrites de manganèse à excès de manganèse Valence des cations et répartition de ces ions sur les sites A et B -- Autoradiographic Detection of Getter Effect of Argon-Implanted Layers in Silicon -- Ultrasonic Investigation of the Phase Transitions in NH4Cl 1-x Brx Mixed Crystals -- p-n Junctions in the Surface Region of Silicon Obtained by Evaporation of Silicon in Ultrahigh Vacuum -- Lattice Location and Determination of Thermal Amplitudes of Deuterium in a-PdD0.007by Channeling -- Optical Properties of PbxSn 1-x O2Films2) -- The Mean Square Atomic Displacements and Enthalpies of Vacancy Formation in Some Semiconductors -- Coupling of Surface Acoustic Waves Propagating in Two Separated Piezoelectric Media -- A Study by Transmission Electron Microscopy and Diffraction of the Ternary Alloy System Cu2AuPd2 -- AC Conductivity of CdAs2-Based Glasses1 -- Spreading of Extrinsic Grain Boundary Dislocations in Plastically Deformed Aluminium -- Current Controlled Negative Resistance in GaAs at Low Temperatures -- Numerical Simulation of the AC Electrical Properties of Random Inhomogeneous Systems Application to Heat-Treated Polymers -- New High-Pressure Phase in [Ni(NH3)6] (CLO4)2 Detected by EPR -- Structure magnétique des MnCoSi -- ESR of Copper-Doped β-Alumina Localization of Cu 2+ and Linewidth Effect -- Magnetic Properties of Transition Metal-Metalloid Glasses A Charge Transfer Model -- The Seebeck Effect on Nb-Doped Ti02 Rutile -- α <100> Dislocation Loops in Magnesium Oxide -- Regime of Contact Emission Limited Current with Weak Harmonic Distortion of Steady Bias -- Influence of Upper Laue Areas on Fine Structure of Bend Contours near a High Symmetry Axis -- Dynamic Holograms on the Superposition States of Atoms -- The Diffusion of Iron in Copper and of Nickel in Silver -- Structure of Vacuum Evaporated CdxZn 1-x S Thin Films -- Schottky Barrier on W-GUAs Contact -- Figure -- Short Notes -- Imaging of Photorefractive Effects in LiNbO3 by Double Crystal X-Ray Reflection Topography -- Comparison of Positron Annihilation and X-Ray Estimations of the Dislocation Density and Depth of Dislocation Profiles in Nickel T ransformed into Hydride and Decomposed -- The Role of Different Local Centres in the Determination of the Concentration Dependence of the Intrinsic Emission Intensity in n-Type GaAs -- Photoconductivity of p-Type CdSnP2 Single Crystals -- Spin-Lattice Relaxation at High Temperatures in Heavily Doped n-Type Silicon -- Investigation of Magnetic Preferred Directions in an Fe-Mn Base Alloy -- Hyperfine Magnetic Field at Sn in Heusler Alloys Rh2MnSn and Rh2NiSn -- Current Pulses in ZnS;Cu Crystals Stimulated by Electric Field at Low Temperatures -- Surface Structure Determination via LEED Rotation Diagrams and the Relaxation of W (001) -- A Comparison of Calculated Arsenic Implantation Profiles in Silicon with Experimental Results -- A Simple Method for the Determination of Parameters of Ion Implanted Doping Profiles by Means of Threshold Voltage Measurements of MOSFET's -- Solute-Vacancy Binding Energies in Magnesium Alloys -- On the Creep of Germanium and Silicon -- On the Mossbauer Spectrum of FeC2O4·2H2O -- Paramagnetic Behaviour of Gd(FexCo 1-x)2 Compounds -- Magnetic Properties and Structures of TbAlGa and HoAlGa -- Some Electrical Properties of Bi2O3 Thin Films -- Positron Annihilation for Martensite Defect Identification -- Photocurrents through Polythiourea and Polymalononitrile Thin Films -- Channeling Studies of As-Grown GaN -- Mechanoluminescent Spectra of Silicon Carbide Powders -- Growth of AL2O3 Layer on MBE GaAs -- Some New Aspects of the SCLC Characteristic of Homogeneous Insulators with Traps -- Piezoconductivity of ft-Rhombohedral Boron -- Pre-printed Titles
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