> Detailanzeige
Alameda, J. M
[MitwirkendeR];
Alonso, J. A
[MitwirkendeR];
Alyabiev, V. M
[MitwirkendeR];
Aroba, A. K
[MitwirkendeR];
Aronov, D. A
[MitwirkendeR];
Atmani, H
[MitwirkendeR];
Aubin, M
[MitwirkendeR];
Azimov, S. A
[MitwirkendeR];
Baker, I
[MitwirkendeR];
Baltrunas, D
[MitwirkendeR];
Barbulescu, A
[MitwirkendeR];
Basson, J. H
[MitwirkendeR];
Baum, B. A
[MitwirkendeR];
Berthel, K.-H
[MitwirkendeR];
Besirganyan, P. A
[MitwirkendeR];
Blasek, G
[MitwirkendeR];
Blazha, M. G
[MitwirkendeR];
Blinc, R
[MitwirkendeR];
Booyens, H
[MitwirkendeR];
Brehme, S
[MitwirkendeR];
Cabrera-Caño, J
[MitwirkendeR];
Castaing, J
[MitwirkendeR];
Chernyi, V
[MitwirkendeR];
Chudinov, V. G
[MitwirkendeR];
[...]
Physica status solidi
: Volume 85, Number 2: October 16
- [Reprint 2021]
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- Medientyp: E-Book
- Titel: Physica status solidi : Volume 85, Number 2: October 16
- Beteiligte: Görlich [HerausgeberIn]; Alameda, J. M [MitwirkendeR]; Alonso, J. A [MitwirkendeR]; Alyabiev, V. M [MitwirkendeR]; Aroba, A. K [MitwirkendeR]; Aronov, D. A [MitwirkendeR]; Atmani, H [MitwirkendeR]; Aubin, M [MitwirkendeR]; Azimov, S. A [MitwirkendeR]; Baker, I [MitwirkendeR]; Baltrunas, D [MitwirkendeR]; Barbulescu, A [MitwirkendeR]; Basson, J. H [MitwirkendeR]; Baum, B. A [MitwirkendeR]; Berthel, K.-H [MitwirkendeR]; Besirganyan, P. A [MitwirkendeR]; Blasek, G [MitwirkendeR]; Blazha, M. G [MitwirkendeR]; Blinc, R [MitwirkendeR]; Booyens, H [MitwirkendeR]; Brehme, S [MitwirkendeR]; Cabrera-Caño, J [MitwirkendeR]; Castaing, J [MitwirkendeR]; Chernyi, V [MitwirkendeR]; Chudinov, V. G [MitwirkendeR]; Contreras, M. C [MitwirkendeR]; Corbett, J. W [MitwirkendeR]; Couzi, M [MitwirkendeR]; Daluda, Yu. N [MitwirkendeR]; David, M [MitwirkendeR]; Denisenko, G. A [MitwirkendeR]; Dietsch, R [MitwirkendeR]; Dini, K [MitwirkendeR]; Domínguez-Rodríguez, A [MitwirkendeR]; Dunaev, A. F [MitwirkendeR]; Dunlap, R. A [MitwirkendeR]; El-Sharkawy, A. A [MitwirkendeR]; Emtsev, V. V [MitwirkendeR]; Esina, N. P [MitwirkendeR]; Esnouf, C [MitwirkendeR]; Fantozzi, G [MitwirkendeR]; Filaretova, G. M [MitwirkendeR]; Fukuda, Y [MitwirkendeR]; Gabrielyan, R. Ts [MitwirkendeR]; Gaworzewski, P [MitwirkendeR]; Gevers, R [MitwirkendeR]; Ghoniem, M. H [MitwirkendeR]; Ghosh, S [MitwirkendeR]; Glaefeke, H [MitwirkendeR]; Golinsky, H.-Chr [MitwirkendeR]; Gopal, E. S. R [MitwirkendeR]; Goshchitskh, B. N [MitwirkendeR]; Gronkowski, J [MitwirkendeR]; Gubskaya, V. I [MitwirkendeR]; Gushchin, V. S [MitwirkendeR]; Hargraves, P [MitwirkendeR]; Hashimoto, H [MitwirkendeR]; Hergert, W [MitwirkendeR]; Hermoneit, B [MitwirkendeR]; Herremans, W [MitwirkendeR]; Herrmann, R [MitwirkendeR]; Hess, H [MitwirkendeR]; Ikezaki, K [MitwirkendeR]; Ishii, T [MitwirkendeR]; Iwata, M [MitwirkendeR]; Jacobs, K [MitwirkendeR]; Jog, K. N [MitwirkendeR]; Kaciulis, S [MitwirkendeR]; Kaminskii, A. A [MitwirkendeR]; Karandashev, S. A [MitwirkendeR]; Khan, S [MitwirkendeR]; Kibickas, K [MitwirkendeR]; Klikorka, J [MitwirkendeR]; Kohmoto, O [MitwirkendeR]; Kohn, V. G [MitwirkendeR]; Koizumi, M [MitwirkendeR]; Kraak, W [MitwirkendeR]; Krasnaya, A. R [MitwirkendeR]; Krause, H [MitwirkendeR]; Krech, W [MitwirkendeR]; Kuchinskii, P. V [MitwirkendeR]; Köhler, H.-J [MitwirkendeR]; Lauzier, J [MitwirkendeR]; Lemke, H [MitwirkendeR]; Lindstrom, J. L [MitwirkendeR]; Lomako, V. M [MitwirkendeR]; Lomonov, V. A [MitwirkendeR]; Loyzance, P. L [MitwirkendeR]; Lugakov, P. F [MitwirkendeR]; Lukashevich, T. A [MitwirkendeR]; Lung, C. W [MitwirkendeR]; López, J. M [MitwirkendeR]; Malek, J [MitwirkendeR]; Malgrange, C [MitwirkendeR]; Maltsev, V. I [MitwirkendeR]; Marquez, R [MitwirkendeR]; Meyer, H.-G [MitwirkendeR]; Michon, P [MitwirkendeR]; Micocci, G [MitwirkendeR]; Minier, C [MitwirkendeR]; Miura, T [MitwirkendeR]; Moseev, N.V [MitwirkendeR]; Nebauer, E [MitwirkendeR]; Nespurek, S [MitwirkendeR]; Oehrlein, G. S [MitwirkendeR]; Ohkawa, T [MitwirkendeR]; Oster, L. N [MitwirkendeR]; Parseliunas, J [MitwirkendeR]; Parthasarathy, G [MitwirkendeR]; Pasemann, L [MitwirkendeR]; Pavlov, V. A [MitwirkendeR]; Pawelek, A [MitwirkendeR]; Perlin, Yu. E [MitwirkendeR]; Pickenhain, R [MitwirkendeR]; Pozhidaev, E. D [MitwirkendeR]; Protasov, V. I [MitwirkendeR]; Rashed, I. H [MitwirkendeR]; Rauschenbach, B [MitwirkendeR]; Reiche, P [MitwirkendeR]; Riedel, M [MitwirkendeR]; Rizzo, A [MitwirkendeR]; Rubinov, V. M [MitwirkendeR]; Rubio, H [MitwirkendeR]; Rudlof, G [MitwirkendeR]; Ryabchenkov, V. V [MitwirkendeR]; Saenko, V. S [MitwirkendeR]; Sandow, E [MitwirkendeR]; Sanyal, S. P [MitwirkendeR]; Sarkisov, S. E [MitwirkendeR]; Sasaki, A [MitwirkendeR]; Schaller, U [MitwirkendeR]; Schauer, F [MitwirkendeR]; Schell, M [MitwirkendeR]; Schmalz, K [MitwirkendeR]; Schneider, F [MitwirkendeR]; Schulson, E. M [MitwirkendeR]; Schultze, D [MitwirkendeR]; Seidel, P [MitwirkendeR]; Seifert, W [MitwirkendeR]; Sen, K [MitwirkendeR]; Shalaev, V. I [MitwirkendeR]; Shimada, M [MitwirkendeR]; Shuvalov, L. A [MitwirkendeR]; Sidorov, V. E [MitwirkendeR]; Sincan, Lucia [MitwirkendeR]; Singh, R. K [MitwirkendeR]; Sircar, P [MitwirkendeR]; Suezawa, M [MitwirkendeR]; Sumino, K [MitwirkendeR]; Svensson, B. G [MitwirkendeR]; Taguchi, H [MitwirkendeR]; Takeuchi, N [MitwirkendeR]; Tepore, A [MitwirkendeR]; Tichy, L [MitwirkendeR]; Tomita, A [MitwirkendeR]; Toneyan, A. H [MitwirkendeR]; Topic, B [MitwirkendeR]; Tuichiev, M [MitwirkendeR]; Tyagi, B. P [MitwirkendeR]; Tyutnev, A. P [MitwirkendeR]; Unterricker, S [MitwirkendeR]; Vannikov, A. V [MitwirkendeR]; Vautier, C [MitwirkendeR]; Vologin, V. G [MitwirkendeR]; Walz, F [MitwirkendeR]; Wesch, W [MitwirkendeR]; Yaskolko, V. Ya [MitwirkendeR]; Zaghloul, M. S [MitwirkendeR]; Zmeskal, O [MitwirkendeR]; Zotova, N. V [MitwirkendeR]
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Erschienen:
Berlin; Boston: De Gruyter, [2022]
[Online-Ausgabe] - Erschienen in: Physica status solidi ; Volume 85, Number 2 ; A
- Ausgabe: Reprint 2021
- Umfang: 1 Online-Ressource (460 p)
- Sprache: Deutsch
- DOI: 10.1515/9783112501382
- ISBN: 9783112501382
- Identifikator:
- Schlagwörter: SCIENCE / General
- Art der Reproduktion: [Online-Ausgabe]
- Entstehung:
-
Anmerkungen:
In German
Mode of access: Internet via World Wide Web
- Beschreibung: Frontmatter -- Classification Scheme -- Contents -- Review Article -- Effect of Dislocation Structure on Creep and Fracture of Metals and Alloys (II) -- Original Papers -- Structure -- On the Polarization Mixing of X-Rays. Quantum Theory of Interference of White X-Rays -- Six-Beam X-Ray Diffraction in Ge Single Crystals -- Group-to-Subgroup Relations in Space Groups. Application to the Structural Phase Transitions in the Perovskite-Type Layer Compounds RbAlF4 and RbVF4 -- Fast-Electron Diffraction near a Translation Interface on Edge. The Generalized Dispersion Relation -- Fraunhofer Diffraction of X-Ray Beams at Bragg Incidence in Distorted Crystals -- Crystallization Study of Evaporated a-Se Films by Means of DTA Technique -- Lattice properties -- 87Rb NMR in Monoclinic RbD2PO4 -- The Relative Stability and Phase Transition Studies of MgO and CaO Crystals -- The Atomic Size-Mismatch Contribution to the Enthalpy of Formation of Concentrated Substitutional Metallic Solid Solutions -- Study of Thermal Properties of Polycrystalline KCl, KBr, and KI in the Temperature Bange 300 to 600 K -- Defects, atomistic aspects -- Possible Amorphisation and Phase Separation of Intermetallic Mo3Si Compound under Radiation. Molecular Dynamics Study -- Formation and Parameters of Boron-Divacancy Complexes in Irradiated p-Si -- High-Temperature Creep of Equimolecular NiO-CoO Solid Solution -- On the Optimal Choice of Substrate for Hg0.8Cd0.2Te Epitaxial Layers -- Radiation Damage and Its Annealing Behaviour in InP after Recoil Implantation of 118Sb and 111In Observed by TDPAC -- Internal Friction at Low Temperature in High Purity Magnesium -- On the Annihilation of Thermal Donors in Silicon Crystals -- Modification of Concentration Profiles in Iron and Aluminium by High-Fluence Implantation of Nitrogen and Boron Ions -- On Intrinsic Stacking Faults in Polycrystalline Ni3Al -- Isochronal Annealing Study of Aggregation in Doped Alkali Halide Crystals -- Magnetism -- Magnetic Structure of y-Iron Containing Oxygen -- Transition-Induced Magnetic After-Effect in the Amorphous Alloy Fe20Ni56B24 at the Critical Temperature -- Magnetic Properties of Amorphous FexS1-xFilms (I) -- Magnetic Properties in the System (Sr1-xCax) CoO3-0 -- Neutron Diffraction Studies of the Magnetic Ground State in Li-Zn Ferrite -- Extended electronic states and transitions -- Amplitude Modulation and Demodulation of Electromagnetic Waves in Magnetised Semiconducting Plasmas -- Localized electronic states and transitions -- Luminescent Properties of Zinc Silicate Doped with Gallium -- Growth, Spectral and Luminescence Study of Cubic Bi4Ge3O12:Pr3+ Crystals -- Hopping Conduction in SiO2 Films Thermally Grown on Phosphorus-Doped Polycrystalline Silicon -- Electrical Properties of Thermal Donors Formed in CZ-Si during Heat Treatment at 450 °C -- The Effect of the Vacancy Charge State on the Radiation Defect Formation in Silicon -- Electric transport -- Temperature Dependence of Transient Radiation-Induced Conductivity in Polymers -- Grain Size and Temperature Dependence of the Electrical Behaviour of Polysilicon -- Photoconductivity in Halogenated and Hydrogenated Amorphous Silicon Films -- Thermal Influence of Vacuum Deposition of Metallic Electrodes on TSC from Positively Corona-Charged Polyethylene Films -- An Ohmic Contact Test Using the Activation Energy of Steady-State Space-Charge-Limited Current -- Device-related phenomena -- Green and Yellow Light Emitting Diodes Produced from Vapour Phase Epitaxial GaP:N (I) -- Theoretical Study of the Information Depth of the Cathodoluminescence Signal in Semiconductor Materials -- Pulsed UV Laser Processed Gold and Aluminum Ohmic Contacts on n+-GaAs -- Tunneling Surface Recombination in MS Structures on p-InAs -- Short Notes -- A Study of the Possibility of Restoration of Composition of SnTe Oxidized Epitaxial Layers by Means of NGR Spectroscopy -- Hydrogen Absorption and Crystallization in Amorphous Co90Zr10 -- Anisotropy of Microhardness in Anthracene Single Crystals -- On the Complex of the Oxygen Interstitial and the Silicon Interstitial in Silicon -- Interaction of a Dislocation with a Crack -- A Simple Model of Small Yield Point Due to Strain Rate Change Based on the Dynamics of the Source Generated Dislocation Group -- Exponential Absorption Edge in Ge20Sb15S65 Glass Depending on Sample Preparation -- Absorption Edge Shift in the Pb0-SiO2 System -- Eigenschaften der Energieniveaus von Kobalt in Silizium -- Eigenschaften der Energieniveaus von Rhodium und Iridium in Silizium -- Thermoluminescence and Thermally Stimulated Exoelectron Emission in Glass and Sintered CaB4O7: CuCl2 -- Exoelectron Emission from Calcium Sulfate Excited by Slow Electrons -- Remarks about a New, Constructive Method for the Analysis of Thermally Stimulated Relaxation Processes (TSRP) -- Electrical Resistivity of Amorphous Co-Rich FeCo-SiB Alloys -- On the Mechanism of Current Passage in Gallium Phosphide Films Excited by Light or a Beam of Accelerated Electrons -- Unusual Effect of Tellurium Doping on the Electrical Properties of Bulk Amorphous Selenium -- Ohmic AuGe Contacts on n-GaAs Produced by Nanosecond Laser Pulse Irradiation -- The Influence of Microwaves on the Current-Voltage Characteristic of Nb-NbOx-Pb Josephson Tunnel Junctions -- Dependence of I-U Characteristics of GaAs n+-n-n+ Diodes on the Active Region Length -- Sensitive Pressure Gauge on the Basis of Pure n-InSb -- Pre-Printed Titles -- Pre-Printed Titles of papers to be published in the next issues of physica status solidi (a) and physica status solidi (b) -- Classification Scheme — Continued -- Backmatter
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