> Detailanzeige
Abdel-Raaheim, A. E. E
[MitwirkendeR];
Abushov, S. A
[MitwirkendeR];
Aidaev, F. Sh
[MitwirkendeR];
Aleksasdrov, L. N
[MitwirkendeR];
Altshuler, E
[MitwirkendeR];
Andriesh, A. M
[MitwirkendeR];
Andrä, W
[MitwirkendeR];
Armigliato, A
[MitwirkendeR];
Aronov, D. A
[MitwirkendeR];
Asainov, O. Kh
[MitwirkendeR];
Ascheron, C
[MitwirkendeR];
Azimov, S. A
[MitwirkendeR];
Bagdoev, A. G
[MitwirkendeR];
Balyko, L. V
[MitwirkendeR];
Baranskii, P. I
[MitwirkendeR];
Barkalov, O.I
[MitwirkendeR];
Bashkirov, L. A
[MitwirkendeR];
Batisi, R. de
[MitwirkendeR];
Bauer, C
[MitwirkendeR];
Belash, I. T
[MitwirkendeR];
Bivol, V. V
[MitwirkendeR];
Blanchin, M. G
[MitwirkendeR];
Blythe, H. J
[MitwirkendeR];
Bondarenko, A. G
[MitwirkendeR];
[...]
Physica status solidi
: Volume 89, Number 2: June 16
- [Reprint 2021]
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- Medientyp: E-Book
- Titel: Physica status solidi : Volume 89, Number 2: June 16
- Beteiligte: Görlich [HerausgeberIn]; Abdel-Raaheim, A. E. E [MitwirkendeR]; Abushov, S. A [MitwirkendeR]; Aidaev, F. Sh [MitwirkendeR]; Aleksasdrov, L. N [MitwirkendeR]; Altshuler, E [MitwirkendeR]; Andriesh, A. M [MitwirkendeR]; Andrä, W [MitwirkendeR]; Armigliato, A [MitwirkendeR]; Aronov, D. A [MitwirkendeR]; Asainov, O. Kh [MitwirkendeR]; Ascheron, C [MitwirkendeR]; Azimov, S. A [MitwirkendeR]; Bagdoev, A. G [MitwirkendeR]; Balyko, L. V [MitwirkendeR]; Baranskii, P. I [MitwirkendeR]; Barkalov, O.I [MitwirkendeR]; Bashkirov, L. A [MitwirkendeR]; Batisi, R. de [MitwirkendeR]; Bauer, C [MitwirkendeR]; Belash, I. T [MitwirkendeR]; Bivol, V. V [MitwirkendeR]; Blanchin, M. G [MitwirkendeR]; Blythe, H. J [MitwirkendeR]; Bondarenko, A. G [MitwirkendeR]; Borisenko, T. E [MitwirkendeR]; Borodko, Yu. G [MitwirkendeR]; Bremser, W [MitwirkendeR]; Briskina, Ch. M [MitwirkendeR]; Brümmer, O [MitwirkendeR]; Budkevich, B. A [MitwirkendeR]; Bursill, L. A [MitwirkendeR]; Chen, G.-H [MitwirkendeR]; Chipenko, G. V [MitwirkendeR]; Csach, K [MitwirkendeR]; Danan, H [MitwirkendeR]; Degtyareva, V. F [MitwirkendeR]; Delaey, L [MitwirkendeR]; Delavignette, P [MitwirkendeR]; Deshmukh, B. T [MitwirkendeR]; Didenko, A. N [MitwirkendeR]; Dubecký, F [MitwirkendeR]; Duszak, M [MitwirkendeR]; Efremushkin, B. V [MitwirkendeR]; El-Dally, A. A [MitwirkendeR]; Enikolopian, N. S [MitwirkendeR]; Erzinkyan, A. L [MitwirkendeR]; Fischer, F [MitwirkendeR]; Földeaki, M [MitwirkendeR]; Garcia, S [MitwirkendeR]; Ges, I. A [MitwirkendeR]; Ghiya, B. H [MitwirkendeR]; Gilar, O [MitwirkendeR]; Gobin, P. F [MitwirkendeR]; Govoni, D [MitwirkendeR]; Gruschel, W [MitwirkendeR]; Guotong, Shi [MitwirkendeR]; Guénin, G [MitwirkendeR]; Hauck, G [MitwirkendeR]; Herrmann, K. H [MitwirkendeR]; Horák, J [MitwirkendeR]; Huafu, Wang [MitwirkendeR]; Igaki, K [MitwirkendeR]; Iovu, M. S [MitwirkendeR]; Ismailzade, I. H [MitwirkendeR]; Ivlev, G. D [MitwirkendeR]; Jakubowski, A [MitwirkendeR]; Jansa, L [MitwirkendeR]; Juška, G [MitwirkendeR]; Kaplunov, M. G [MitwirkendeR]; Karel, V [MitwirkendeR]; Khanchevskaya, E. G [MitwirkendeR]; Knigin, P. I [MitwirkendeR]; Komitov, L [MitwirkendeR]; Korshunov, F. P [MitwirkendeR]; Koshy, J [MitwirkendeR]; Krivobokov, V. P [MitwirkendeR]; Kumeda, M [MitwirkendeR]; Kuźmiński, S [MitwirkendeR]; Kühnert, R [MitwirkendeR]; Logachev, E. I [MitwirkendeR]; Lotti, R [MitwirkendeR]; Lošẗák, P [MitwirkendeR]; MacDonald, J. E [MitwirkendeR]; Mamatkulov, B. R [MitwirkendeR]; Marchenko, I. G [MitwirkendeR]; Markushev, V. M [MitwirkendeR]; Matoušek, P [MitwirkendeR]; Matyas, E. E [MitwirkendeR]; Merle, P [MitwirkendeR]; Merlin, J [MitwirkendeR]; Michel, B [MitwirkendeR]; Miyada-Naborikawa, L. T [MitwirkendeR]; Miškuf, J [MitwirkendeR]; Mochizuki, K [MitwirkendeR]; Morimoto, A [MitwirkendeR]; Moritz, Th [MitwirkendeR]; Murakami, Y [MitwirkendeR]; Murasik, A [MitwirkendeR]; Muraveva, V. V [MitwirkendeR]; Negrini, P [MitwirkendeR]; Neumann, H [MitwirkendeR]; Niftiev, G. M [MitwirkendeR]; Oberschmid, R [MitwirkendeR]; Olejníkovà, B [MitwirkendeR]; Omar, M. S [MitwirkendeR]; Onodera, H [MitwirkendeR]; Pamplin, B. R [MitwirkendeR]; Parfenova, V. P [MitwirkendeR]; Pavlov, V. M [MitwirkendeR]; Petr, I [MitwirkendeR]; Petrov, M [MitwirkendeR]; Pilipovich, V. A [MitwirkendeR]; Piotrowski, M [MitwirkendeR]; Pirogov, A. N [MitwirkendeR]; Pode, R. B [MitwirkendeR]; Pogrebnyak, A. D [MitwirkendeR]; Ponyatovskii, E. G [MitwirkendeR]; Prakash, J [MitwirkendeR]; Puchkareva, L. N [MitwirkendeR]; Pátek, K [MitwirkendeR]; Razykov, T. M [MitwirkendeR]; Reddy, P. J [MitwirkendeR]; Reddy, U. K [MitwirkendeR]; Remnev, G. E [MitwirkendeR]; Riede, V [MitwirkendeR]; Rietenbach, F [MitwirkendeR]; Romanov, I. M [MitwirkendeR]; Rosenberg, L. P [MitwirkendeR]; Ruzimov, Sh. M [MitwirkendeR]; Saile, B [MitwirkendeR]; Sakr, M. S [MitwirkendeR]; Samedov, O. A [MitwirkendeR]; Saunders, G. A [MitwirkendeR]; Savyak, V. V [MitwirkendeR]; Schober, W [MitwirkendeR]; Schäfer, P [MitwirkendeR]; Servidori, M [MitwirkendeR]; Shashkin, D. P [MitwirkendeR]; Shekoyan, A. V [MitwirkendeR]; Shimizu, T [MitwirkendeR]; Siffert, P [MitwirkendeR]; Simonenko, Yu. V [MitwirkendeR]; Simova, P [MitwirkendeR]; Slaoui, A [MitwirkendeR]; Smith, David J [MitwirkendeR]; Sobotta, H [MitwirkendeR]; Sodolski, H [MitwirkendeR]; Solmi, S [MitwirkendeR]; Szaynok, A. T [MitwirkendeR]; Tagiev, B. G [MitwirkendeR]; Takeuchi, N [MitwirkendeR]; Thurzo, I [MitwirkendeR]; Tomita, A [MitwirkendeR]; Tomáš, I [MitwirkendeR]; Troshchinskii, V. T [MitwirkendeR]; Troyanchuk, I. O [MitwirkendeR]; Turovtsev, V. V [MitwirkendeR]; Verlan, V. I [MitwirkendeR]; Vokhmyanin, A. P [MitwirkendeR]; Wagner, N [MitwirkendeR]; Walz, F [MitwirkendeR]; Wilkens, M [MitwirkendeR]; Yagubskii, E. B [MitwirkendeR]; Zalukovskaya, O. A [MitwirkendeR]; Zani, A [MitwirkendeR]; Zhongkang, Wu [MitwirkendeR]; Zhorin, V. A [MitwirkendeR]; Zhvavyi, S. P [MitwirkendeR]; Zolin, V. F [MitwirkendeR]; van Landuyt, J [MitwirkendeR]; van Tendeloo, G [MitwirkendeR]; Čermák, K [MitwirkendeR]; Ždánský, K [MitwirkendeR]
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Erschienen:
Berlin; Boston: De Gruyter, [2022]
[Online-Ausgabe] - Erschienen in: Physica status solidi ; Volume 89, Number 2 ; A
- Ausgabe: Reprint 2021
- Umfang: 1 Online-Ressource (432 p)
- Sprache: Englisch
- DOI: 10.1515/9783112497968
- ISBN: 9783112497968
- Identifikator:
- Schlagwörter: SCIENCE / General
- Art der Reproduktion: [Online-Ausgabe]
- Entstehung:
-
Anmerkungen:
In English
Mode of access: Internet via World Wide Web
- Beschreibung: Frontmatter -- Classification Scheme -- Contents -- Original Papers -- Structure -- Mössbauer Study of the Reaction Kinetics of Hexagonal M-Phase Ferrites -- Dynamics of Solid Solution Formation in Cu-Ni Mixture under Plastic Flow at High Pressure -- Simulation of the Influence of Mechanical Stresses on the Kinetics of Crystallization of Ion-Implanted Silicon Layers under Pulse Heating -- Intermediate Smectic A-State at Nematic-Smectic C Phase Transition at Tilted Orientation -- Strain Field Observation and Lattice Stability at the Tip of Thermoelastic Cu-Zn-Al Martensite Plates -- Focus Dependence of the Black-White Contrast of Small Point Defect Clusters on Transmission Electron Microscope Images of Crystalline Specimens -- Etude de validité d'un modèle de réseau de précipités sphériques pour la description de la remise en solution des précipités 0 dans les alliages Al-Cu -- Departures from Stoichiometry of BiTeI Crystals Grown from the Vapour Phase -- Lattice properties -- Focusing of Nonlinear Ultrasonic Waves in Viscous Thermoelastie Materials with Spherical Inclusions -- Optical Properties of the Two Crystal Modifications of the Organic Conductor (BEDT-TTF)2I3 -- Defects, atomistic aspects -- On the Dose Dependence of the Formation of Z1 Centres in KCl:Ca -- Transmission Electron Microscopy Observations of Dislocations and Twins in Polycrystalline Zirconium -- Effect of Chlorine Implantation on Phosphorus Predeposition in Silicon -- The Size Distribution of Macroscopic Defects in Media Containing Gas Admixture -- Investigations of Hydrogen Implanted GaP Single Crystals by Means of Particle Induced y-Spectroscopy, Infrared Spectroscopy, and Rutherford Backscattering Channelling Technique -- Extended Defects in Deformed Rutile -- Magnetism -- Exchange and Dipolar Interactions in TbF3 -- Magnetic After-Effects in Nitrogen-Charged α-Fe Following Low-Temperature Electron- and Neutron-Irradiation -- A Quantitative Characterization of Magnetic Defects by Domain Nucleation -- Magnetic Ordering in the System Ca(Cu1-x Mnx)3Mn4O12 -- Localized electronic states and transitions -- Thermally Stimulated Exoelectron Emission and Spectra of Thermoluminescence in NaCl:Ca, Cu and NaCl:Cu Single Crystals -- Determination of the Electron Effective Mass and Relaxation Time in Heavily Doped Silicon -- Shallow Energy States in CdTe -- Analysis of Non-Exponential Filling in DLTS on p-n Junctions. Application to Dominant Traps in AlGaAs Lasers -- Electric transport -- Injection and Thermodepolarization Currents in GaS:Er Single Crystals -- Ionic Conduction in Rhodamine-Doped Polyester Polymer -- Minority Carrier Lifetimes in PbS0.1Se 0.9Determined from Diffusion Length by a Scanning Laser Microprobe -- Conductivity Instabilities and Polarization Effects of Bi12 (Ge, Si)O20 Single-Crystal Samples -- Photoconductivity of CdSxSe1-x with Controlled Deviation from Stoichiometry -- I - U Characteristics of Non-Crystalline As-Se-Cd Thin Films -- The Enhancement of Exclusion Effect in Compensated Semiconductors under the Action of Impurity Illumination Generating Minority Current Carriers -- Device-related phenomena -- On the Role of the Back Contact in DLTS Experiments with Schottky Diodes -- Influence of Humidity on Electrical Properties of a MOS Structure with an Ultrathin Dielectric Film -- Irradiation of MOS Transistors and Resulting Transport Processes in SiO2 -- Laser Annealing Effects on Electrochromic Properties of Amorphous Evaporated WO3 Films -- Short Notes -- Structure -- Preparation of Pb(Te, Se) Films by Simultaneous Evaporation of PbTe and Se -- XPS Studies of RuO2 Covered Titanium Oxides -- F.C.C. Solid Solutions in Al-Ge and Al-Si Alloys under High Pressure -- The Nature of the Intermediate Phase of PbZrO3 -- Lattice properties -- Comparison of the Elastic Behaviour of CuGe4P3 with that of CuGe2P3 -- Defects, atomistic aspects -- The Temperature Dependence of the Effective Threshold Energy for Atom Displacement in Tantalum -- Nitrogen Concentration in GaP:N Epitaxial Layers from Localized Mode Absorption Measurements -- Angular Distribution of Emitted X-Rays from an Ion-Implanted Layer -- Effect of Structure Transformation on the Transient Creep Characteristics of Zn-40 wt% A1 and Zn-0.5 wt% A1 Alloys -- Moiré Techniques by Means of Scanning Electron Microscopy -- Positron Annihilation at Defects in Surface Layers of Steel Irradiated by Supercurrent Ion Beams -- Magnetism -- Remanent Magnetization and Wall Coercivity of Continuous Films with Perpendicular Anisotropy -- Extended electronic states and transitions -- Optical Properties of Films of the PbTe-SnS System -- Localized electronic states and transitions -- ESR Studies on Doped Hydrogenated Amorphous Silicon-Carbon -- Influence of Hot Annealing and Cooling Rate on the Hall Effect and Piezoresistance in Transmutationally Doped and Ordinary Silicon Crystals -- Photo- and Electroluminescence of Neodymium in GaS -- A Method of Determination of the Trap Depth of Deep Centres by Capacitance Measurements -- Magnetic Hyperfine Interaction of 92mNb in ZrFe2 -- Electric transport -- Drift Mobility of Electrons in TlSbS2 -- Photovoltaic Effect in LiNbO3:Mg -- Thermally Stimulated Depolarization of TINO2 near the Glass Transformation -- Measurements of the Rectifying Barrier Height of Sputter Deposited Bi2Te3 Contacts on p-Silicon -- Device-related phenomena -- Energy Band Model of Ultrathin Solar Cells with Thickness up to 5 um -- Variation of Switching Time of Silicon p-n-p-n Structures Irradiated by Fast Electrons -- Influence of Electrode Material on the Electrical and Photoelectrical Properties of p-InP/AS2Se3 Heterostructures -- Pre-Printed Titles
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