Physica status solidi: Volume 87, Number 2: February 16

Medientyp: E-Book

Titel: Physica status solidi : Volume 87, Number 2: February 16

Erschienen: Berlin; Boston: De Gruyter, [2022]
[Online-Ausgabe]

Ausgabe: Reprint 2021

Umfang: 1 Online-Ressource (476 p)

Sprache: Englisch

DOI: 10.1515/9783112497586

ISBN: 9783112497586

Identifikator:

Schlagwörter: SCIENCE / General

Art der Reproduktion: [Online-Ausgabe]

Entstehung:

Anmerkungen: In English
Mode of access: Internet via World Wide Web

Beschreibung: Frontmatter -- Contents -- Original Papers -- Structure -- On the Ordering Mechanism of Ni2Mo -- An X-Ray Wave Theory for Heavily Distorted Crystals -- Ruby Structure Peculiarities Derived from X-Ray Diffraction Data -- Properties and Structure of Silicon Oxynitride Films Obtained in a Hydrazine Plasma -- Void Swelling of Ferritic Steel during 1 MeV Electron Irradiation -- Measurements of the Backscattering of 20 to 60 keV Electrons from Double Layers at Various Angles of Incidence -- Determination of Long-Range Order Parameter in Alloys by Means of Electron Diffraction in the Electron Microscope -- Local Tetragonality and Atomic Structure in Nb3Sn Superconductor Studied by High Resolution Electron Microscopy -- On the Influence of Crystal Orientation on the High Resolution Image Contrast of Polytypes -- A New Method for the Interpretation of Energy Distributions Measured on Secondary Ions -- Contrast Investigations of Surface Acoustic Waves by Stroboscopic Topography -- Observation of Domain Structure in a (111) Oriented Grain oi Fe (Si) by X-Ray White Beam Topography -- Twinning of the Hexagonal (A) Structure of Rare Earth Sesquioxides -- A New Method for Measuring the Mixed Splay-Bend Elasticity and the Anchoring Strength in a Nematic Film -- Lattice properties -- Thermal Conductivity and Specific Heat of an Epoxy Resin/Epoxy Resin Composite Material at Low Temperatures -- Defects, atomistic aspects -- Strength, Plasticity, and Fracture of Ribbons of Fe5Co70Si15B10 Amorphous Alloy -- Effect of Normal Stresses on Yield Stress of Molybdenum Single Crystals at Slip on the Plane (211) -- Analysis of Kic and Its Temperature Dependence of Metals by a Simplified Dislocation Model -- The Superposition of Thermal Activation in Dislocation Movement -- Diffuse X-Ray Scattering from Neutron-Irradiated Silicon Doped with Boron -- Investigation of Lattice Strain in Proton-Irradiated GaP by a Modified Auleytner Technique -- The Integrated Intensities of the Laue-Diffracted X-Rays for Monocrystals Containing Macroscopically Homogeneously Distributed Defects -- Magnetism -- Changes of the Magnetic Properties of the Nearly Non-Magnetostrictive Amorphous Alloy CossFesNiioSinBie by Annealing under Tensile Stress -- Magnetic and Dielectric Eelaxations of Fe3O4 and Some Ferrites -- Localized electronic states and transitions -- Optically Induced Photomemory by 1 to 1.35 eV Photons in the Near-Intrinsic Spectral Eegion on Semiinsulating Bulk GaAs -- Hole-Induced Exoelectron Emission and Luminescence of Corundum Doped with Mg -- The Influence of Coulomb Screening and of NNi-Pairs on the Recombination of Bound Excitons in GraAs 1-X Px Mixed Crystals -- On the Dominant Recombination Level of Platinum in Silicon -- Electric transport -- The Effect of Annealing and Hydrogenation on the Dislocation Conduction in Silicon -- The Criteria of Diffusionless Solution Validity in the Theory of Exclusion in "Super-Pure" Semiconductors -- On the Determination of the Carrier Concentration in Large-Grain Polycrystalline InP, GaAs, and GaP by Hall Effect Measurements -- Analysis of Gralvanomagnetic Parameters in Semi-Insulating GaAs with Respect to the Three-Band Model -- Device-related phenomena -- Study of Degradation of Diode Structures by the Use of Probes -- The MISS Device -- A Regeneration Model for Conducting Filaments in MIM Diodes -- Current-Voltage Characteristics of Diodes with and without Light -- Comparing Furnace to Laser Annealing in Ion Implanted Surface Passivated MINP Solar Cells -- Erratum -- Fraunhofer Diffraction of X - Bay Beams at Bragg Incidence in Distorted Crystals -- Short Notes -- The Determination of the Distribution Function of Activation Energies of Structural Changes in Amorphous Se -- Theoretical Evidence for Opposite Moving Phase Fronts during Ultrafast Solidification Processes -- Structure and Chemical Composition of RF-Sputtered Boron Nitride Films -- Phase Diagram of the ZnP2-ZnAs2 System -- Spatial Distribution of the Components in the Au/GaAs System after Scanning Laser Annealing -- Calculation of the Ga-Al-Sb Phase Diagram Using the Redlich-Kister Expression -- The Interaction between Moving Domain Walls in Rochelle Salt Crystals -- The Effect of Non-Stoichiometry on Thermal Vibrations in TiCx -- The Effect of Doping on the Motion of Partial Dislocations in Silicon -- Effect of Carbon on the Minority Carrier Lifetime in Heat-Treated Oxygen-Containing Silicon -- Change of Magnetic Resonance Parameters in FeBOgiNiO Induced by Radiation ( λ = 1.06 μm) -- Reorientation of Domain Walls in a Garnet Film under the Action of an AC Magnetic Field -- Difference between Domain Wall Motion in Single Ciystal and Polycrystalline YIG Observed by Pulsed NMR -- Photo-Induced Thermoluminescence of X-Irradiated α-Al2O3 -- Time Resolved Spectra in CuGaS2 -- Flash-Lamp Annealing of Si-SiO2 Transition Layer Defects -- The Influence of the Phase Transformation on the Luminescence oi NbPO5 -- Dielectric Properties of Tourmaline -- Thermopower in Amorphous Fe 1-x Six Films -- Change in the Hall Coefficient with Magnetic Field in Silicon, Irradiated by Neutrons -- The Physical and Geometrical Magnetoresistance of n-Si Irradiated by Neutrons -- On the Properties of Amorphous Silicon Films and Amorphous Si-Crystalline Si Heterojunction -- Saturation and Oscillation of Current in Semiconductors Subjected to Uniaxial Deformation -- Metal-(Tunnel) Insulator-Semiconductor Switch (MISS) with Negative Resistances both in Forward and Reverse Directions -- Pre-Printed Titles

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