Physica status solidi: Volume 69, Number 2: February 16

Medientyp: E-Book

Titel: Physica status solidi : Volume 69, Number 2: February 16

Erschienen: Berlin; Boston: De Gruyter, [2022]
[Online-Ausgabe]

Ausgabe: Reprint 2021

Umfang: 1 Online-Ressource (480 p)

Sprache: Deutsch

DOI: 10.1515/9783112496268

ISBN: 9783112496268

Identifikator:

Schlagwörter: SCIENCE / General

Art der Reproduktion: [Online-Ausgabe]

Entstehung:

Anmerkungen: In German
Mode of access: Internet via World Wide Web

Beschreibung: Frontmatter -- Classification Scheme -- Physica status solidi (a) applied research -- Contents -- Original Papers -- Magnetic Clusters in Some Barium Lanthanide Cobaltates -- Enthalpy Effects in Amorphous Alloys and Intermetallic Compounds in the System Zr-Cu -- The 77 Se High Resolution NMR in Antiferroelectric Single Crystals of Cesium Trihydrogenselenite -- Temperature Dependence of the Absorption Edge of Cd 1-x Mn x Te Mixed Crystals -- X-Ray Plane Wave Dynamic Reflection at a Laminar Crystalline Medium in the Bragg Case -- Investigation of Dynamic Diffraction Focusing of X-Rays by a Homogeneously Bent Crystal in the Symmetric Laue Case -- The Influence of Intrinsic Defects on the Electrical Properties of Single Crystals of CdSiP2 and ZnGeP2 -- Effect of Hydrostatic Pressure on Dislocation Mobility in KC1 Crystals -- Electron Microscopy Images of Composition-Modulated Crystals (II) -- Electroabsorption and Non-Equilibrium Carrier Recombination in CdGa2S4 Single Crystals -- Interaction of Copper Atoms with Radiation Defects in Gallium Arsenide -- Effect of the Polycrystalline Structure on the Relaxation Processes and Dislocation Motion in NaCl Crystals -- High Ionic Conductivity of Ag 19 I 15 P 2 O 7 Solid Electrolyte -- A New Method for the Determination of the Metal-Insulator (Semiconductor) Work Function by Photoelectric Measurements -- AuAl 2 : Optical Properties and Consideration as a Transparent Electrode Material -- Studies of Surface Recombination Processes in Photo-Excited VPE-GaP:N,Te -- Low-Temperature Magnetic Relaxation in a Dilute Iron—Silicon Alloy after Electron Irradiation at 44 K -- Void Swelling Studies of Stainless Steel Containing Silicon and Titanium -- Electron Diffraction and Electron Microscopic Study of the Alloy Au2Mn and Its Formation Mechanism -- Investigations of Radiation Damage Production in Ion Implanted Silicon -- Dislocation Relaxation Peaks in High-Purity Molybdenum Single Crystals -- Surface Damage from Diamond-Saw Cutting of High Purity Mo Studied by Positrons -- K . PETERSEN -- Photoinjection of Charge Carriers in Poly-1-Viny1-1,2,4-Triazole -- The Effect of y-Irradiation on Photoelectrical Properties of Sb-GaSe Structures -- Role of Tin Centres on the Thermoluminescence of KCl:SnCl2 Single Crystals -- Description of Particle Growth by Means of a Difference Approximation -- Theoretical Model for Radiation Enhanced Diffusion and Redistribution of Impurities -- On the EBIC Contrast of Dislocations in Si -- Explanation of Contrast Effects in Synchrotron X-Ray Topographs of Bent Crystals by Means of Multiple Diffraction -- Study of Electronic Localized States Responsible of the Polarization of FeF3 Thin Films -- Double Injection at p-n Junctions Based on Al x Ga 1-x As -- Thermopower-Composition Dependence in Iron-Chromium, Iron-Zinc, and Iron-Cobalt Ferrites -- Influence of Disorder on Phonon Resistivity of Ion-Implanted Nickel Hydride -- Middle Infrared Study of the Cis Trans Isomerisation of (CH)x Induced by Oxidation -- Interpretation of Mössbauer Spectra of ß-FeB and Its Low Temperature Modification, a-FeB -- Diffusional Transformations: A Theory for the Formation of Superledges -- Effet Shubnikov-de-Haas dans les couches épitaxiées HgCdTe de type EDRI -- Transverse Susceptibility and Structure Constant in Cobalt Thin Films -- Compensation Effect in the Electrical Conduction Process in a Series of Naphthyl Polyenes -- Dielectric Properties of NaCl and KCl Single Crystals X-Irradiated under Different DC Fields -- Lattice Imaging oi Silicide-Silicon Interfaces and the Interpretation of Interfacial Defects -- Short Notes -- Ordre à courte distance et précipitation cohérente dans la phase a d'un cupro-aluminium -- Antiannealing Effects in Ion-Implanted and Electron Pulse Irradiated Quartz Crystals -- Positron Annihilation in Sr 2+ and Ba 2+ Doped KCl -- Isothermal Compression of Al to 10 GPa at 673 K -- On the Generation of Paramagnetic Defects by the Abrahams-Buiocchi Etchant on Semiinsulating GaAs -- Magnetic Porperties of RE5Ga3 Compounds (RE = Pr, Nd, Gd, Tb, Dy, Ho, Er, Tm, and Y) -- Influence of a Constant Electric Field on the Heat-Conductivity Coefficient of TGS near the Phase Transition Temperature -- Transit-Time Device Design Using Instability Criteria -- Emission Study of Surface States in Ferroelectrics -- Secondary Acoustoelectric Current in Ultrathin Metal Films Deposited on a Piezoelectric Substrate -- Synthesis of Solid Solution at Electron Pulse Processing of Ge-Si Structures -- Superconducting Properties of the PbM6S8 Conductor Produced by Solid State Reaction -- Optical Absorption of Thin Zinc Films -- EBIC Contrast of Surface-Parallel Dislocations in a Planar Semiconductor Diode with Large Surface Recombination -- Phase Transition in MTPP(TCNQ)2 Single Crystals by Infrared Reflection Measurements -- Thermal Filling Effects on Constant Capacitance Transient Spectroscopy -- Chain Annihilation of Defects in Semiconductor Crystals -- The Y Transferred Hyperfine Fields in Y2(Co 1-x Mn x ) 17 Compounds -- On the Luminescence Behaviour of Yttria Doped Thoria -- On the Mechanism of Anodic Oxidation of InSb -- Photoadmittance of an Inhomogeneous Semiconductor -- Heat Capacity Anomalies in the Intermetallic Compound V2Z r -- Pre-Printed Titles -- Pre-Printed Titles of papers to be published in the next issues of physica status solidi (a) and physica status solidi (b) -- Classification Scheme — Continued -- Backmatter

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