> Detailanzeige
Abbe, J. Ch
[MitwirkendeR];
Akhtar, S. M. Javed
[MitwirkendeR];
Aleksandkov, L. N
[MitwirkendeR];
Ali, A. R
[MitwirkendeR];
Aliev, R . A
[MitwirkendeR];
Allais, G
[MitwirkendeR];
Amelinckx, S
[MitwirkendeR];
Andreev, A. V
[MitwirkendeR];
Antonini, M
[MitwirkendeR];
Arama, E. D
[MitwirkendeR];
Armigliato, A
[MitwirkendeR];
Aronov, D. A
[MitwirkendeR];
Asadov, S. K
[MitwirkendeR];
Bachilo, I. A
[MitwirkendeR];
Badescu, A
[MitwirkendeR];
Bagiev, V. E
[MitwirkendeR];
Balandin, V. Yu
[MitwirkendeR];
Banerjee, J. P
[MitwirkendeR];
Bashkirov, L. A
[MitwirkendeR];
Baumbach, G. T
[MitwirkendeR];
Benes, L
[MitwirkendeR];
Bezirganyan, A. P
[MitwirkendeR];
Biedrzycki, K
[MitwirkendeR];
Blumtritt, H
[MitwirkendeR];
[...]
Physica status solidi
: Volume 109, Number 1: September 16
- [Reprint 2021]
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- Medientyp: E-Book
- Titel: Physica status solidi : Volume 109, Number 1: September 16
- Beteiligte: Görlich [HerausgeberIn]; Abbe, J. Ch [MitwirkendeR]; Akhtar, S. M. Javed [MitwirkendeR]; Aleksandkov, L. N [MitwirkendeR]; Ali, A. R [MitwirkendeR]; Aliev, R . A [MitwirkendeR]; Allais, G [MitwirkendeR]; Amelinckx, S [MitwirkendeR]; Andreev, A. V [MitwirkendeR]; Antonini, M [MitwirkendeR]; Arama, E. D [MitwirkendeR]; Armigliato, A [MitwirkendeR]; Aronov, D. A [MitwirkendeR]; Asadov, S. K [MitwirkendeR]; Bachilo, I. A [MitwirkendeR]; Badescu, A [MitwirkendeR]; Bagiev, V. E [MitwirkendeR]; Balandin, V. Yu [MitwirkendeR]; Banerjee, J. P [MitwirkendeR]; Bashkirov, L. A [MitwirkendeR]; Baumbach, G. T [MitwirkendeR]; Benes, L [MitwirkendeR]; Bezirganyan, A. P [MitwirkendeR]; Biedrzycki, K [MitwirkendeR]; Blumtritt, H [MitwirkendeR]; Bordovskii, G. A [MitwirkendeR]; Bourret, A [MitwirkendeR]; Celustka, B [MitwirkendeR]; Chen, Guanghua [MitwirkendeR]; Chen, Guowei [MitwirkendeR]; Coene, W [MitwirkendeR]; Condat, M [MitwirkendeR]; Decamps, B [MitwirkendeR]; Desnica, D [MitwirkendeR]; Diaz, M. V. Perez [MitwirkendeR]; Duplatre, G [MitwirkendeR]; Dvurechenskii, A. B [MitwirkendeR]; Efendiev, Sh. M [MitwirkendeR]; Endeklein, R [MitwirkendeR]; Etlinger, B [MitwirkendeR]; Evseev, B. S [MitwirkendeR]; Fahim, M. A [MitwirkendeR]; Florescu, V [MitwirkendeR]; Frabboni, S [MitwirkendeR]; Francois, P [MitwirkendeR]; Fu, Yao-Xian [MitwirkendeR]; Fuhs, W [MitwirkendeR]; Galligan, J. M [MitwirkendeR]; Geiesche, J [MitwirkendeR]; Gomory, F [MitwirkendeR]; Gosmanova, G [MitwirkendeR]; Guoba, L [MitwirkendeR]; Haasen, P [MitwirkendeR]; Hartwig, J [MitwirkendeR]; He, Yizhen [MitwirkendeR]; Hergert, W [MitwirkendeR]; Hesse, D [MitwirkendeR]; Heydenreich, J [MitwirkendeR]; Hiratsuka, K [MitwirkendeR]; Horak, J [MitwirkendeR]; Jianu, A [MitwirkendeR]; Kabulov, R [MitwirkendeR]; Kachurin, G. A [MitwirkendeR]; Khramtsov, V. A [MitwirkendeR]; Kikuchi, Y [MitwirkendeR]; Kirscht, F.-G [MitwirkendeR]; Kiryushin, I. V [MitwirkendeR]; Koch, F [MitwirkendeR]; Koleshko, V. M [MitwirkendeR]; Komarov, F. F [MitwirkendeR]; Konwicki, M [MitwirkendeR]; Krajewski, T [MitwirkendeR]; Kranjcec, M [MitwirkendeR]; Kraus, I [MitwirkendeR]; Kraus, L [MitwirkendeR]; Kulyasova, O. A [MitwirkendeR]; Kumar, V [MitwirkendeR]; Kuzmin, O. S [MitwirkendeR]; Landuyt, J. Van [MitwirkendeR]; Lao, Wanming [MitwirkendeR]; Lefebvre, A [MitwirkendeR]; Lerche, V [MitwirkendeR]; Levalois, M [MitwirkendeR]; Li, Chaorui [MitwirkendeR]; Li, Wu [MitwirkendeR]; Li, Zhongrong [MitwirkendeR]; Li, Zongquan [MitwirkendeR]; Ligachev, A. E [MitwirkendeR]; Ligenza, S [MitwirkendeR]; Lin, Xianduan [MitwirkendeR]; Lobotka, P [MitwirkendeR]; Lomasov, V. N [MitwirkendeR]; Malhotra, G. L [MitwirkendeR]; Manaila, R [MitwirkendeR]; Mao, Ming [MitwirkendeR]; Mattheis, R [MitwirkendeR]; Minge, J [MitwirkendeR]; Murthy, V. R. K [MitwirkendeR]; Mustafaev, E. R [MitwirkendeR]; Nebauer, E [MitwirkendeR]; Neuhäuser, H [MitwirkendeR]; Novikov, A. P [MitwirkendeR]; Oelgabt, G [MitwirkendeR]; Olfe, J [MitwirkendeR]; Olko, M [MitwirkendeR]; Padam, G. K [MitwirkendeR]; Pandian, V [MitwirkendeR]; Panin, G. N [MitwirkendeR]; Parisini, A [MitwirkendeR]; Pati, S. P [MitwirkendeR]; Petrov, S. A [MitwirkendeR]; Petrovic, B [MitwirkendeR]; Pietsch, U [MitwirkendeR]; Pilkevich, Ya. Ya [MitwirkendeR]; Potemkin, G. V [MitwirkendeR]; Pranevicius, L [MitwirkendeR]; Prokopenko, V. K [MitwirkendeR]; Prudenziati, M [MitwirkendeR]; Puhlmann, N [MitwirkendeR]; Pöppl, A [MitwirkendeR]; Radautsan, S. I [MitwirkendeR]; Raman, R [MitwirkendeR]; Rao, S. U. M [MitwirkendeR]; Rhan, H [MitwirkendeR]; Ristau, D [MitwirkendeR]; Roy, S. K [MitwirkendeR]; Sacchi, M [MitwirkendeR]; Sandow, B [MitwirkendeR]; Sargunas, V [MitwirkendeR]; Savinova, N. A [MitwirkendeR]; Schikora, D [MitwirkendeR]; Schmalz, K [MitwirkendeR]; Seregina, L. N [MitwirkendeR]; Shemyakov, A. A [MitwirkendeR]; Shen, Hui [MitwirkendeR]; Stary, Z [MitwirkendeR]; Strusnv, H [MitwirkendeR]; Tendeloo, G. Van [MitwirkendeR]; Tiginyanu, I . M [MitwirkendeR]; Tittelbach-Helmeich, K [MitwirkendeR]; Todris, B. M [MitwirkendeR]; Troyanchuk, I . O [MitwirkendeR]; Turkovic, A [MitwirkendeR]; Tyshchenko, I. E [MitwirkendeR]; Urli, N. B [MitwirkendeR]; Vanderschaeve, G [MitwirkendeR]; Verwerft, M [MitwirkendeR]; Vlasenko, L. S [MitwirkendeR]; Vlasenko, M. P [MitwirkendeR]; Voigtsbeeger, B [MitwirkendeR]; Völkel, G [MitwirkendeR]; Wang, Hong [MitwirkendeR]; Wang, Xiao-Gan [MitwirkendeR]; Wang, Yuansheng [MitwirkendeR]; Watanabe, K [MitwirkendeR]; Weise, Ch [MitwirkendeR]; Wieczorek, H [MitwirkendeR]; Wieser, E [MitwirkendeR]; Xu, Yuhuan [MitwirkendeR]; Yakimov, E. B [MitwirkendeR]; Yamaguchi, H [MitwirkendeR]; Yanovskii, V. P [MitwirkendeR]; Yu, Gong [MitwirkendeR]; Yuabov, Yu. M [MitwirkendeR]; Yue, Lanping [MitwirkendeR]; Zagorski, A [MitwirkendeR]; Zavadskii, E. A [MitwirkendeR]; Zavorotnev, Yu. D [MitwirkendeR]; Zeleny, M [MitwirkendeR]; Zhang, Fangqing [MitwirkendeR]; Zhang, Hong [MitwirkendeR]; Zhang, Yafei [MitwirkendeR]; Zhitar, V. F [MitwirkendeR]; Zounova, F [MitwirkendeR]; Zubauskas, G [MitwirkendeR]
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Erschienen:
Berlin; Boston: De Gruyter, [2022]
[Online-Ausgabe] - Erschienen in: Physica status solidi ; Volume 109, Number 1 ; A
- Ausgabe: Reprint 2021
- Umfang: 1 Online-Ressource (474 p)
- Sprache: Englisch
- DOI: 10.1515/9783112495643
- ISBN: 9783112495643
- Identifikator:
- Schlagwörter: SCIENCE / General
- Art der Reproduktion: [Online-Ausgabe]
- Entstehung:
-
Anmerkungen:
In English
Mode of access: Internet via World Wide Web
- Beschreibung: Frontmatter -- Author Index -- Physica status solidi (a) applied research -- Contents -- Review Article -- Orientation and Strain in Heteroepitaxial Growth -- Original Papers and Short Notes -- Structure; crystallography -- Crystallization of Metallic Glass Fe 46 N 31 VSi 8 B 14 -- Contrast of Small SiX Particles in Silicon by Computed HREM Images -- Icosahedral Phases in the Al-Fe-Cr Alloy System -- Trial Model for the Tilting Scheme in AgNbO3 Derived by Electron Diffraction and Imaging -- Anisotropie Deformation of a Crystal Plate and Its Analysis with X-Ray Diffraction Methods -- Interaction of Anti-Site Defects with Ge Impurity Atoms in Sb2Te3 Single Crystals -- X-Ray Reflection from and Transmission through a Plane-Parallel Dielectric Plate with Cosine-Like Polarizability (Symmetrical Laue Case) -- Etude structurale, par diffraction de R-X, des liaisons dans les semiconducteurs ternaires ZnSiAs2, ZnGeAs2 et ZnSnAs 2 -- A New Approach for n-beam Lattice Image Calculation -- Defects; nonelectronic transport -- Accumulation and Transformation of Radiation Defects in Silicon under Different Doses and Intensities of Electron Irradiation -- Study of the Movement of Oxygen Vacancies in the Orthorhombic Phase of YBa2Cu3O 7-x by Positron Doppler Broadening Spectroscopy -- Redistribution of Boron in Silicon by High-Temperature Irradiation with Heavy Ions -- Dislocation Groups, Multipoles, and Friction Stresses in a-CuZn Alloys -- Lattice properties -- Deformation Mechanism Maps and Gettering Diagrams for Single-Crystal Silicon -- TEM Study of Phases and Domains in NaNbO3 at Room Temperature -- Low Temperature Plasticity of Brittle Materials -- EPR Study of SO 4 Radicals in K4LiH3(SO4)4 Crystals -- X-Ray Analysis of Residual Stress State with Variable Components of Stress Tensor -- Surfaces, interfaces, thin films; lower-dimensional systems -- The Complex AC Susceptibility of Superconducting Y-Bar-CuO Thin Film and Bulk Samples -- The Current Characteristics of p-i-n and p+-i-p+ Structures Based on Hydrogenated Amorphous Silicon at Various Temperatures and Excitation Levels -- A Reinvestigation of Ni2Si Thin Film Growth on Si(lll) by TEM and RBS -- Structural Analysis of Silicon Doped with High Doses of C+ Ions -- Protective Coatings on GaAs and InP -- Transient Photocurrents in a-Si:H Diodes: Effects of Deep Trapping -- Mechanism of Voltage Generation in Bi Films Due to Laser Irradiation -- Determination of Semiconductor Parameters by Electron Beam Induced Current and Cathodoluminescence Measurements -- Localized electronic states -- Silver Related Deep Levels in Silicon -- DLTS Study of Deep Level Defects in Cz n-Si Due to Heat Treatment at 600 to 900 °C -- Investigation of the Oxygen Vacancy Balance in ZnO Ceramics by Means of EPR -- Electronic transport; superconductivity -- The Internal Strain Effect on T0 in the Y-Ba-Al-Cu Oxide Superconductor -- Magnetic properties; resonances -- Low-Temperature Magnetic Transformations in Ferrous Fluorsilicate Induced by Pressure -- On the Influence of Internal Stress and Magnetizing Frequency on Domain Wall Motion in High-Purity Ni -- Cluster Structure of the Li-Ti-Zn Ferrite System Studied by Neutron Scattering -- Dielectric and optical properties -- The Indirect Allowed Optical Transitions in (Ga 0.3 In 0.7)2 Se 3 -- Positron Annihilation Studies in Non-Metallic Solids: d-Camphor and Silver Iodide -- Nonlinear I-U Characteristics and Photoelectret State in Sillenite-Type Crystals -- Computer Simulation Experiment on the mm-Wave Properties of Indium Phosphide Double Drift Impatts -- Short Notes -- A Special Metastable Phase of Metallic Glass Pd 77.5 Ni 6 Si 16.5 -- SEM-EBIC Investigations of Grain Boundaries in Cadmium Telluride -- Detection of the Active Layer of A III B V Semiconductor Quantum-Well Structures by High Resolution X-Ray Diffractometry -- Structure and Properties of Implanted Steels -- A/2 < 110> Dislocations at the y/y' Interface in a Ni-Based Superalloy -- Two Trapping Centers in the Photoplastic Effect in CdS -- Ru-Metal Segregation in Borosilicate Glasses -- Melting of Multilayered Structures under Pulse Heating (Computational Experiment) -- Non-Equilibrium Gradient-Zone Crystallization in Semiconductors -- Contact Resistance Reduction by Implanted n+ -Layers at the Ni/AuGe- GaAs System -- IR and ESR Studies of the Structural Properties of Hydrogenated Amorphous Carbon Films -- Electron Microscopy and Optical Studies of Chemically Deposited CuInS2 Thin Films -- Electrical Activity Peculiarities of Tin and Iron Impurities in the Semiconducting Glass Ge 28.5 Pb 15S 56.5 -- Photoconductivity and Luminescence Spectra of ZnIn2S4 Crystals Irradiated by y-Quanta -- NMR-Spectroscopy Study of Ca(Cu 30-x Mn x )Mn 4 O 12 Perovskites -- Magnetization in Films with Modulated Surfaces -- Magnetic Properties of UCuGe -- On the Stress Dependence of the Saturation Magnetostriction in Amorphous Alloys -- Effect of Thickness and Length of the Sample on the Dielectric Constant (e') and Loss (e") Measurements in the Microwave Cavity Perturbation Technique -- Thermally Stimulated Electron Emission from Triglycine Sulphate Crystals Excited by AC Electric Field -- Pre-Printed Titles -- Pre-Printed Titles of papers to be published in the next issues of physica status solidi (a) and physica status solidi (b) -- Substance Classification -- Backmatter
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