Physica status solidi: Volume 73, 1: September 16

Medientyp: E-Book

Titel: Physica status solidi : Volume 73, 1: September 16

Beteiligte: Blasse [Mitwirkende:r]; Görlich [Herausgeber:in]; Abramcv, A. S [Mitwirkende:r]; Agrawal, C.S [Mitwirkende:r]; Agrawal, R.S [Mitwirkende:r]; Akkerman, A. F [Mitwirkende:r]; Alekseeva, L. I [Mitwirkende:r]; Almeida, A [Mitwirkende:r]; Amakusa, T [Mitwirkende:r]; Ambekiadis, K [Mitwirkende:r]; Amelinckx, S [Mitwirkende:r]; Anagnostopoulos, A. N [Mitwirkende:r]; Andreev, A. V [Mitwirkende:r]; Aronov, D. A [Mitwirkende:r]; Avesov, A.D [Mitwirkende:r]; Bagduev, E. G [Mitwirkende:r]; Balynas, V [Mitwirkende:r]; Bansal, C [Mitwirkende:r]; Baumvol, I. J . R [Mitwirkende:r]; Beige, H [Mitwirkende:r]; Bondarenko, L. A [Mitwirkende:r]; Boriskin, S. E [Mitwirkende:r]; Bosman, G [Mitwirkende:r]; Bostaütjoglo, O [Mitwirkende:r]; Brodovoi, A.V [Mitwirkende:r]; Brooks, C. R [Mitwirkende:r]; Brühl, H.-G [Mitwirkende:r]; Bugnet, P [Mitwirkende:r]; Bäk, J [Mitwirkende:r]; Carter, C.B [Mitwirkende:r]; Chattopadhyay, D [Mitwirkende:r]; Damköhler, R [Mitwirkende:r]; Daunay, J [Mitwirkende:r]; Daunay, Jac [Mitwirkende:r]; De Barros, B.A.S [Mitwirkende:r]; Dekhtyar, Yu.D [Mitwirkende:r]; Delavignette, P [Mitwirkende:r]; Deryagin, A.V [Mitwirkende:r]; Dos Santos, C.A [Mitwirkende:r]; Druilhe, R [Mitwirkende:r]; Falco, Ch. M [Mitwirkende:r]; Farber, B.Ya [Mitwirkende:r]; Föll, H [Mitwirkende:r]; Gaidukov, G.N [Mitwirkende:r]; Garbarczyk, J [Mitwirkende:r]; Gasanov, E.M [Mitwirkende:r]; Gautam, V.K [Mitwirkende:r]; Geilek, H.-D [Mitwirkende:r]; Geiler, H.-D [Mitwirkende:r]; Ghodgaonkar, A.M [Mitwirkende:r]; Ghosal, A [Mitwirkende:r]; Gilenko, M.S [Mitwirkende:r]; Godlewska, M [Mitwirkende:r]; Goto, K [Mitwirkende:r]; Grodzinski, A [Mitwirkende:r]; Gueffroy-Oettel, B [Mitwirkende:r]; Götz, G [Mitwirkende:r]; Haneczok, G [Mitwirkende:r]; Hattori, K [Mitwirkende:r]; Hegenbarth, E [Mitwirkende:r]; Hehl, K [Mitwirkende:r]; Heindl, R [Mitwirkende:r]; Henning, I [Mitwirkende:r]; Heumann, Th [Mitwirkende:r]; Hoffmann, G [Mitwirkende:r]; Holland, O. W [Mitwirkende:r]; Igata, N [Mitwirkende:r]; Imura, T [Mitwirkende:r]; Inabe, K [Mitwirkende:r]; Ivanov, S. A [Mitwirkende:r]; Jakubowski, W [Mitwirkende:r]; Karageorgy-Alkalaev, P.M [Mitwirkende:r]; Khan, M. R [Mitwirkende:r]; Kibihata, H [Mitwirkende:r]; Klechkovskaya, V. V [Mitwirkende:r]; Klissurski, I [Mitwirkende:r]; Klotii, B [Mitwirkende:r]; Knab, G. G [Mitwirkende:r]; Kobayashi, T [Mitwirkende:r]; Kolesnikova, A. L [Mitwirkende:r]; Kollie, T. G [Mitwirkende:r]; Kotov, N.M [Mitwirkende:r]; Kovalenko, S. I [Mitwirkende:r]; Kozlovskai, N.A [Mitwirkende:r]; Krainyukova, N . V [Mitwirkende:r]; Krotkus, A [Mitwirkende:r]; Landuyt, J . Van [Mitwirkende:r]; Lau, S. S [Mitwirkende:r]; Leiderman, A.Yu [Mitwirkende:r]; Litovchenko, A.S [Mitwirkende:r]; Liu, Bai-Xin [Mitwirkende:r]; Ludwig, M [Mitwirkende:r]; Löfflee, H [Mitwirkende:r]; Maksimov, K.S [Mitwirkende:r]; Malyutin, V.I [Mitwirkende:r]; Massalska-Abodz, M [Mitwirkende:r]; Melnikov, A.A [Mitwirkende:r]; Mertig, M [Mitwirkende:r]; Meschter, P . J [Mitwirkende:r]; Mitov, I [Mitwirkende:r]; Morato, S.P [Mitwirkende:r]; Moron, J.W [Mitwirkende:r]; Moskalev, V.N [Mitwirkende:r]; Mushnikov, N. V [Mitwirkende:r]; Nabayan, J [Mitwirkende:r]; Nicolet, M-A [Mitwirkende:r]; Nikitenko, V.I [Mitwirkende:r]; Nishino, Y [Mitwirkende:r]; Nojima, S [Mitwirkende:r]; Novozhilov, A.I [Mitwirkende:r]; Nowick, A. S [Mitwirkende:r]; Oelgakt, G [Mitwirkende:r]; Okuno, T [Mitwirkende:r]; Osukhovsku, V.E [Mitwirkende:r]; Peart, S.J [Mitwirkende:r]; Plath, R [Mitwirkende:r]; Ploss, B [Mitwirkende:r]; Pompe, G [Mitwirkende:r]; Pozhidaev, E . D [Mitwirkende:r]; Purkait, N.N [Mitwirkende:r]; Ramani, K [Mitwirkende:r]; Ranganathan, S [Mitwirkende:r]; Ranieri, I.M [Mitwirkende:r]; Reddy, A.D [Mitwirkende:r]; Regel, L. L [Mitwirkende:r]; Regel, V. R [Mitwirkende:r]; Romanov, A.E [Mitwirkende:r]; Rubinov, V.V [Mitwirkende:r]; Rusakov, A. P [Mitwirkende:r]; Saenko, V. S [Mitwirkende:r]; Sagalovich, G. L [Mitwirkende:r]; Salisbury, I.G [Mitwirkende:r]; Samoilovich, V.I [Mitwirkende:r]; Sastry, G. V. S [Mitwirkende:r]; Sastry, G.S [Mitwirkende:r]; Sathyanarayan, S.G [Mitwirkende:r]; Sauer, W [Mitwirkende:r]; Schalge, R [Mitwirkende:r]; Schullee, I . K [Mitwirkende:r]; Sekita, M [Mitwirkende:r]; Self, P . G [Mitwirkende:r]; Sharma, Y.K [Mitwirkende:r]; Shaw, M. P [Mitwirkende:r]; Shikhsaidov, M. Sh [Mitwirkende:r]; Shuvalov, L. A [Mitwirkende:r]; Simmich, O [Mitwirkende:r]; Singh, J [Mitwirkende:r]; Sorge, G [Mitwirkende:r]; Stegmann, R [Mitwirkende:r]; Stobbs, W. M [Mitwirkende:r]; Stock, D [Mitwirkende:r]; Strzeszewski, J [Mitwirkende:r]; Surendranath, K [Mitwirkende:r]; Suryanarayana, C [Mitwirkende:r]; Swiderczak, K [Mitwirkende:r]; Takada, K [Mitwirkende:r]; Takeuchi, N [Mitwirkende:r]; Tavendale, A.J [Mitwirkende:r]; Tishchenko, N. P [Mitwirkende:r]; Tognato, R [Mitwirkende:r]; Tomov, T [Mitwirkende:r]; Tyutnev, A. P [Mitwirkende:r]; Urban, S [Mitwirkende:r]; Urusovskaya, A. A [Mitwirkende:r]; Van Dee Ziel, A [Mitwirkende:r]; Van Tendeloo, G [Mitwirkende:r]; Varin, R. A [Mitwirkende:r]; Verbilo, A. V [Mitwirkende:r]; Vieira, N.D [Mitwirkende:r]; Vorobiev, Yu.D [Mitwirkende:r]; Wagner, M [Mitwirkende:r]; Wang, Da Yu [Mitwirkende:r]; Wasiucionek, M [Mitwirkende:r]; Watari, F [Mitwirkende:r]; Wilkens, M [Mitwirkende:r]; Yuito, M [Mitwirkende:r]; Ziel, A. Van Der [Mitwirkende:r]; Zijlstra, R. J. J [Mitwirkende:r]

Erschienen: Berlin; Boston: De Gruyter, [2022]
[Online-Ausgabe]

Ausgabe: Reprint 2021

Umfang: 1 Online-Ressource (460 p)

Sprache: Englisch

DOI: 10.1515/9783112495001

ISBN: 9783112495001

Identifikator:

Schlagwörter: SCIENCE / General

Art der Reproduktion: [Online-Ausgabe]

Entstehung:

Anmerkungen: In English
Mode of access: Internet via World Wide Web

Beschreibung: Frontmatter -- Author Index -- Contents -- Review Article -- Distribution Model of Flicker Noise in Semiconductors -- Original Papers -- Sputter Epitaxy of Ag and Ni Films -- Electron Microscopic Studies of Crystallization and Magnetic Domain Structure of Mn-Ga Thin Films -- Anomalous Contrast in Weak Beam Images of Stacking Faults -- Effect of Sample Size upon Mean-Square Displacements of Atoms in Solidified Noble Gases -- Microwave Theory of Ballistic GaAs Solid State Diodes and Triodes -- Oscillator Strengths of Transitions between Stark Levels of NdxGd1-xPsO14 -- Dielectric Relaxation in Liquid and Plastic Phases of 2,2-Dinitropropane -- Exoelectron Emission from Metals (Cu, Zn, Au) Excited by Low-Energy Electrons below 200 eV -- Transient Radiation-Induced Conductivity in Polymers -- Influence of Composition Faults on the Anisotropic Conductivity of Layered Semiconductors -- Time-Resolved TEM of Transient Effects in Pulse Annealing of Ge and Ge-Te Films -- Theoretical Considerations on the Diffusion-Controlled Particle Growth in an Isotropic Medium -- Experimentelle Untersuchungen zur Klärung des Diffusionsverhaltens kupferreicher Kupfer-Nickel Legierungen -- The Influence of the Doping Level on the Cathodoluminescence in GaAs1-xPx:N, Zn Epitaxial Layers -- Determination of Nitrogen Concentrations in (111) Oriented VPE-GaP Epitaxial Layers by Measurement of the Precision Lattice Parameter -- Pulse Laser Induced High-Temperature Solid-Phase Annealing of Arsenic Implanted Silicon -- The Dependence of the Reversion of Ghiinier-Preston Zones in an Al-4.5 at% Zn-2.0 at% Mg Alloy on the Pre-Ageing Conditions -- Electrical Characteristics of the InSb Schottky Diode -- A Grain-Boundary-Type Maxwell-Wagner Peak in the Thermally-Stimulated Depolarization of Doped Ceria Ceramics -- Generation Process of Dislocations in Precipitate-Containing Silicon Crystals -- Ti-Au Metallic Glasses Formed by Ion Mixing -- The Magnetic Heat Capacity of the Configurationally Disordered Ni-25 at% Fe Alloy -- A Possible Origin of the Internal Electric Field Responsible of the Anomalous Photovoltage in Twinned ZnSe Single Crystals -- Energy Transfer Phenomena in the System (Y, Ce, Gd, Tb)Fs -- A Numerical Explanation for a Relation of the Domain Width to the Thickness in Barium Ferrite Crystals -- X-Ray Peak Broadening as a Result of Twin Formation in Some Oxides Derived by Dehydration -- Solid-Phase-Epitaxial Growth in Ion-Implanted Silicon -- On Internal Premelting in Metals -- On the Mechanism of F.C.C. -> H.C.P. Transformation -- Mossbauer Study of the Formation of Solid Solutions in the a-Fe2O3-Al203 System -- Influence of Irradiation with Heavy Ions on the Defect Structure and Mechanical Properties of LiF Crystals -- A Structural Study of Vapour-Deposited Al-Pd Alloys -- Self-Diffusion in Rare-Gas Solids -- The NDC and Low-Frequency Electric Instabilities in GaAs Crystals with Dislocations -- Short Notes -- The Influence of Exclusion on Light Absorption by Free Carriers in "Pure" (almost Intrinsic) Semiconductors with Non-Injecting Contacts -- An Anomalous Aspect of GaAs Surface Dissociation by Q-Switch Pulsed Ruby Laser Irradiation -- On the Effect of Lattice Dilatation upon Weak-Beam Contrast from Stacking Faults in Transmission Electron Microscopy -- A Further Comment on the Weak-Beam Contrast of Stacking Faults in Silicon -- Application of the Mayadas-Shatzkes Model for Electrical Conduction in Thin Films with Unlike Surfaces -- Exact J-U Characteristic of an Insulator with Traps Lying above the Fermi Level in Non-Constant Mobility Regime -- Elastic Stresses and Elastic Energy of a Flux Line in a Half-Space -- Some Aspects of Activation Energy Calculations for Thermostimulated Exoelectronic Emission -- Proton Conduction in (NH4)HSO4 Single Crystals -- Red Luminescence in X-Irradiated LiF:Mg -- On the Validity of Interpretation of Some Grain Boundary Processes Based on the Assumption about the Existence of Unrelaxed Extrinsic Grain Boundary Dislocations -- A Model of Energy Deposition into Semiconductors during Laser Annealing -- Elastic Nonlinearity of KH3(SeO3)2 and KD3(SeQ3)2 Crystals -- Some Structure Defects in Neutron Irradiated Fluorphlogopite -- On the Crystalline Structure of Hydrides of ErFe2 and HoFe2 -- Superconductive Properties of the Chevrel-Phase System CuxMo6S8 with x = 3.2 to 3.9 -- The Motion of Deep Donor Centres in Reverse Biased n-GaAs Surface Barrier Diodes -- Study of the Temperature Dependences of Magnetic Susceptibilities and 7Li NMR Spectra of Ferriferrous Micas -- Hall Measurements along Zinc Diffusion Profiles in n-GaAs1-a-xPx (0.6 < x < 1) -- Collision-Dominated Limit of Near-Thermal Noise in Short Solid-State Diodes -- Collision-Free Limit of Near-Thermal Noise in Short Solid-State Diodes -- TGA and DTA Studies on Me-Stabilized B- Alumina (Me = Co, Ni, Cu, Zn) Exposed to Moist Air -- On the Origin of S-Shaped Current-Voltage Characteristics in p-Type Tellurium -- Glass-Like Behaviour of Sr1-xBaxNb2O6 (SBN) Single Crystals Demonstrated by Heat Capacity Measurements -- The Structure Constant and Micromagnetic Structure of Etched Ni80Fe20 Films -- Room Temperature Visible Laser Action of F Aggregated Centers in LiF:Mg, OH Crystals -- High-Frequency Electron Transport in GaxIn1-xAsyP1-y Lattice Matched to InP -- The Analysis of Internal Friction Curves for a Temperature Gradient Existing along the Sample -- Stability of Composition Automodulated Complex Epitaxial Films -- Mossbauer Effect Study of Polymetallic Nodules from Indian Ocean Bed -- Search for Intermetallic Phases in Radiation-Enhanced Diffusion of Tin into Steels -- Change of Dislocation Mobility Characteristics in Silicon Single Crystals at Elevated Temperatures -- Superconduction: On the Sintering of a "Chevrel Phase" - A New High Temperature Phase of PbMo6S8 -- On the Noise of Semiconductor Diode Structures with Strong Carrier Accumulation -- Pre-Printed Titles -- Backmatter

Zugangsstatus: Eingeschränkter Zugang | Informationen zu lizenzierten elektronischen Ressourcen der SLUB

Physica status solidi - [Reprint 2021]

Merkliste

Nur in Feld suchen:

Zuletzt gesuchte Begriffe: