> Detailanzeige
Abramova, G. M
[MitwirkendeR];
Arakelyan, V. S
[MitwirkendeR];
Aresti, A
[MitwirkendeR];
Aseev, A. L
[MitwirkendeR];
Ashwell, G. J
[MitwirkendeR];
Avakyan, A. A
[MitwirkendeR];
Bannykh, L. N
[MitwirkendeR];
Baumer, A
[MitwirkendeR];
Berdowski, J
[MitwirkendeR];
Bernède, J. C
[MitwirkendeR];
Bhaedwaj, R. P
[MitwirkendeR];
Bhattacharya, R. S
[MitwirkendeR];
Blaszkiewicz, M
[MitwirkendeR];
Bogdanski, P
[MitwirkendeR];
Bolotov, I. E
[MitwirkendeR];
Borimskii, V. V
[MitwirkendeR];
Boulesteix, C
[MitwirkendeR];
Carin, R
[MitwirkendeR];
Carter, C. B
[MitwirkendeR];
Chabai, A
[MitwirkendeR];
Chojcan, J
[MitwirkendeR];
Chudinov, V. G
[MitwirkendeR];
Colinet, C
[MitwirkendeR];
Da Jornada, J . A. H
[MitwirkendeR];
[...]
Physica status solidi
: Volume 80, Number 1: November 16
- [Reprint 2021]
Teilen
Literatur-
verwaltung
Direktlink
Zur
Merkliste
Lösche von
Merkliste
Per Email teilen
Auf Twitter teilen
Auf Facebook teilen
Per Whatsapp teilen
- Medientyp: E-Book
- Titel: Physica status solidi : Volume 80, Number 1: November 16
- Beteiligte: Görlich [HerausgeberIn]; Abramova, G. M [MitwirkendeR]; Arakelyan, V. S [MitwirkendeR]; Aresti, A [MitwirkendeR]; Aseev, A. L [MitwirkendeR]; Ashwell, G. J [MitwirkendeR]; Avakyan, A. A [MitwirkendeR]; Bannykh, L. N [MitwirkendeR]; Baumer, A [MitwirkendeR]; Berdowski, J [MitwirkendeR]; Bernède, J. C [MitwirkendeR]; Bhaedwaj, R. P [MitwirkendeR]; Bhattacharya, R. S [MitwirkendeR]; Blaszkiewicz, M [MitwirkendeR]; Bogdanski, P [MitwirkendeR]; Bolotov, I. E [MitwirkendeR]; Borimskii, V. V [MitwirkendeR]; Boulesteix, C [MitwirkendeR]; Carin, R [MitwirkendeR]; Carter, C. B [MitwirkendeR]; Chabai, A [MitwirkendeR]; Chojcan, J [MitwirkendeR]; Chudinov, V. G [MitwirkendeR]; Colinet, C [MitwirkendeR]; Da Jornada, J . A. H [MitwirkendeR]; Dal Monte, C [MitwirkendeR]; Deus, P [MitwirkendeR]; Doenitz, F. D [MitwirkendeR]; Drzazga, Z [MitwirkendeR]; Dudnikova, V. B [MitwirkendeR]; Duhaj, P [MitwirkendeR]; Faenum, D. J [MitwirkendeR]; Fernengel, W [MitwirkendeR]; Fraga, E. R [MitwirkendeR]; Fries, S. G [MitwirkendeR]; Gardais, O [MitwirkendeR]; Gasgnier, M [MitwirkendeR]; Gbabov, V. M [MitwirkendeR]; Georgobiani, A. N [MitwirkendeR]; Georgy, K. H [MitwirkendeR]; Glinchuk, K. D [MitwirkendeR]; Glowacki, B [MitwirkendeR]; Goeobets, A. G [MitwirkendeR]; Gogolin, V. P [MitwirkendeR]; Golovin, A. L [MitwirkendeR]; Golubkov, A. V [MitwirkendeR]; Goshchitskii, B. N [MitwirkendeR]; Gruzintsev, A. N [MitwirkendeR]; Gubebnatob, W [MitwirkendeR]; Guseinov, G. M [MitwirkendeR]; Haasen, P [MitwirkendeR]; Heinemann, S [MitwirkendeR]; Herrmann, K. H [MitwirkendeR]; Hinze, B [MitwirkendeR]; Hirai, M [MitwirkendeR]; Hkivnák, L [MitwirkendeR]; Hoehl, D [MitwirkendeR]; Imamov, R. M [MitwirkendeR]; Inal, O. T [MitwirkendeR]; Ivanovitch, M. D [MitwirkendeR]; Jain, H [MitwirkendeR]; Jansen, S [MitwirkendeR]; Jones, M. T [MitwirkendeR]; Jung, T [MitwirkendeR]; Kamel, R [MitwirkendeR]; Kaminskii, A. A [MitwirkendeR]; Kennard, C. H. L [MitwirkendeR]; Khodzhabagyan, G. G [MitwirkendeR]; Kietis, B.-P [MitwirkendeR]; Kindyak, V. V [MitwirkendeR]; Kolitsch, A [MitwirkendeR]; Konstantinova, A. F [MitwirkendeR]; Koren, N. N [MitwirkendeR]; Kostyk, L. V [MitwirkendeR]; Kravchishyn, V. V [MitwirkendeR]; Kronmüller, H [MitwirkendeR]; Kubalek, E [MitwirkendeR]; Kusaka, M [MitwirkendeR]; Kühn, G [MitwirkendeR]; Kühnel, G [MitwirkendeR]; Lapkaz, D [MitwirkendeR]; Ling, C. H [MitwirkendeR]; Litovchenko, N. M [MitwirkendeR]; Livi, R. P [MitwirkendeR]; Loseva, G. V [MitwirkendeR]; Löhnebt, K [MitwirkendeR]; Maciel, A [MitwirkendeR]; Matyas, E. E [MitwirkendeR]; Meclewski, R [MitwirkendeR]; Meisterle, P [MitwirkendeR]; Meloni, F [MitwirkendeR]; Micocci, G [MitwirkendeR]; Mikulyonok, A. V [MitwirkendeR]; Mill, B. V [MitwirkendeR]; Mojzes, I [MitwirkendeR]; Mydlarz, T [MitwirkendeR]; Möllmann, K.-P [MitwirkendeR]; Müller, H [MitwirkendeR]; Nagpaul, K. K [MitwirkendeR]; Neumann, H [MitwirkendeR]; Niftiev, G. M [MitwirkendeR]; Obodnikov, V [MitwirkendeR]; Okazaki, S [MitwirkendeR]; Okorochkov, A. I [MitwirkendeR]; Olikh, Ya. M [MitwirkendeR]; Oskotskii, V. S [MitwirkendeR]; Otko, A. I [MitwirkendeR]; Pabi, S. K [MitwirkendeR]; Pasemann, M [MitwirkendeR]; Pasturel, A [MitwirkendeR]; Pazosz, B [MitwirkendeR]; Pchelyakov, O. P [MitwirkendeR]; Pebaisger, R [MitwirkendeR]; Pegna, G. G [MitwirkendeR]; Peotasov, V. I [MitwirkendeR]; Pfeiler, W [MitwirkendeR]; Pietsch, U [MitwirkendeR]; Plachkova, S. K [MitwirkendeR]; Plusa, D [MitwirkendeR]; Priemuth, A [MitwirkendeR]; Prilepo, V. L [MitwirkendeR]; Pronko, P. P [MitwirkendeR]; Quamara, J. K [MitwirkendeR]; Radautsan, S. I [MitwirkendeR]; Rai, A. K [MitwirkendeR]; Rauschenbach, B [MitwirkendeR]; Reksnys, R [MitwirkendeR]; Rizzo, A [MitwirkendeR]; Roth, L [MitwirkendeR]; Salnik, Z. A [MitwirkendeR]; Schmidt, W. D [MitwirkendeR]; Schneider, H. A [MitwirkendeR]; Schröter, W [MitwirkendeR]; Sebka, M [MitwirkendeR]; Sebvidobi, M [MitwirkendeR]; Shakhtakhtinskii, M. G [MitwirkendeR]; Shakma, B. L [MitwirkendeR]; Shimada, Y [MitwirkendeR]; Siegel, W [MitwirkendeR]; Silvestrova, I. M [MitwirkendeR]; Simeonov, S. S [MitwirkendeR]; Smibnov, I. A [MitwirkendeR]; Stewart, A. M [MitwirkendeR]; Stoyanova, I. G [MitwirkendeR]; Surma, S [MitwirkendeR]; Svec, P [MitwirkendeR]; Süssmann, H [MitwirkendeR]; Tatarkiewicz, J [MitwirkendeR]; Tepore, A [MitwirkendeR]; Tiginyanu, I. M [MitwirkendeR]; Tikhonov, V. V [MitwirkendeR]; Tognato, R [MitwirkendeR]; Tomáš, I [MitwirkendeR]; Tumkevičus, K [MitwirkendeR]; Ungee, K [MitwirkendeR]; Urusov, V. S [MitwirkendeR]; Vasilev, E. A [MitwirkendeR]; Vasilev, L. N [MitwirkendeR]; Vasilev, S [MitwirkendeR]; Vaulin, Yu [MitwirkendeR]; Veresegyhazy, R [MitwirkendeR]; Virchenko, V. A [MitwirkendeR]; Vizot, J [MitwirkendeR]; Voland, U [MitwirkendeR]; Vázquez, M [MitwirkendeR]; Walko, R. J [MitwirkendeR]; Whittle, G. L [MitwirkendeR]; Wittrich, H [MitwirkendeR]; Wyseocki, B [MitwirkendeR]; Xosenko, A. E [MitwirkendeR]; Ziegler, E [MitwirkendeR]; Zini, Q [MitwirkendeR]; Zuaìtni, F [MitwirkendeR]
-
Erschienen:
Berlin; Boston: De Gruyter, [2022]
[Online-Ausgabe] - Erschienen in: Physica status solidi ; Volume 80, Number 1 ; A
- Ausgabe: Reprint 2021
- Umfang: 1 Online-Ressource (544 p)
- Sprache: Englisch
- DOI: 10.1515/9783112494769
- ISBN: 9783112494769
- Identifikator:
- Schlagwörter: SCIENCE / General
- Art der Reproduktion: [Online-Ausgabe]
- Entstehung:
-
Anmerkungen:
In English
Mode of access: Internet via World Wide Web
- Beschreibung: Author Index -- Classification Scheme -- Contents -- Review Article -- Reasons for Polytypism of Crystals of the Type MX2 -- Original Papers -- Internal Forces in Magnetic Bubble Lattices -- Multiple Ribbons in Face-Centered Cubic Materials -- The Influence of Isotope Effects on Anomalous Changes of Dielectric and Electric Properties of DADA Crystals in the Bange of the Phase Transition -- Magnetic Domain Structure in Polycrystalline DyFe2 Compounds -- Determination of Quasi-Fermi Level at the Metal-Semiconductor Interface in a Forward-Biased Schottky Barrier Diode -- Influence du métal de l'anode sur l'existence d'une résistance différentielle négative dans des structures MIM -- The Transient Creep of Cobalt near the Temperature of Transformation -- Mössbauer Effect Study of Fe 85-x NixB15 Metallic Glasses -- Non-Equilibrium Carrier Radiative Recombination in Indium Phosphide Single Crystals -- Microwave Radiometric Study of Ferro-Paraelectric Phase Transitions in KNO3 -- (Diethyldiphenylphosphonium)+ (7,7,8,8-tetracyano-pquinodimethanide) 2, a Novel Quasi-One-Dimensional Organic Conductor -- Analysis of Rod-Like Defects in Silicon and Germanium by Means of High-Resolution Electron Microscopy -- On the Storage and Detection of Multiple Flux Quantum States in Thin Film Double SQUIDs -- Why Metals Do Not Show Overheating -- Electrical and Photoelectrical Properties of Semi-Insulating GaP -- The Influence of Free Carriers on the Equilibrium Lattice Parameter of Semiconductor Materials -- On the Degradation of Electroluminescence Efficiency in Gallium Phosphide Green Light Emitting Diodes -- Caractérisation de structures MIS (Al-Si3N4-GaAs) par différentes méthodes capacitives -- The Effect of Tensile Stresses on the Magnetic Properties of Co58Fe5Ni10Si11B16 Amorphous Alloys -- Low-Temperature Thermal Expansion in CuInSe2 -- Formation of Compounds by Nitrogen Ion Implantation in Iron -- Thermopower of Plastically Deformed Cadmium Telluride -- Transmission Electron Microscopy Study of Crystallization in Amorphous Fe40Ni40B20 Alloy -- Physical Properties and Phase Transitions of the Rare Earth Monosulphides in the Homogeneity Bange -- Study of the Nuclear Quadrupole Interaction in Tl5Te3 -- Isothermal Currents in InSe, GaSe, and GaS Single Crystals -- A Rearranged Structure on a Rhenium Surface -- Double Crystal X-Ray Analysis of Phosphorus Precipitation in Supersaturated Si-P Solid Solutions -- A Field-Ion Microscopy Study of Ion Damage to Tungsten -- On the Variation of Interface Composition around a Dissolving Precipitate -- On the Determination of Carrier Mobilities and Densities in Semi-Insulating GaAs -- Thermally Stimulated Spontaneous Currents from Kapton Polyimide- Metal Contacts -- Visualization and Study of the Shape and Size of Very Small Coherent Precipitates by a Phase Contrast Method -- Annealing Behaviour of Oxygen-Induced Recombination Centres in Silicon -- Evolution of the Cascade Region in Nb3Sn During the Thermal Spike under Fast-Neutron Irradiation -- Thermoluminescent Properties of Synthetic and Natural Fluorapatite, Ca5(PO4)3F -- Annealing of Amorphous Layer in Si Implanted GaAs -- Growth Macrodefects in Ca3Ga2Ge3O12 Single Crystals -- Investigation of Trigonal (La 1-x Ndx)3Ga5SiO14 Crystals -- Solvus of KCl:Ba 2+ Solid Solution from Flotation Measurements of Single Crystal Density -- Magnetic Properties of the ErCo 5.5-x Cux Alloys -- Erratum -- Short Notes -- Complex Crystallization Phenomena in Rare-Earth Binary Alloys and Compounds as Thin Films -- On the Relation between the Carrier Concentration and the Effective Ion Charge of Interstitial Cu at the Electromigration in V2VI3 Compounds -- Auger Analysis of Plasma-Grown GaAs Oxide Films -- Haven Ratio for Sodium in Synthetic α-Quartz -- Effect of External Factors on the Thermally Stimulated Conductivity of GdIn3S6 Single Crystals -- Change in Capacitance of InP MIS Diodes Caused by the Piezoelectric Effect -- Thermal Expansion of GaP within 20 to 300 K -- Mapping the Redistributed Components of the Au-Ge/GaAs System after Scanning Laser Annealing -- Short-Range Ordering in the Matrix of a Two-Phase AgAl Alloy -- Hyperfine Interactions of 57Fe and 119Sn in Iron Antimonide Base Alloys -- The Contribution of Iodine Impurity to the Formation of Centers in CdGa2S4 Single Crystals -- Fast Electron Annealing of IR Absorption Bands of Proton Bombarded Silicon -- The Tetradecahedron as a Really Existing Structural Unit in Metallic Glasses of the Interstitial Type -- Hall Effect and Acoustoelectric Phenomena in PbTe Films -- Resisitivity Change in Ti/Au Bimetal Films Annealed in the Temperature Range 300 to 400 °C -- Obtaining Quantitative Information on Amorphous Layer Thickness on Crystal Surface Using X-Ray Diffraction under Specular Reflection Conditions -- On the Vacancy Mechanism of the Occurrence of Compressive Stresses during Crystallization of Amorphous Films -- Diffusion of Interstitial Admixture in Solids Due to Standing Ultrasound Wave -- A Thermodynamic Study of Cerium Behaviour in Hexagonal CeNig Compound -- Characteristics of Sound Waves Propagating in the Symmetry Plane of Pyrargyrite and Proustite Crystals -- Fabrication arid Some Magnetization Characteristics of Amorphous Cores with Multilayered Structure -- Studies on the Condition of Obtaining a Single Phase Superconducting Nb^Sn Layer by Mossbauer Spectroscopy -- Thermoelectric Power in the System (GeTe)1-x(AgSbTe2)x -- Curie Temperature as a Critical Temperature for Dielectric, Galvanomagnetic, and Photoelectric Phenomena in Strongly Doped Pb 1-x SnxTe -- Phase Diagram of the System GeS-GeSe -- Anomalies of Electric and Magnetic Properties of Ternary Cobalt Sulfides -- Pre-Printed Titles -- Manuscripts and letters for physica status solidi (b) — basic research and physica status solidi (a) — applied research
- Zugangsstatus: Eingeschränkter Zugang | Informationen zu lizenzierten elektronischen Ressourcen der SLUB