Handte, Thomas
[VerfasserIn];
Scheller, Nicolas
[VerfasserIn];
Dittrich, Lars
[VerfasserIn];
Thesen, Manuel W.
[VerfasserIn];
Messerschmidt, Martin
[VerfasserIn];
Sinzinger, Stefan
[VerfasserIn]
Manufacturing of nanostructures with high aspect ratios using soft UV-nanoimprint lithography with bi- and trilayer resist systems
Beschreibung:
In this contribution we introduce new multilayer (bilayer and trilayer) resist systems for the generation of nanostructures with high aspect ratios of up to 14:1 on 4-in. full wafer scale. The bilayer stack consists of a bottom resist layer (lift off polymer LOR1A) and an UV-curable top resist layer (UV-NIL resist mr-NIL210 200 nm). The top resist is structured by UV-nanoimprint lithography with a soft polydimethysiloxane (PDMS) stamp (soft UV-NIL). After removal of the residual layer a wet chemical development is performed to achieve an isotropic undercut underneath the nanostructures in the top layer. This undercut is mandatory in order to perform a reliable and precise lift-off. The bilayer system is applicable on both silicon and fused silica. For a higher variety and combination of different resists, a trilayer system is investigated. A layer stack with new materials for bottom and top layer is presented. An intermediate layer made of silicon oxide by low temperature ICP-PECVD is added between a tailor-made top resist (mr-NIL213FC 200 nm) and an organic transfer layer (UL1). The intermediate layer serves as hard mask in order to etch the bottom layer isotropically utilizing a plasma etch process and thus replacing the wet-chemical development step. Subsequently, a thin metal layer is deposited onto the structured resist stack by electron beam evaporation. After lift-off, a nanostructured metal mask remains on the substrate providing a high selectivity during the following plasma etch step. A cryogenic ICPRIE etch process creates high aspect ratio nanostructures within the substrate. An aspect ratio of 14:1 was achieved.