> Detailanzeige
Ageev, V
[MitwirkendeR];
Akchulakov, M. T
[MitwirkendeR];
Albert, M
[MitwirkendeR];
Albrecht, J
[MitwirkendeR];
Aleksandrov, L. N
[MitwirkendeR];
Aleshin, A. N
[MitwirkendeR];
Aliev, V. Sh
[MitwirkendeR];
Antropov, A. lf
[MitwirkendeR];
Arbuzov, V. Y
[MitwirkendeR];
Artsimovich, M. V
[MitwirkendeR];
Ascheron, C
[MitwirkendeR];
Bachmann, T
[MitwirkendeR];
Baghaev, V. N
[MitwirkendeR];
Baither, D
[MitwirkendeR];
Bakaj, A. S
[MitwirkendeR];
Balandin, V. Iu
[MitwirkendeR];
Baljtjba, V. I
[MitwirkendeR];
Baltramiejünas, R
[MitwirkendeR];
Bandurin, Yu. A
[MitwirkendeR];
Banisch, R
[MitwirkendeR];
Barabanenkov, M. Y
[MitwirkendeR];
Baranov, A. N
[MitwirkendeR];
Bartl, Rolf-Reiner
[MitwirkendeR];
Bartsch, H
[MitwirkendeR];
[...]
EPM '89: 3rd International Conference on Energy Pulse and Particle Beam Modification of Materials, September 4.-8. 1989, Dresden, GDR
- [Reprint 2021]
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- Titel: EPM '89: 3rd International Conference on Energy Pulse and Particle Beam Modification of Materials, September 4.-8. 1989, Dresden, GDR
- Beteiligte: Ageev, V [MitwirkendeR]; Akchulakov, M. T [MitwirkendeR]; Albert, M [MitwirkendeR]; Albrecht, J [MitwirkendeR]; Aleksandrov, L. N [MitwirkendeR]; Aleshin, A. N [MitwirkendeR]; Aliev, V. Sh [MitwirkendeR]; Antropov, A. lf [MitwirkendeR]; Arbuzov, V. Y [MitwirkendeR]; Artsimovich, M. V [MitwirkendeR]; Ascheron, C [MitwirkendeR]; Bachmann, T [MitwirkendeR]; Baghaev, V. N [MitwirkendeR]; Baither, D [MitwirkendeR]; Bakaj, A. S [MitwirkendeR]; Balandin, V. Iu [MitwirkendeR]; Baljtjba, V. I [MitwirkendeR]; Baltramiejünas, R [MitwirkendeR]; Bandurin, Yu. A [MitwirkendeR]; Banisch, R [MitwirkendeR]; Barabanenkov, M. Y [MitwirkendeR]; Baranov, A. N [MitwirkendeR]; Bartl, Rolf-Reiner [MitwirkendeR]; Bartsch, H [MitwirkendeR]; Baryakhtar, I.V [MitwirkendeR]; Bayadilov, E. M [MitwirkendeR]; Becker, S [MitwirkendeR]; Belousov, V. T [MitwirkendeR]; Benyagoub, A [MitwirkendeR]; Berova, D [MitwirkendeR]; Bertolotti, M [MitwirkendeR]; Bialoskozewski, J [MitwirkendeR]; Bischoff, L [MitwirkendeR]; Blochwitz, C [MitwirkendeR]; Bobeth, M [MitwirkendeR]; Bobitski, Ya. V [MitwirkendeR]; Bogdenovich, B.Yu [MitwirkendeR]; Brauns, B [MitwirkendeR]; Budinavičius, J [MitwirkendeR]; Bugiel, E [MitwirkendeR]; Bumay, Yu. A [MitwirkendeR]; Burenkov, A. F [MitwirkendeR]; Busin, Y. G [MitwirkendeR]; Byzhnitsyn, A. B [MitwirkendeR]; Bärinann, J [MitwirkendeR]; Cestari, C [MitwirkendeR]; Checha, V. P [MitwirkendeR]; Chelnokov, V. E [MitwirkendeR]; Chernakova, A [MitwirkendeR]; Chernenko, S. V [MitwirkendeR]; Choi, G. H [MitwirkendeR]; Choi, Kong Hyon [MitwirkendeR]; Choupyatova, L [MitwirkendeR]; Chudoba, T [MitwirkendeR]; Cháb, V [MitwirkendeR]; Claverie, A [MitwirkendeR]; Climent, A [MitwirkendeR]; Craciun, V [MitwirkendeR]; Dancheva, E [MitwirkendeR]; Danilin, A.B [MitwirkendeR]; Danilovich, J [MitwirkendeR]; De Veirman, Ann [MitwirkendeR]; Deltschew, R [MitwirkendeR]; Dement'ev, B.P [MitwirkendeR]; Demkovich, I. V [MitwirkendeR]; Deshkovskaya, A. A [MitwirkendeR]; Dietsch, R [MitwirkendeR]; Dietze, H. J [MitwirkendeR]; Dilk, I. A [MitwirkendeR]; Domanevskii, D. S [MitwirkendeR]; Domanewskii, D. S [MitwirkendeR]; Domorod, N. E [MitwirkendeR]; Donnet, C [MitwirkendeR]; Drako, V. M [MitwirkendeR]; Drandarov, Novak [MitwirkendeR]; Drechsler, L [MitwirkendeR]; Driesel, W [MitwirkendeR]; Drigo, A. V [MitwirkendeR]; Dudonis, J [MitwirkendeR]; Dvurechenskii, A. V [MitwirkendeR]; Dvurechenskii, A.V [MitwirkendeR]; Dvurechensky, A. V [MitwirkendeR]; Emiraliev, A [MitwirkendeR]; Eolikaaakas, V. S [MitwirkendeR]; Erfurth, M [MitwirkendeR]; Erikhodko, I. I [MitwirkendeR]; Evseev, B. S [MitwirkendeR]; Feodorov, A. N [MitwirkendeR]; Ferrari, A [MitwirkendeR]; Feudel, T [MitwirkendeR]; Filimonov, Yu. V [MitwirkendeR]; Fischer, K [MitwirkendeR]; Furmonavičius, D [MitwirkendeR]; Gancharik, T. S [MitwirkendeR]; Garapadskii, A. A [MitwirkendeR]; Gavrilov, M. M [MitwirkendeR]; Gaška, R [MitwirkendeR]; Geiler, H. D [MitwirkendeR]; Geisler, V. A [MitwirkendeR]; Geßner, T [MitwirkendeR]; Gilpérez, J. M [MitwirkendeR]; Goltsev, V. P [MitwirkendeR]; Gorbachenko, S. G [MitwirkendeR]; Gorin, S. N [MitwirkendeR]; Gotra, Z. Fu [MitwirkendeR]; Gotra, Z. Yu [MitwirkendeR]; Grande, I. Y [MitwirkendeR]; Gribkovskii, R. V [MitwirkendeR]; Grigorjev, L. S [MitwirkendeR]; Groetzschel, R [MitwirkendeR]; Grotzachel, F [MitwirkendeR]; Grótzschel, R [MitwirkendeR]; Grötzschel, R [MitwirkendeR]; Grünewald, W [MitwirkendeR]; Gunot, U [MitwirkendeR]; Gupta, A [MitwirkendeR]; Gusakov, G. M [MitwirkendeR]; Gusinsky, G. M [MitwirkendeR]; Guzman, L [MitwirkendeR]; Gänsicke, F [MitwirkendeR]; Gärtner, K [MitwirkendeR]; Götz, G [MitwirkendeR]; Hee, V [MitwirkendeR]; Heera, V [MitwirkendeR]; Helming, K [MitwirkendeR]; Hemment, P. L. F [MitwirkendeR]; Henke, D [MitwirkendeR]; Hentschel, E [MitwirkendeR]; Hentschel, R [MitwirkendeR]; Hertens, A [MitwirkendeR]; Hesse, K [MitwirkendeR]; Hevesi, I [MitwirkendeR]; Hevolin, T. H [MitwirkendeR]; Heydenreich, J [MitwirkendeR]; Hlávka, J [MitwirkendeR]; Hoehl, D [MitwirkendeR]; Hoeppner, K [MitwirkendeR]; Hoffmann, W [MitwirkendeR]; Hohauth, K [MitwirkendeR]; Hohmuth, Karl [HerausgeberIn]; Horoderiski, A [MitwirkendeR]; Höfner, P [MitwirkendeR]; Hörig, W [MitwirkendeR]; Hüller, J [MitwirkendeR]; Itin, V. I [MitwirkendeR]; Ivanov, O. M [MitwirkendeR]; Ivlev, G. D [MitwirkendeR]; Iwaki, Masaya [MitwirkendeR]; Jiřfček, P [MitwirkendeR]; Jiřífiček, P [MitwirkendeR]; Johansen, H [MitwirkendeR]; Kachurin, G. A [MitwirkendeR]; Kaczanowski, J [MitwirkendeR]; Kagadey, V. A [MitwirkendeR]; Kalinushkin, V. P [MitwirkendeR]; Kanter, B. Z [MitwirkendeR]; Kasko, I. V [MitwirkendeR]; Kazak, L. A [MitwirkendeR]; Kazdaev, Kh. R [MitwirkendeR]; Kejhar, Martin [MitwirkendeR]; Kelly, Roger [MitwirkendeR]; Keßler, G [MitwirkendeR]; Khabelaehvili, I. D [MitwirkendeR]; Khabelashvili, I. D [MitwirkendeR]; Khaibullin, I. B [MitwirkendeR]; Khodasevich, V. V [MitwirkendeR]; Khodaseyich, V. V [MitwirkendeR]; Khomsevich, V. V [MitwirkendeR]; Khytko, V. I [MitwirkendeR]; Knothe, P [MitwirkendeR]; Koch, E [MitwirkendeR]; Kogler, R [MitwirkendeR]; Kolltsch, A [MitwirkendeR]; Kolodii, V. N [MitwirkendeR]; Kolshlbaeva, G. H [MitwirkendeR]; Kolyadenko, S. H [MitwirkendeR]; Kolyadenko, S. N [MitwirkendeR]; Komar, V. P [MitwirkendeR]; Komarov, F. F [MitwirkendeR]; Komarov, P. P [MitwirkendeR]; Komarovsky, I. A [MitwirkendeR]; Konopljanik, G. G [MitwirkendeR]; Konov, V. I [MitwirkendeR]; Kopchenov, V. I [MitwirkendeR]; Korenev, S. A [MitwirkendeR]; Korobeinlkov, V. P [MitwirkendeR]; Korotov, V. F [MitwirkendeR]; Korshunov, F. P [MitwirkendeR]; Kostjunin, A. A [MitwirkendeR]; Kothari, D. C [MitwirkendeR]; Kotljarevsky, M. B [MitwirkendeR]; Kotte, R [MitwirkendeR]; Kreißig, U [MitwirkendeR]; Krjuchkov, Yu. Yu [MitwirkendeR]; Krynicki, J [MitwirkendeR]; Kubátová, J [MitwirkendeR]; Kuclriavtsev, E. M [MitwirkendeR]; Kukovitsky, E. F [MitwirkendeR]; Kulikauskas, V. S [MitwirkendeR]; Kulyasova, O. A [MitwirkendeR]; Kuokštis, E [MitwirkendeR]; Kuroohkina, T. V [MitwirkendeR]; Kuzemchenko, T. A [MitwirkendeR]; Kuzmichov, A. V [MitwirkendeR]; Kuzmin, O. S [MitwirkendeR]; Küchler, R [MitwirkendeR]; Landi, E [MitwirkendeR]; Langner, J [MitwirkendeR]; Laschena, M [MitwirkendeR]; Lebedeva, N. I [MitwirkendeR]; Leggieri, G [MitwirkendeR]; Lehmann, D [MitwirkendeR]; Lemke, H [MitwirkendeR]; Lenkeit, K [MitwirkendeR]; Leshchenko, M. E [MitwirkendeR]; Leshchenko, M.E [MitwirkendeR]; Ligachev, A. E [MitwirkendeR]; Limanov, A. B [MitwirkendeR]; Linnros, Jan [MitwirkendeR]; Liu, Bai-Xin [MitwirkendeR]; Luches, A [MitwirkendeR]; Lukeš, I [MitwirkendeR]; Lutterotti, L [MitwirkendeR]; Lyaenko, V. S [MitwirkendeR]; Lychagin, D. V [MitwirkendeR]; Lykov, S. V [MitwirkendeR]; Lysenko, Eh. V [MitwirkendeR]; Lysenko, V. S [MitwirkendeR]; Lämmel, B [MitwirkendeR]; Makarov, V. H [MitwirkendeR]; Makarov, V. N [MitwirkendeR]; Makhmudov, M. A [MitwirkendeR]; Malinin, A. A [MitwirkendeR]; Maller, H [MitwirkendeR]; Manenkov, A. A [MitwirkendeR]; Manzhosov, Yu. A [MitwirkendeR]; Marest, G [MitwirkendeR]; Martino, M [MitwirkendeR]; Martínez-Duart, J. M [MitwirkendeR]; Maslakov, A. I [MitwirkendeR]; Matthai, J [MitwirkendeR]; Mesyats, G. A [MitwirkendeR]; Metzig, K [MitwirkendeR]; Mihailescu, I. N [MitwirkendeR]; Mikhailova, G. N [MitwirkendeR]; Miller, B [MitwirkendeR]; Milutin, V. M [MitwirkendeR]; Minaev, S. A [MitwirkendeR]; Miotello, A [MitwirkendeR]; Mogilnik, I. F [MitwirkendeR]; Moncoffre, N [MitwirkendeR]; Mordkovich, V. N [MitwirkendeR]; Muller, R [MitwirkendeR]; Murzin, I. G [MitwirkendeR]; Musatova, L. V [MitwirkendeR]; Müller, A [MitwirkendeR]; Müller, H [MitwirkendeR]; Nachring, F. K [MitwirkendeR]; Naehring, F. K [MitwirkendeR]; Nanai, L [MitwirkendeR]; Nazarov, A. N [MitwirkendeR]; Neahov, F. G [MitwirkendeR]; Neelmeijer, C [MitwirkendeR]; Netikšis, V [MitwirkendeR]; Neubert, F [MitwirkendeR]; Neumann, H [MitwirkendeR]; Nevolin, T. N [MitwirkendeR]; Nikitenkov, N. N [MitwirkendeR]; Niklforov, A. I [MitwirkendeR]; Nikolov, Borlslav [MitwirkendeR]; Nikonov, A. A [MitwirkendeR]; Novikov, A. P [MitwirkendeR]; Novikov, A [MitwirkendeR]; Novikov, P. L [MitwirkendeR]; Novikova, G. M [MitwirkendeR]; Oang, Quoc Chung [MitwirkendeR]; Orlenko, V. F [MitwirkendeR]; Ortlepp, H. G [MitwirkendeR]; Otto, G [MitwirkendeR]; Otto, Th [MitwirkendeR]; Ozhur, G. E [MitwirkendeR]; Ozur, G. E [MitwirkendeR]; Panknin, D [MitwirkendeR]; Panzner, M [MitwirkendeR]; Pattachov, Ta. V [MitwirkendeR]; Pavienko, A. A [MitwirkendeR]; Pavlovich, V. N [MitwirkendeR]; Peksheva, T. E [MitwirkendeR]; Perrière, J [MitwirkendeR]; Petrauskas, M [MitwirkendeR]; Petrov, S. A [MitwirkendeR]; Petrov, V. A [MitwirkendeR]; Petukhov, V. Yu [MitwirkendeR]; Pham, M.T [MitwirkendeR]; Pichugin, V. F [MitwirkendeR]; Piekoszewski, J [MitwirkendeR]; Pirrwitz, A [MitwirkendeR]; Pivovar, V. S [MitwirkendeR]; Plotnikov, A. E [MitwirkendeR]; Plotnikov, S.V [MitwirkendeR]; Poape, W [MitwirkendeR]; Pochrybniak, C [MitwirkendeR]; Pogrebnjak, A A. D [MitwirkendeR]; Pogrebnjak, A. D [MitwirkendeR]; Polman, A [MitwirkendeR]; Pompe, A [MitwirkendeR]; Pompe, V [MitwirkendeR]; Pompe, W [MitwirkendeR]; Pons, F [MitwirkendeR]; Pop, S. S [MitwirkendeR]; Popor, B. T [MitwirkendeR]; Popov, P. B [MitwirkendeR]; Popov, V. P [MitwirkendeR]; Poshelt, M [MitwirkendeR]; Posselt, M [MitwirkendeR]; Potemkin, G. V [MitwirkendeR]; Prager, L [MitwirkendeR]; Pranevičius, L [MitwirkendeR]; Preuß, E [MitwirkendeR]; Principi, G [MitwirkendeR]; Proakurovaky, D. I [MitwirkendeR]; Proakurovskii, D. I [MitwirkendeR]; Proekuroveky, O. I [MitwirkendeR]; Prokofiev, D. D [MitwirkendeR]; Prokopenko, V. B [MitwirkendeR]; Proskuroveky, D. I [MitwirkendeR]; Proskurovsky, D. I [MitwirkendeR]; Psoskdhovsky, D. E [MitwirkendeR]; Pushkareva, G. V [MitwirkendeR]; Pyatkova, T. M [MitwirkendeR]; Quaranta, F [MitwirkendeR]; Quian, L. S [MitwirkendeR]; Radjabov, O [MitwirkendeR]; Rauschenbach, B [MitwirkendeR]; Reeson, K. J [MitwirkendeR]; Reiße, G [MitwirkendeR]; Remnjev, G. E [MitwirkendeR]; Reutberg, H [MitwirkendeR]; Reuther, H [MitwirkendeR]; Richter, E [MitwirkendeR]; Richter, Edgar [HerausgeberIn]; Richter, F [MitwirkendeR]; Richter, H. H [MitwirkendeR]; Richter, K [MitwirkendeR]; Ritscheli, C [MitwirkendeR]; Romanov, I. G [MitwirkendeR]; Romanov, S. I [MitwirkendeR]; Romanuk, B. N [MitwirkendeR]; Rossi, M [MitwirkendeR]; Rotahtein, V. P [MitwirkendeR]; Rother, B [MitwirkendeR]; Rudko, G. Yu [MitwirkendeR]; Ruzimov, Sh. M [MitwirkendeR]; Ryzhnitsyn, A. B [MitwirkendeR]; Rzewuski, H [MitwirkendeR]; Röhrich, J [MitwirkendeR]; Sadovskaya, O. L [MitwirkendeR]; Savchenko, A. O [MitwirkendeR]; Scardi, P [MitwirkendeR]; Schade, K [MitwirkendeR]; Schindler, A [MitwirkendeR]; Scholz, U [MitwirkendeR]; Schäfer, O [MitwirkendeR]; Schöneich, B [MitwirkendeR]; Schöneich, J [MitwirkendeR]; Semerak, M. M [MitwirkendeR]; Semyannikov, V. E [MitwirkendeR]; Shalnov, A. V [MitwirkendeR]; Sharkeevt, Yu. P [MitwirkendeR]; Shlopak, N. V [MitwirkendeR]; Shmyrin, A. J [MitwirkendeR]; Shpilevsky, E. M [MitwirkendeR]; Siairoth, P [MitwirkendeR]; Sieber, N [MitwirkendeR]; Siegel, J [MitwirkendeR]; Sikolenko, V. V [MitwirkendeR]; Sinke, W. C [MitwirkendeR]; Sioshansi, Piran [MitwirkendeR]; Skornyakov, I. V [MitwirkendeR]; Skorupa, W [MitwirkendeR]; Skorupa, Wolfgang [MitwirkendeR]; Slobodich, S. V [MitwirkendeR]; Sobeslavsky, E [MitwirkendeR]; Sobolev, N. A [MitwirkendeR]; Solmi, S [MitwirkendeR]; Soroka, V. I [MitwirkendeR]; Sotnikov, G. V [MitwirkendeR]; Starikova, T. I [MitwirkendeR]; Stary, F [MitwirkendeR]; Stavrov, Vi [MitwirkendeR]; Steiger, B [MitwirkendeR]; Stekolnikov, A. F [MitwirkendeR]; Stepina, N. P [MitwirkendeR]; Stiller, W [MitwirkendeR]; Stock, D [MitwirkendeR]; Stolk, P. A [MitwirkendeR]; Strümpfe, J [MitwirkendeR]; Stuckerfc, I . A [MitwirkendeR]; Subotowicz, M [MitwirkendeR]; Suchaneck, G [MitwirkendeR]; Suvorov, A. V [MitwirkendeR]; Szüce, I. S [MitwirkendeR]; Tamulevičius, S [MitwirkendeR]; Tan, Fan [MitwirkendeR]; Teselkin, A. V [MitwirkendeR]; Thomé, L [MitwirkendeR]; Tija, S. A [MitwirkendeR]; Tillack, B [MitwirkendeR]; Tkach, Yu. V [MitwirkendeR]; Tkachenko, A. S [MitwirkendeR]; Toaasz, Skrabka [MitwirkendeR]; Tokarev, A. S [MitwirkendeR]; Tokarevski, V. V [MitwirkendeR]; Tolonics, J [MitwirkendeR]; Tomasi, A [MitwirkendeR]; Tousset, J [MitwirkendeR]; Tretiakov, V. V [MitwirkendeR]; Trifonov, I [MitwirkendeR]; Troitsky, V. Yu [MitwirkendeR]; Trushin, Yu. V [MitwirkendeR]; Turkin, A. A [MitwirkendeR]; Turos, A [MitwirkendeR]; Tyschenko, I. E [MitwirkendeR]; Uglot, V. V [MitwirkendeR]; Uglov, V. V [MitwirkendeR]; Ulyashin, A. B [MitwirkendeR]; Ulyashin, A. G [MitwirkendeR]; Urmanov, A. R [MitwirkendeR]; Ursu, I [MitwirkendeR]; Uvarov, V. T [MitwirkendeR]; Vajtai, R [MitwirkendeR]; Valakh, M. Ya [MitwirkendeR]; Valentini, A [MitwirkendeR]; Valyaev, A. N [MitwirkendeR]; Vanhellemonta, Jan [MitwirkendeR]; Varbanov, R [MitwirkendeR]; Vasiliev, O [MitwirkendeR]; Vasilyev, A. L [MitwirkendeR]; Velikov, L. V [MitwirkendeR]; Vellmar, S [MitwirkendeR]; Vetter, E [MitwirkendeR]; Vetter, J [MitwirkendeR]; Vinzelberg, H [MitwirkendeR]; Vjatkin, A. P [MitwirkendeR]; Vobonkdv, V. P [MitwirkendeR]; Voelskow, M [MitwirkendeR]; Voevodova, A. V [MitwirkendeR]; Wagner, S [MitwirkendeR]; Weber, B [MitwirkendeR]; Werner, Z [MitwirkendeR]; Wesch, W [MitwirkendeR]; Wieser, E [MitwirkendeR]; Wohlfarth, D [MitwirkendeR]; Wolf, F [MitwirkendeR]; Wolf, R [MitwirkendeR]; Wolff, D [MitwirkendeR]; Wollschlager, K [MitwirkendeR]; Wollschläger, K [MitwirkendeR]; Yaaada, Isao [MitwirkendeR]; Yakubovlch, N. I [MitwirkendeR]; Yanovski, V. P [MitwirkendeR]; Yanovskii, V. P [MitwirkendeR]; Yurchenko, V. A [MitwirkendeR]; Zaitsev, A. M [MitwirkendeR]; Zaroslov, D. Yu [MitwirkendeR]; Zarqba, J [MitwirkendeR]; Zchukova, I. B [MitwirkendeR]; Zemek, J [MitwirkendeR]; Zenkevich, A. V [MitwirkendeR]; Zenkevich, A.V [MitwirkendeR]; Zhukova, S. I [MitwirkendeR]; Zhvavyi, S. P [MitwirkendeR]; Zimmer, K [MitwirkendeR]; Zinovjev, V. A [MitwirkendeR]; Zohukova, T. B [MitwirkendeR]; Zotov, S. D [MitwirkendeR]
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Erschienen:
Berlin; Boston: De Gruyter, [2022]
[Online-Ausgabe] - Erschienen in: Physical Research ; 13
- Ausgabe: Reprint 2021
- Umfang: 1 Online-Ressource (594 p)
- Sprache: Deutsch
- DOI: 10.1515/9783112575666
- ISBN: 9783112575666
- Identifikator:
- Schlagwörter: NON-CLASSIFIABLE
- Art der Reproduktion: [Online-Ausgabe]
- Entstehung:
-
Anmerkungen:
In German
Mode of access: Internet via World Wide Web
-
Beschreibung:
Frontmatter -- CONTENTS -- INVITED PAPERS -- EXCIMER LASER ASSISTED DEPOSITION OF SiO2 -STRUCTURES ON SEMICONDUCTOR SUBSTRATES FROM SILICONORGANIC FILMS -- SYNTHESIS OF COMPOUNDS IN SEMICONDUCTORS BY THE IMPLANTATION OF REACTIVE IONS -- SURFACE MODIFICATION OF SOLID CARBON BY ION IMPLANTATION -- ION BEAN INDUCED EPITAXIAL CRYSTALLIZATION AND PLANAR AMORPHIZATION OF SILICON -- ION BEAM MIXING: AMORPHIZATION, ICOSAHEDRAL PHASE AND FRACTAL PATTERN FORMATION -- NITRIDE SYNTHESIS WITH UV-PULSED LASERS: APPLICATIONS IN MICROELECTRONICS AND METALLURGY -- CHARACTERIZATION OF POLYCRYSTALLINE α-Al2O3 IMPLANTED WITH ZIRCONIUM, COPPER OR IRON -- PLASMA FORMATION AND FILM GROWTH BY LASER-INDUCED DEPOSITION TECHNIQUE (LPVD) -- BANGS PROFILE CALCULATIONS BT DIRECT NUMERICAL SOLUTION OF LINEARIZED BOLTZMAHH TRANSPORT EQUATIONS -- PHASE FORMATION BY ION BEAM MIXING OF METAL SYSTEMS -- RAPID PHASE TRANSITIONS IN SILICON UNDER PULSED-LASER IRRADIATION -- THE CURRENT STATUS OF ION IMPLANTATION PROCESS IN INDUSTRIAL APPLICATIONS -- ION BEAM PROCESSING FdR SILICON-ON-INSULATOR -- THIN FILM HIGH TEMPERATURE SUPERCONDUCTORS -- STIMULATED PHASE TRANSITION IN THE AMORPHOUS SILICON LAYERSINGLE CRYSTAL SILICON SUBSTRATE SYSTEM -- IONIZED CLUSTER BEAM DEPOSITION -RECENT PROGRESS IN RESEARCH AND APPLICATIONS -- SUBMITTED PAPERS -- 1. IMPLANTATION INTO SILICON -- STUDIES OF PRECIPITATE FORMATION IN OXYGEN-IMPLANTED LAYERS OF SILICON -- STRUCTURAL CHARACTERIZATION OF ION-IMPLANTED SILICON LAYERS BY MEANS OF CROSS-SECTIONAL TEM IMAGING -- GENERATION AND ANNEALING OF POINT DEFECTS IN SILICON AFTER HIGH ENERGY IMPLANTATION -- IMPURITY EFFECTS AT AMORPHIZATION OF Al AND Ga DOPED ION-BOMBARDED SILICON -- RAMAN SCATTERING IN HEAVILY DOPED SILICON LAYERS PREPARED WITH LASER ANNEALING -- ELECTRONIC ENERGY LOSS OF IONS IN SILICON AND GERMANIUM -- In situ RECRYSTALLIZATION OF IMPLANTED Si IN A HIGH-VOLTAGE ELECTRON MICROSCOPE -- DEPENDENCE OF Si-SiO2 INTERFACE STATE DENSITY ON ION IMPLANTATION PROCESS AND ITS EXPLOITATION FOR EVALUATING LOW DOSE ION IMPLANTATION -- INVESTIGATION OF THE INFLUENCE OF A HIGH OXYGEN OR NITROGEN CONTAMINATION ON THE ELECTRICAL ACTIVATION AND RESIDUAL DEFECT EVOLUTION OF ARSENIC IMPLANTED SILICON LAYERS -- LONG-RANGE EFFECT IN ION IMPLANTATION OF SILICON AND ITS ASSOCIATION WITH MECHANICAL STRAIN IN CRYSTAL -- ACTIVATION OF PHOSPHORUS IN SURFACE LAYERS OF P+-IMPLANTED SILICON UNDER RF PLASMA TREATMENT -- CRYSTALLOGRAPHIC NATURE OP THE HEXAGONAL SILICON FORMED BY THE HIGH-INTENCITY ION IMPLANTATION -- APPLICATION OF ION IMPLANTATION TO CHEMICAL MICROSENSORS -- PULSE IMPLANTATION DOPING OF SILICON WITH BORON AND PHOSPHORUS -- SIMULATION OF RANGE PROFILES FOB THE BOSON IMPLANTATION INTO SI02/SI AND SI3N4/SIO2/SI TARGETS -- EPITAXIAL LATERAL OVERGROWTH OF AMORPHOUS CVD SILICON FILMS INDUCED BY ION IRRADIATION -- 2. IMPLANTATION AND ANNEALING OF COMPOUND SEMICONDUCTORS -- RAPID THERMAL ANNEALING OF ION IMPLANTED GaAs WITH A GRAPHITE STRIP HEATER -- PHYSICAL AND ELECTROPHYSICAL PROPERTIES OF Ge2x(GaAs)1-x LAYERS INDUCED BY PULSE ELECTRON BEAM ANNEALING -- MODIFICATION OP ZnSe PROPERTIES BY HIGH CURRENT PULSED ELECTRON BEAMS -- AMORPHIZATION OF CD-IMPLANTED GAAS -- Au-Ge/n-GaAs OHMIC CONTACTS BY RAPID THERMAL ANNEALING -- APPARATUS FOR INFRARED ANNEALING OP GaAs IN CONTROLLED ATMOSPHERE -- GaAs-BASED SEMICONDUCTOR COMPOUND SYNTHESIS BY DUAL ION IMPLANTATION -- INVESTIGATION OP SPECIFIC FEATURES OF GALLIUM ARSENIDE IMPLANTATION WITH HIGH IOU DOSES -- MODIFICATION OF THE InP(100) SURFACE BY ION BEAM -- DEFECT OF PROTON BOMBARDMENT INDUCED DETECTS OH THE OPTICAL ABSORPTION OF GaP AND InP -- CHARACTERISTIC PROPERTIES OF HEATING MONOCRYSTALLINE SEMICONDUCTORS BY NANOSECOND LASER PULSES -- 3. TRANSIENT HEAT TREATMENT OF SEMICONDUCTORS -- INVESTIGATION OF THE DYNAMICS OP PULSED LASER AM NEALING OF ION-IMPLANTED SILICON BY THE PICOSECOND TRANSIENT GRATING TECHNIQUE -- LASER INDUCED PHASE TRANSFORMATION IN SEMICONDUCTORS -- HEATING OF SEMICONDUCTORS BY ION BEAMS AND ION-BEAM INDUCED PROCESSES -- 'THE FORMATION 07 S-DOPED SILICON LASERS BY PUISED HEATING RECRYSTALLIZATION -- INTERMEDIATE CRYSTALLIZATION OF ION-IMPLANT ED SILICON DURING NANOSECOND LASER ANNEALING -- ARSENIC SUBLIMATION AND DIFFUSION AT RAPID ELECTRON BEAM ANNEALING OF IMPLANTED SILICON -- INFLUENCE OF IMPLANTED SILICON LAYERS RECRYSTALLIZATION TYPE ON THE MECHANISM OF As DEACTIVATION AT ELECTRON BEAM ANNEALING -- ANISOTROPIC LOCAL MELTING 0? IMPLANTED SILICON BI 0.05 - 15 B DURATION INCOHERENT LI (ST PULSES -- ANNEALING OF THIN ARSENIC IMPLANTED SILICON LAYERS WITH FLASH GALOGEN LAMP AND RF GAS DISCHARGE -- RAPID THERMAL ANNEALING OF PROTON TRASMUTATION DOPED SILICON -- DEFECT PRODUCTION AND ANNEALING IN 11,5 MeV ELECTRON- AND 60Co-Ɣ IRRADIATED NTD-SILICON -- 4. SILICIDES -- INVESTIGATION 07 THE NEW PHASE FORMATION IK NiSi-Si SYSTEM -- PHASE FORMATION UT LASER DEPOSITED TaxSi 1-x FILMS -- LASER DIRECT WRITING OF CONDUCTIVE THIN FILMS FROM GASEOUS PHASES -- FORMATION OF A SILICIDE/NITRIDE LAYER SYSTEM BK N+ IMPLANTATION -- MoSi2 FORMED BY ION IMPLANTATION THROUGH METAL CITIO TECHNIQUE -- QUANTITATIVE BBS ANALYSIS OF SILICIDES AND SILICIDE OXIDES USING BUMP -- REDISTRIBUTION OF B AND As BY RTP AFTER IMPLANTATION INTO TiSi2 ON Si -- 5. IMPLANTATION INTO METALS -- SURFACE RELIEF DEVELOPMENT AND FATIGUE CRACK INITIATION IN IMPLANTED AND NONIMPLANTED METALS -- CHANGE OP MECHANICAL PROPERTIES OF Al-Mg ALLOY UNDER THE ION BEAM IRRADIATION -- STRUCTURAL-PHASE CHARGES IN PE FILMS IRRADIATED SUCCESSIVELY BY NITROGEN AND BORON IONS -- IMPURITY REDISTRIBUTION DURING HIGH TEMPERATURE CREEP Of Sb+-IMPLANTED Al-ALLOY -- TEE BORON IMPLANTATION EFFECT ON STRUCTURAL-PHASE CHANGES IN THE SYST9I Zr-O/Ni PRODUCED BY ATOMIC MIXING -- IMPLANTATION INDUCED TEXTURE -- SYNTHESIS OP COMPOUNDS IN MOLYBDENUM DURING ION IMPLANTATION COMBINED WITH THERMAL AND PULSED ELECTRON ANNEALING -- PRACTICAL APPLICATIONS OF ION IMPLANTATION FOR WEAR PROTECTION -- RESIDUAL STRAIN ANALYSIS OF Ar+ and N2+ IMPLANTED 304 SS -- WEAR RESISTANT COATINGS PRODUCED BY C+ IMPLANTATION -- STRUCTURE-PHASE TRANSPORTATION IN BIMETALLIC SYSTEMS UNDER POWER PULSE INFLUENCE -- STRUCTURAL AND PHASE CHANGES IN NEAR SURFACE LAYERS OP HIGH POWER ION BEAM IRRADIATES HARD ALLOYS -- EFFECT OF DEFECT STRUCTURE ON INCREASED MECHANICAL AND FRICTION PROPERTIES IN HIGH POWER ION BEAM IRRADIATED α-Fe -- AMORTIZATION MECHANISMS IN ION-BOMBARDED METALLIC ALLOYS: EXPERIMENTAL CONFIRMATION OF MODEL PREDICTIONS -- 6. SURFACE MODIFICATION OF METALS AND OTHER MATERIALS -- THE ALLOYING OF Fe AND V BASE WITH W, Nb AND AI BY ION-BEAM MIXING -- SURFACE MODIFICATION OF STEELS BY IRRADIATION OF HIGH CURRENT ELECTRON PULSE WITH NANOSECOND DURATION -- THE PHYSICAL PROPERTIES OF LAYERS IN GLASSES FORMED BY ION MIXING AND IMPLANTATION -- STRESS WAVES AND STRUCTURAL MODIFICATIONS IN METAL AND ALLOYS AT HIGH CURRENT PULSED ELECTRON BEAU IRRADIATION -- MELTING AND MIXING OF FINE METAL LAYERS AFTER EXPOSURE TO LOW - ENERGY HIGH CURRENT ELECTRON BEAM -- EFFECTS OF ION FLOWS ON STRUCTURE AND PROPERTIES OF CERTAIN INORGANIC DIELECTRICS -- ION BEAM MIXING OF Al/Fe BINARY SYSTEMS -- LASER BEAM MODIFICATION OF OPTICAL FILMS -- MIXING OF Cu - Ni SYSTEM BY GAS - METAL ION BEAM -- STRUCTURE TRANSFER AND PHASE CHANGE BY GENERATION OF THIN FILMS BY MEANS OF LASER-INDUCED DEPOSITION METHODS -- EMISSION Of EXCITED MOLECULES DURING ION BOMBARDMENT Of METALS -- CO2 LASER TREATMENT OF ZnO THIN FILM OPTICAL WAVEGUIDES -- 7. MATERIALS DEPOSITION -- RESIDUAL GAS ADSORPTION AT THE FILM-SUBSTRATE INTERFACE DURING ION-BEAM ASSISTED DEPOSITION -- ANNEALING OF SURFACE AND INTERFACE LAYERS CAUSED BY THE PLASMA/SUBSTRATE INTERACTION DURING THE DEPOSITION OF PECVD a-Si:H FILMS -- SCANNING CO2 LASER INDUCED OXIDATION REACTION IN Ti THIN FILM -- ION BEAM ASSISTED DEPOSITION OF Al ON Fe -- LASER LIGHT INDUCED OXIDATION OF METALS AND SEMICONDUCTORS IN EXTERNAL ELECTRIC FIELD -- METHODS INVESTIGATION OP METAL-POLYMER COMPOSITION TEMPERATURE STABILITY INCREASING -- CATHODIC ARC TECHNIQUE - PRESENT STATE AND DEVELOPMENTS -- MODIFICATION OP ADHESION PROPERTIES OP SOLID FILMS BY ION IMPLANTATION -- FILM DEPOSITION BY LASER INDUCED VACUUM ARC EVAPORATION -- 8.
SILICON ON INSULATORS -- HETEROGENEOUS ION SYNTHESIS OP INSULATING LAYERS IN SILICON -- A TWO-DIMENSIONAL MODEL OF SOI STRUCTURES CRYSTALLIZATION BY PULSE NANOSECOND HEATING -- TEMPERATURE DISTRIBUTION IN MELT AND IN GROWING CRYSTAL DURING SILICON-ON-INSULATOR FORMATION BY MILLISECOND HEATING -- SOI STRUCTURES FORMATION BY PULSED HEATING -- FORMATION MECHANISMS AND STRUCTURES OP BURIED Si3N4 LAYERS, PRODUCED BY HIGH-INTENSITY IMPLANTATION AND RAPID THERMAL ANNEALING -- THE HOLE OF ADDITIONAL NITROGEN TRAPS IN ION SYNTHESIS OP SILICON NITRIDE BURIED LAYERS -- SYNTHESIS OF Si3N4 BURIED LAYERS AT LOW DENSITIES OP ION CURRENT AND INDEPENDENT HEATING OF SILICON TARGETS -- OPTIMIZED SO I-PROCESS I NB BY ION BEAM SYNTHESIS OF BURIED SILICON OXYNITRIDE IN SILICON -- STRUCTURAL CHARACTERIZATION OF THICK ZONE-MELTED SOI-LAYERS -- THE INVESTIGATION OF ION BEAM SYNTHESISED SILICON OXYNITRIDES BY IR-SPECTROSCOPY -- 9. DIAGNOSTIC AND ION BEAM EQUIPMENTS -- HIGH DOSE IMPLANTATION OP NITROGEN INTO SILICON: RBS AND NUCLEAR REACTIONS MEASUREMENTS -- HYDROGEN INCORPORATION IN PROTON-IMPLANTED ELEMENTAL AND COMPOUND SEMICONDUCTORS -- FOCUSED-ION-BEAM MODIFIED STRUCTURES OF METAL ON GLASS -- IN SITU XPS AND LEED STUDY OF Si/SiC>2 INTERFACE CHANGES INDUCED BY ArF EXCIMER LASER IRRADIATION -- HfllSSION PROPERTIES OP ALLOY GOLD-BERYLLIUM FIELD IOff SOURCE -- LOW ENERGY ION MICROSCOPE FOR DIAGNOSTICS AND PREPARATION OF MICROELECTRONIC STRUCTURES WITHIN AN MULTIANALYSIS SYSTEM -- DR37* TUBES RESOHAJtt ACCELERATORS VlfH ACCELKBATIHG vxbzs voeusnra voe the IOS iwtjjjtatioh -- QSZMS M M PRORAINO IN THBRHILLY OXIDIZBD POLYSILICON LAYBRS -- PERFORMANCE OF A BRAGG IONIZATION CHAMBER FOR DEPTH PROFILING AND SURFACE ANALYSIS -- A LITHIUM LIQUID METAL ION SOURCE -- PULSE EXPLOSION ION BEAM SOURCE WITH ONE PULSE REGIME FOR SURFACE MODIFICATION OF MATERIALS -- ULTRASONIC SURFACE WAVES FOR STUDYING THE PROPERTIES OF THIN FILMS -- PROBE MEASUREMENTS IN LASER PRODUCED PLASMA -- PLASMATRON ION SOURCE FOR ION IMPLANTATION -- CEMS STUDY ON ALUMINIUM IMPLANTED IRON -- CBMS HKASÜRÖÖSHTS ON ION IMPLANTKD TOOL STEELS -- LOW-FREQUENCY CAPACITANCE-VOLTAGE CHARACTERISTICS OF A SIS STRUCTURE WITH A THIN SILICON SUBSTRATE -- INVESTIGATION OF ARSENIC IMPLANTED SILICON BY OPTICAL REFLECTOMETRY -- HIGH DOSS ION IMPLANTATION SISTEM FOB COMPOUND SEMICONDUCTORS -- AN OXYGEN ION SOURCE OF DUOPLASMATRON TYPE -- 10. HIGH TEMPERATURE SUPERCONDUCTORS -- LASER-INDUCED PLASMA DEPOSITION OF THIN HIGH-TEMPERATURE SUPERCONDUCTING Bi-Sr-Ca-Cu-0 FILMS -- EXPERIMENTAL STUDIES OP EFFECT OF HIGH CURRENT PULSE ELECTRON AND ICARBON ION BEAMS ON THE HIGH TEMPERATURE Y-Ba-Cu-O, Bi-Ca-Sr-Cu-0 SUPERCONDUCTORS -- ENHANCEMENT OF Tc Y-Ba-Cu-O THIN FILMS AFTER PROTON IRRADIATION -- PREPARATION OF SUPERCONDUCTING THIN FILMS BY ION BEAM MIXING -- FORMATION Of HIGH-TEMPERATURE SUPERCONDUCTING Bi-Sr-Ca-Cu-O FILMS BY ION-BEAM SPIKE SPUTTERING -- PROPERTIES Of SUPERCONDUCTING FILMS Bi-Sr-Ca-Cu-0 IMPLANTED BY OXIGEN IONS -- FORMATION OF THIN SUPERCONDUCTING FILMS BY Cu+ IMPLANTATION -- SUPERCONDUCTING TBAzCUsOz FILMS OR SILICON PREPARED BY LPVD -- 11. FUNDAMENTALS -- COMPUTATION OF THE DISTRIBUTION OF RADIATION AND TEMPERATURE DURING RAPID THERMAL PROCESSING -- DEFECT PROFILES AND COMPOSITION DISTURBANCES INDUCED BY ION IMPLANTATION -- ENERGY BALANCE IN NONEQUILIBRIUM GRADIENT-ZONE CRYSTALLIZATION IN A SEMICONDUCTOR -- A VACANCY DIFFUSION MODEL OF ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION -- PECULIAR FEATURES OF DEFECT PRODUCTION DUE TO HIGH ENERGY ION IMPLANTATION -- COMPUTER SIMULATION OF ION MOTION IN MULTILAYERED HETEROSTRUCTURES -- THE ROLE OF ABSOLUTE AND CONSTITUTIONAL SUPERCOOLING IN ZONE - MELTING - RECRYSTALLIZATION OF SILICON FILMS -- TIME EVOLUTION OF THE ELECTRON OAS IN A LASER-INDUCED PLASMA - A THEORETICAL STUDY -- THE INFLUENCE 01* THE LIGHT POLARIZATION ON RESONANT LASER-INDUCED DIFFUSION IN CRYSTALS -- RESONANT LASER-INDUCED DIFFUSION OF OXYGEN IN SILICON -- IMPLANTATION EFFECTS OF LASER EVAPORATED PARTICLES -- AN "INSTRUMENT FUNCTION" OF SECONDARY ION EMISSION -- ENERGY AND ANGULAR DISTRIBUTIONS OF IONS BACKSCATTERED FROM THE SIDEMALLS DURING THE IMPLANTATION INTO DEEP TRENCHES -- THE MECHANISMS OP ATOMIC MIGRATIONS IN IMPLANTED FILMS -- MODELING OF THE NITROGEN HIGH DOSE IMPLANTATION INTO SILICON FOR BURIED INSULATING LAYERS -- NUMERICAL SIMULATION OF CHARGED-PARTICLE BEAMS DYNAMICS IN IONIC-OPTICAL SYSTEMS WITH PLASMA EMITTERS OF TECHNOLOGICAL ION SOURCES -- ON THE MECHANISM OF ION-STIMULATED CRYSTALLIZATION -- DECOMPOSITION OF SOLID SOLUTIONS UNDER ION IRRADIATION -- PHASE DIAGRAMS OF BINARY ALLOYS UNDER IRRADIATION -- THE ENERGY ACCUMULATION IN SOLIDS IRRADIATED BY HIGH POWER BEAMS OP CHARGED PARTICLES -- NUCLEATION A? VARYING TEMPERATURES -- MODELLING OP PHASE TRANSFORMATIONS IN AMORPHOUS SILICON BY NANOSECOND PULSED-LASER IRRADIATION -- ELASTIC WAVE GENERATION IN THE CONTINUUM BY A TUBULAR BEAM OP CHARGED PARTICLES -- NUMERICAL CALCULATION OP THERMAL PROCESSES IN LASER PROCESSING OP SEMICONDUCTOR MATERIALS -- A MODEL OP DOPAND REDISTRIBUTION UNDER LASER RECRYSTALLIZATION -- MIS-Transistors in thin polycrystalline silicon and applications in liquid crystal displays and three dimensional integrated circuits -- LATE PAPER -- A MIXED BALLISTIC AND THERMODYNAMIC DESCRIPTION OF ION-BEAM MIXING -- Author -- Physical Research - Zugangsstatus: Eingeschränkter Zugang