• Medientyp: E-Book
  • Titel: Characterizing Heavy Ions-Implanted Zr/Nb : Structure and Mechanical Properties
  • Beteiligte: Daghbouj, N. [VerfasserIn]; Sen, H. S. [VerfasserIn]; Cizek, Jakub [VerfasserIn]; Lorinčík, Jan [VerfasserIn]; Karlik, Miroslav [VerfasserIn]; Callisti, M. [VerfasserIn]; Čech, Jaroslav [VerfasserIn]; Krsjak, Vladimir [VerfasserIn]; Li, Bingsheng [VerfasserIn]; Krsjak, Vladimir [VerfasserIn]; Liedke, Maik O. [VerfasserIn]; Butterilng, Maciej [VerfasserIn]; Wagner, Andreas [VerfasserIn]; Polcar, Tomas [VerfasserIn]
  • Erschienen: [S.l.]: SSRN, [2022]
  • Umfang: 1 Online-Ressource (32 p)
  • Sprache: Englisch
  • DOI: 10.2139/ssrn.4014096
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  • Beschreibung: In this work, the radiation responses of Zr/Nb nanostructured metallic multilayers are studied. The nanostructures with different layer thicknesses were deposited on Si (1 0 0) substrate by using magnetron sputtering and are subjected to heavy-ion irradiation with different fluences. Nanoindentation, XRD, SIMS, and Variable Energy Positron Annihilation Spectroscopy (VEPAS) techniques were used to study the changes in the hardness of the structures as well as the type and distribution of defects, and strain within the material as a function of damage. Our results suggest that the irradiation hardening is independent of the type of implanted ions, and its magnitude decreases with decreasing individual layer thickness indicating that the number of interfaces has a direct effect on the radiation tolerance enhancement. For thin layers, a transition from hardening to softening occurs at high fluence, and a saturation point is reached in thick layers. The as-deposited thin multilayers presented significantly higher atomic-scale disorder which increases with ion irradiation compared to the thick multilayers. VEPAS reveals the vacancy defects before and after irradiation that contribute to the presented strain. Thin nanostructured Zr/Nb multilayered structures possess excellent radiation resistance due to the high density of interfaces that act as sinks for radiation-induced defects
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