EPM 87. Energy Pulse and Particle Beam Modification of Materials: International Conference held September 7—11, 1987 Dresden, G.D.R

Medientyp: E-Book

Titel: EPM 87. Energy Pulse and Particle Beam Modification of Materials : International Conference held September 7—11, 1987 Dresden, G.D.R

Enthält: Frontmatter
CONTENTS
1. Invited papers
EPM'87 - STATE OF THE ART
ACCELERATION OF MICROPARTICLES
STUDY OF SILICON IMPLANTED BY HIGH DOSE OP IRON GROUP TRANSITION METALS
MODIFICATIONS INDUCED BY PULSED LASER IRRADIATION OF METALLIC SURFACES IN PRESENCE OF A BREAKDOWN PLASMA IN THE AMBIENT GAS
IMPURITY EFFECTS AT ION BEAM INDUCED DISORDERING OF HIGHLY DOPED SILICON
DIRECTIONS OF DEVELOPMENT OF ION BEAM APPLICATIONS TO MODIFICATIONS OF TOOL PROPERTIES IN POLAND
COMPARATIVE INVESTIGATION OF PHASE FORMATION IN Fe, A1 AND Ti AFTER NITROGEN ION IMPLANTATION
MECHANISMS OP STRUCTURE FORMATION IN LASER PULSE VAPOUR DEPOSITION
FUNDAMENTAL ASPECTS OP THERMALLY INDUCED SOI LAYER FORMATION
PULSED ION IMPLANTATION OF SILICON WITH SELENIUM
RAPID THERMAL PROCESSING FOR VLSI APPLICATION
SILICON ON INSULATOR STRUCTURES FOR VLSI FORMED BY ION BEAM SYNTHESIS
EFFECTS OP IMPURITY-DEFECT INTERACTIONS ON THE LATTICE SITE OCCUPATION OF IMPURITIES IN ION IMPLANTED METALS
THE PROCESS OF COMPOUNDS FORMATION BY ION IMPLANTATION
MICROSTRUCTURAL AND TRIBOLOGICAL STUDY OF IRON AND STEELS ION IMPLANTED WITH NITROGEN
ELECTRON BEAU AND UV-LASER MICROSTRUCTURE FORMATION BY DECOMPOSITION 0? SOLID METAL RESINATE FILMS
APPLICATIONS OF MICROFOCUSSED ION BEAMS
STRUCTURE OF CRYSTAL FILMS PREPARED BY VAPOR DEPOSITION AND SIMULTANEOUS ION BOMBARDMENT
MULTILAYER STRUCTURE CREATION AND CRYSTAL SURFACE MODIFICATION BY LASER-PRODUCED PLASMAS
2. Implantation into silicon
RANGE PROFILE CALCULATIONS FOR THE HIGH ENERGY IMPLANTATION OF PHOSPHORUS INTO SILICON
DEFECT FLUX EFFECTS DURING ION IMPLANTATION
IMPURITY REDISTRIBUTION IN SILICON DUE TO ION BOMBARDMENT
6 MeV Ni HIGH DOSE IMPLANTATION INTO SILICON
ION BEAM INDUCED EPITAXIAL CRYSTALLIZATION OF DOPED AMORPHOUS SILICON LAYERS
HIGH ENERGY IMPLANTATION AND ANNEALING OF PHOSPHORUS IN SILICON
DEPTH PROFILES OF RADIATION DAMAGE AFTER HIGH ENERGY SELF-IRRADIATION OF SILICON FROM OPTICAL REFLECTIVITY MEASUREMENTS ON BEVELLED SAMPLES
JONDTRON - PI HIGH INTENSITY ION PULSE PRODUCING HflCHINE FDR MATERIAL PROCESSING
A HOVEL ETCH STOP SYSTEM BASED ON HIGH DOSE NITROGEN IMPLANTATION FOR THIN CRYSTALLINE SILICON LAYER FORMATION
EFFECT OF HIGH ENERGY HYDROGEN BEAM INTENSITY ON DEFECT FORMATION IN SILICON
3. Implantation and annealing of compound semiconductor
RAPID THERMAL ANNEALING OF ION IMPLANTED GaAs BY MEANS OF A GRAPHITE STRIP HEATER
SILICON AND CHROMIUM DISTRIBUTION IN IMPLANTED AND SHORT TIME ANNEALED GaAs
INVESTIGATION OF LOW-TEMPERATURE RECRYSTALLIZATION OF ION IMPLANTED AMORPHOUS GaAs LAYERS
INVESTIGATION OF THE TEMPERATURE DEPENDENCE OF THE DECHANNELING III WEAKLY DAMAGED GaAs
Short time threshold for electrical activation of implanted and annealed GaAs
ELECTRICAL PROPERTIES OF RAPID THERMAL ANNEALED IMPLANTED GaAS
FORMATION OF AMORPHOUS GaP LAYERS BY ION IMPLANTATION AT LOW TEMPERATURE
RESIDUAL DEFECTS IN IMPLANTED GaAs AFTER RAPID THERMAL ANNEALING WITH INCOHERENT LIGHT
HALOGEN LAMP ANNEALING OF Au AND AuGe CONTACTS TO GaAs
4. Implantation into metals
FORMATION AND STRUCTURE OF IMPLANTATION-INDUCED AMORPHOUS ALLOYS
STRUCTURAL AND PHASE TRANSFORMATION IN PULSED ION IMPLANTATION OF BCC METALS
STRUCTURAL MODIFICATIONS OF NITROGEN IMPLANTED HIGH-SPEED STEEL
WEAR PROPERTIES OF HIGH-SPEED STEEL IMPLANTED WITH NITROGEN AT VARIOUS THERMAL CONDITIONS
TRIBOLOGICAL PROPERTIES OF ION IMPLANTED Fe-Cr STEELS
MICROSTRUCTURE OF TI-IMPLANTED FE
DOSE AND TEMPERATURE DEPENDENCE OE ARSENIC REDISTRIBUTION IN ION IMPLANTED NICKEL
INFLUENCE OF TEMPERATURE ON NITROGEN IMPLANTED IRON
CONVERSION ELECTRON MOSSBAUER SPECTROSCOPIC STUDIES OP IRON IMPLANTED WITH BORON, CARBON AND PHOSPHORUS
WEAR BEHAVIOUR OF ION IMPLANTED STEELS AND HARD METALS
HEAT PRODUCTION DURING ION IMPLANTATION INTO METALS AND ALLOYS
COMPOSITION DEPENDENCE OF MAGNETIZATION OF ION IMPLANTED COBALT LAYERS
AMORPHIZATION PROCESSES STUDIED BY HIGH DOSE ION IMPLANTATION INTO METALS
Implantation effects on microcrack initation in fatigued metals
STRUCTURAL MODIFICATIONS OP Hi EVAPORATED THIN FILMS IRRADIATED WITH P+ IONS
5. Transient heat treatment of semiconductors
ANNEALING OF LASER INDUCED DEFECTS IN SILICON
ORIGIN OP THE DEFECTS WITH DEEP LEVELS IN PULSED ANNEALED SILICON
ANNEALING OP SILICON BY INCOHERENT LIGHT PULSES OP 50 ms -10 s DURATIONS
CONTINUOUS ELECTRON BEAM ANNEALING OP ION-IMPLANTED SILICON
IN SITU ANNEALING OP ION-IMPLANTED SILICON IN A HIGH-VOLTAGE ELECTRON MICROSCOPE (HVEM)
Laser beam induced microdefects in silicon detected by SEM and TEM
RAPID THERMAL ANNEALING AND PROPERTIES OF B AND P IMPLANTED SILICON
THE EFFECT OF OXYGEN ON ELECTRICAL ACTIVATION AND DIFFUSION OF As IN Si BY RTA
INFLUENCE OF ELECTRON-BEAM AND HALOGEN LAMP ANNEALING ON THE ELECTRICAL PROPERTIES OF MOS STRUCTURES
ELECTRICAL ACTIVATION OF BORON IMPLANTED SILICON DURING THE EARLY STAGE OF RAPID THERMAL ANNEALING
NONEQUILIBRIUM IMPURITY SEGREGATION IN PHOSPHORUS IMPLANTED POLYCRYSTALIINE SILICON SUBJECTED TO TRANSIENT HEATING
TIME DEPENDENCE OP BORON DIFFUSIVITY DURING PULSE ANNEALING OP ION-IMPLANTED SILICON
COMPARATIVE ANALYSIS BY THE X-RAY DIFFRACTION METHOD 0? PULSE AND THERMAL ANNEALED ION-IMPLANTED SILICON
INTERNAL MECHANICAL STRESS AND ELECTRICAL ACTIVATION OF IMPURITY IN ION—IMPLANTED Si DURING PULSE ANNEALING
THE 13 MeV ELECTRON PULSE INDUCED MODIFICATION OF DYNAMIC PARAMETERS OF SILICON DIODES,THYRYSTORS AND TRANSISTORS
ACTIVATION OF SHALLOW As+ IMPLANTS IN (100) SILICON BY INCOHERENT LIGHT ANNEALING
ELECTRON BEAM HEAT SOURCE OF MODIFIED POWER DENSITY DISTRIBUTION
NANOSECOND POISE RECRISTALLIZATION Of HIGHLY DOSED SILICON LAYERS
THERMAL STRESSES IN SILICON WAFER DURING PULSED PLASH ANNEALING
MULTIPLE PULSE IMPLANTATION DOPED LAYERS IN SILICON
PULSE IMPLANTATION DOPING - APPLICATION FOR PHOTOVOLTAIC JUNCTION FORMATION
EFFECT OF OXYGEN RECOILS ON THE DEFECT ANNEALING IN Si DURING RTA
ANALYTICAL EVALUATION OF THE IMPURITY REDISTRIBUTION DURING POST-IMPLANTATION LASER ANNEALING
RAPID THERMAL ANNEALING : TEMPERATURE AND ACTIVATION UNIFORMITIES - COOLING SPEEDS AND MINIMUM DIFFUSION LENGTHS
6. Formation of silicides
THE INFLUENCE OF IMPLANTATION PARAMETERS AND ANNEALING CONDITIONS ON THE FORMATION AND PROPERTIES OF MoSi2 LAYERS
LIQUID PHASE GROWTH OF FeSi2
LIQUID PHASE GROWTH OF NiSi2 AND CoSi2
FORMATION OP EPITAXIAL NiSi2 LAYER BY HIGH DOSE ION IMPLANTATION AND RAPID THERMAL ANNEALING
REDISTRIBUTION OP IMPLANTED DOPANTS IN MoSi2/POLY-Si STRUCTURES DURING SILICIDATION TEMPERING
R.B.S. STUDIES OF WSi2 FORMATION FROM Si/W/Si LAYERS BY W + ION MIXING FOLLOWED BY ANNEALING WHEN THE W FILMS CONTAIN OXYGEN
ELECTRICAL RESISTIVITY OP SILICON IMPLANTED BY HIGH DOSE Cr+ IONS AFTER LASER ANNEALING
CRYSTALLINE AND AMORPHOUS Cr-Si ALLOY FORMATION WITH ENERGETIC PULSES
7. Ion beam assisted deposition and ion beam mixing
COMPUTER SIMULATION OP ION BEAM MIXING OF COBALT ON SILICON
I-V AND C-V STUDIES OF ION MIXED Au/GaAs (100) CONTACTS - EFFECT OF THE ANNEALING
ION MIXING IN GLASSES
ON THE FORMATION OF CARBON FILMS BY ION BEAM ASSISTED METHOD
ION MIXING IN Cu/Au MULTILAYERED THIN FILMS
A MODEL OP SIMULTANEOUS QR ALTERNATING ION IMPLANTATION IN FILMS AND COATINGS BEING DEPOSITED
INFLUENCE OF HIGH ENERGY PARTICLES ON THIN FILM FORMATION BY LPVD
MODIFICATION OF SURFACE PROPERTIES OF TOOL STEEL BY ION BEAM MIXING
Computer simulation and and experimental measurements of recoil implantation of gold into silicon
8.
Deposition, modification and structurization
ION BEAM MODIFICATION OF THIN POLYIMIDE FILMS
STUDY OF ELECTRICAL AND OPTICAL PROPERTIES OF FUSED QUARTZ IMPLANTED BY HIGH DOSE Cr+- AND Fe+-IONS
ION BOMBARDMENT INDUCED MODIFICATION OF La6
Pyrolitic laser deposition of tungsten
PULSED AND cw LASER SYNTHESIS OF III-VI AND IV-VI COMPOUND FILMS
MODIFICATION OP ELECTROCHROMIC W03 FILMS BY NANOSECOND LASER PULSES
HARDENING OF CEMENTED CARBIDES BY LASER PULSE IRRADIATION
TRANSIENT NUCLEATION IN LASER PLASMA DEPOSITION OF THIN FILMS
THEORETICAL MODEL OF LASER GENERATED PLASMA FOR THIN FILM DEPOSITION
EXPERIMENTAL SET-UP FOB LASER PULSE VAPOUR DEPOSITION IN UHV
CHARACTERIZATION OF THE LPVD-PROCESS BY MICHELSON INTERFEROMETRY
ON DEFECTS AND STRESSES IN THIN FILMS
ESR STUDY OF SiN FILMS PREPARED BY ECR PLASMA CVD METHOD
9. Silicon on insulator (SOI)
ELECTRICAL PROPERTIES OF SILICON FILMS ON Si02 FORMED BY EXPLOSIVE CRYSTALLIZATION
FORMATION OF BURIED SILICON NITRIDE AND OXYNITRIDE LAYERS IN SILICON BY ION BEAM SYNTHESIS
MODELING OF 18O TRACER STUDIES OF THE OXYGEN REDISTRIBUTION DURING FORMATION OF Si02 LAYERS BY HIGH DOSE IMPLANTATION
IMPROVED MODELING OF OXYGEN DEPTH PROFILES IN HIGH DOSE OXYGEN-IMPLANTED SILICON
THEORETICAL INVESTIGATION OF THERMALLY ACTIVATED AND ION BEAM INDUCED LATERAL SOLID-PHASE EPITAXY
MATHEMATICAL MODELLING OF THE CAPACITANCE CHARACTERISTICS AND THE THRESHOLD VOLTAGE OF A MOS STRUCTURE ON A THIN SILICON SUBSTRATE
INFLUENCE OF THERMAL GRADIENT ON THE RECRYSTALLIZATION OF THICK POLYCRYSTALLINE SILICON ON SIO2
ELECTRICAL CHARACTERIZATION OP THICK SOI-FILMS
A MODEL FOR NITROGEN REDISTRIBUTION PROCESSES IN HIGH DOSE NITROGEN-IMPLANTED SILICON
PHYSICAL MODEL, PROPERTIES AND OPTOELECTRONICAL APPLICATION OF HYDROGEN IMPLANTED SOI MOSFET'S
PULSE LASER INDUCED IGNITION OF EXPLOSIVE LIQUID-PHASE CRYSTALLIZATION OF AMORPHOUS SILICON
COMPUTER SIMULATION OF GRAIN BOUNDARY CONFINEMENT AT ZONE MELTING RECRYSTALLIZATION
STUDY OF STRUCTURE FORMATION BY THE MELT INSTABILITY OF SILICON AT LIGHT HEATING
High Throughput CO2 laser Recrystallization for 3D integrated Devices
FORMATION OP BURIED NITRIDE LAYERS BELOW NiSi2 BY ION IMPLANTATION
10. Diagnostics and ion microfocus beam
EMISSION CHARACTERISTICS OF EUTECTIC ALLOY LIQUID METAL ION SOURCES FOR FOCUSED ION BEAM SYSTEMS
CHARACTERISTICS OF AN ExB MASS SEPARATOR FOR FOCUSED ION BEAM SYSTEMS
CHANNELING EFFECTS AT LOW-ENERGY ION IMPLANTATION
POSSIBILITIES OF THE TDPAC METHOD FOR THE DIAGNOSIS OF RADIATION DAMAGE AND ANNEALING PROCESS IN IMPLANTED SEMICONDUCTORS
QUADRUPOLE-SIMS-MEASUREMENTS OP IMPURITIES IN SiO2/Si-STRUCTURES
HIGH TEMPERATURE ION SOURCE FOR IMPLANTATION PURPOSES
A HEW CONSTRUCTION OF ION IMPLANTER AT THE SLOVAK TECHNICAL UNIVERSITY
THERMAL PROCESSES UNDER INTERACTION OP FOCUSED ION BEAMS WITH SEMICONDUCTOR CRYSTALS
MASS AND ENERGY DISTRIBUTION MEASUREMENTS OF AuSi-LIQUID-METAL-ION SOURCE
CLUSTER IONS IN LASER MASS SPECTRA OF WO3/C TARGETS
ANALYSIS OF Ar ION BEAM ETCHING (IBE) INDUCED SURFACE DAMAGE OF GaAs BY MEANS OF 4+CU ADSORPTION / AUTORADIOGRAPHY AND RBS / CHANNELING
A MaV ION PROBE AT TU PRAGUE
11. Fundamentals
COMPUTER STUDIES OF THE STATISTICAL DISTRIBUTION FUNCTIONS OF PARTICLES MOVING IN COLLISION CASCADES
MONTE CARLO CALCULATIONS OF HIGH DOSE ION BOMBARDMENT ACCOUNTING FOR DYNAMIC TARGET MODIFICATION
ENERGY LOSS OF CHANNELED HELIUM IONS BY MONTE CARLO SIMULATION
TRANSMISSION SPUTTERING OF THIN GOLD FILMS: A COMPUTER SIMULATION STUDY
MODELLING OP NONEQUILIBRIUM PHASE TRANSITIONS INITIATED BY SHORT LASER PULSES IN SILICON
INTERMEDIATE CRYSTALLIZATION OP AMORPHOUS SILICON LAYERS AT NANOSECOND FUISED LASER ANNEALING
INVESTIGATIONS OB THE AMORPHOUS/CRYSTALLINE PHASE TRANSITION IN IONIMPLANTED SILICON BY MEANS OP CROSS-SECTIONAL TEM IMAGING
NUMERICAL MODELLING OF SILICON SAMPLE MELTING BY HIGH-INTENSITY ION-BEAM PULSE
SIMULATION OP NANOSECOND LASER ANNEALING OP SILICON ALLOWING FOR CRYSTALLIZATION OP SUPERCOOLED MELT
PHASE TRANSITIONS INDUCED BY NANOSECOND LASER HEATING OP AMORPHIZED SILICON
THEORETICAL TREATMENT OF THE IGNITION OF EXPLOSIVE LIQUID PHASE CRYSTALLIZATION PROCESSES
MODELLING OF THE FACETED GROWTH DURING LATERAL EXPLOSIVE CRYSTALLIZATION OF AMORPHOUS SILICON
LASER PULSE-INDUCED PHASE TRANSFORMATIONS VISUALIZED BY NANOSECOND-EXPOSURE ELECTRON MICROSCOPY
THERMAL PULSED ANNEALINS WITH ACCOUNT OF PLASMA EFFECT
AMORPHOUS SILICON MELTING TEMPERATURE VERSUS SELF-SUSTAINING CRYSTALLIZATION KINETICS
12. Miscellaneous
LONGITUDINAL-SPREAD CHARACTERISTICS OF RADIATION DEFECTS IN TELLURIUM-IMPLANTED GERMANIUM
ANODIC OXIDATION OF Si AS A LOW TEMPERATURE OXIDATION METHOD FOR PASSIVATION OF SEMICONDUCTOR DEVICES
LUMINESCENCE OP CUBIC BORON NITRIDE IMPLANTED WITH HIGH ENERGY IONS
LUMINESCENCE OP DIAMOND IMPLANTED WITH HIGH ENERGY CARBON IONS
MODIFICATION OF SOLIDS DUE TO THE EXPOSURE TO HIGH TEMPERATURE PLASMAS
STRUCTURE AND PROPERTIES OF NANOMETER-SIZED SOLIDS
13. Author Index
Backmatter

Erschienen: Berlin; Boston: De Gruyter, [2022]

Ausgabe: Reprint 2022

Umfang: 1 Online-Ressource (598 p.); With 470 Figures and 44 Tables

Sprache: Englisch

DOI: 10.1515/9783112611203

ISBN: 9783112611203

Identifikator:

Schlagwörter: NON-CLASSIFIABLE

Reproduktionsnotiz: Issued also in print

Entstehung:

Anmerkungen: In English

Zugangsstatus: Eingeschränkter Zugang | Informationen zu lizenzierten elektronischen Ressourcen der SLUB

EPM 87. Energy Pulse and Particle Beam Modification of Materials - [Reprint 2022]

Merkliste

Nur in Feld suchen:

Zuletzt gesuchte Begriffe: