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Marquardt, Richard [Verfasser:in]; Zahari, Finn [Verfasser:in]; Carstensen, Jürgen [Verfasser:in]; Popkirov, George [Verfasser:in]; Gronenberg, Ole [Verfasser:in]; Kolhatkar, Gitanjali [Verfasser:in]; Kohlstedt, Hermann [Verfasser:in]; Ziegler, Martin [Verfasser:in]

Impedance spectroscopy on hafnium oxide-based memristive devices

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  • Medientyp: E-Artikel
  • Titel: Impedance spectroscopy on hafnium oxide-based memristive devices
  • Beteiligte: Marquardt, Richard [Verfasser:in]; Zahari, Finn [Verfasser:in]; Carstensen, Jürgen [Verfasser:in]; Popkirov, George [Verfasser:in]; Gronenberg, Ole [Verfasser:in]; Kolhatkar, Gitanjali [Verfasser:in]; Kohlstedt, Hermann [Verfasser:in]; Ziegler, Martin [Verfasser:in]
  • Erschienen: 2023
  • Erschienen in: Advanced electronic materials ; 9(2023), 6, Artikel-ID 2201227, Seite 1-14
  • Sprache: Englisch
  • DOI: 10.1002/aelm.202201227
  • Identifikator:
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  • Beschreibung: Memristive devices for neuromorphic computing have been attracting ever growing attention over the last couple of years. In neuromorphic electronics, memristive devices with multi-level resistance states are required to accurately reproduce synaptic weights. Here, a memristive device based on a multilayer oxide system (Nb/NbOx/Al2O3/HfO2/Au), which features a filamentary-free, homogenous interfacial resistive switching mechanism, is investigated. To gain a deeper insight into the switching mechanism, impedance spectroscopy (ImpSpec), X-ray photoelectron spectroscopy (XPS), and transmission electron microscopy (TEM) are exploited. While this work focuses on the analysis of impedance and current-voltage characteristics, XPS and TEM investigations can be found in a companion paper (Zahari et al.). In the course of this investigation, potentiodynamic impedance spectroscopy (PD-ImpSpec) and time resolved impedance spectroscopy (TR-ImpSpec) in combination with transient analysis are used. Evidence is presented of switching kinetics at voltages above 2.1 V directly related to changes in Schottky barrier resistance. These switching kinetics can in turn be interpreted by the charging and discharging of double positively charged oxygen vacancies VO+2$\bf V_\bf O^\bm + 2$ ≈ 0.9 eV. The results of the impedance analysis are translated into a more general model for memristive devices to map the physical processes during switching.
  • Zugangsstatus: Freier Zugang