Beschreibung:
Predictive simulation of semiconductor processingenables researchers and developersto extend the scaling range of semiconductor devices beyond the parameter range of empirical research. It requires a thorough understanding of the basic mechanisms employed in device fabrication, such as diffusion, ion implantation, epitaxy, defect formation and annealing, and contamination. This book presents an in-depth discussion of our current understanding of key processes and identifies areas that require further work in order to achieve the goal of a comprehensive, predictive process simulation tool. TOC:Transistors and Atoms.- Atomistic Simulations of Processes at Surfaces.- Atomistic Simulations in Materials Processing.- Atomistic Simulation of Decanano MOSFETs.- Modeling and Simulation of Heterojunction Bipolar Transistors.- Gate Oxide Reliability: Physical and Computational Models.- High-K Dielectrics: The Example of Pr2O3.- Atomistic Simulation of Si3N4 CVD from Dichlorosilane and NH3.- Interconnects and Propagation of High Frequency Signals.- Modeling of Electromigration in Interconnects.- Predictive Modeling of Transition Metal Gathering: Applications and Materials Science Challenges