Parasitic Absorption in Polycrystalline Si-layers for Carrier-selective Front Junctions

Medientyp: E-Artikel; Sonstige Veröffentlichung

Titel: Parasitic Absorption in Polycrystalline Si-layers for Carrier-selective Front Junctions

Beteiligte: Reiter, Sina [VerfasserIn]; Koper, Nico [VerfasserIn]; Reineke-Koch, Rolf [VerfasserIn]; Larionova, Yevgeniya [VerfasserIn]; Turcu, Mircea [VerfasserIn]; Krügener, Jan [VerfasserIn]; Tetzlaff, Dominic [VerfasserIn]; Wietler, Tobias [VerfasserIn]; Höhne, Uwe [VerfasserIn]; Kähler, Jan-Dirk [VerfasserIn]; Brendel, Rolf [VerfasserIn]; Peibst, Robby [VerfasserIn]

Erschienen: London : Elsevier Ltd., 2016

Sprache: Englisch

DOI: https://doi.org/10.15488/1194; https://doi.org/10.1016/j.egypro.2016.07.057

ISSN: 1876-6102

Schlagwörter: Crystalline materials ; optical properties ; Semiconductor doping ; Spectroscopic ellipsometry ; Amorphous silicon ; Crystalline silicons ; Polycrystalline silicon ; Polysilicon ; Polycrystalline silicon (poly-Si) ; front junction ; Polycrystalline materials ; Variable angle spectroscopic ellipsometry ; Refractive index ; Complex refractive index ; Ray tracing simulation ; Amorphous materials ; Silicon ; Polycrystalline-Si ; Konferenzschrift ; ray tracing simulations ; Free carrier absorption

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Beschreibung: We investigate the optical properties of n- and p-type polycrystalline silicon (poly-Si) layers. We determine the optical constants n and k of the complex refractive index of polycrystalline silicon by using variable-angle spectroscopic ellipsometry. Moreover, we investigate the effect of different doping levels in the poly-Si on free carrier absorption (FCA). Thereby, we demonstrate that the FCA in poly-Si can be described by a model developed for crystalline silicon (c-Si) at a first approximation. The optical properties of hydrogenated amorphous silicon layers (a-Si:H) are also investigated as a reference. With ray tracing simulations the absorption losses of poly-Si and of the a-Si:H layers are quantified with respect to the film thickness. Based on this approach we find that the short-circuit current density losses due to parasitic absorption of poly-Si layers are significantly lower when compared to a-Si:H layers of the same thickness. For example the short-circuit current density loss due to a 20 nm thick p-type poly-Si layer is around 1.1 mA/cm2, whereas a 20 nm thick p-type a-Si:H layer leads to a loss of around 3.5 mA/cm2. ; BMWi/0325702

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