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Beschreibung:
The design of modern semiconductor devices requires the numerical simulation of basic fabrication steps. We investigate some electro-reaction-diffusion equations which describe the redistribution of charged dopants and point defects in semiconductor structures and which the simulations should be based on. Especially, we are interested in pair diffusion models. We present new results concerned with the existence of steady states and with the asymptotic behaviour of solutions which are obtained by estimates of the corresponding free energy and dissipation functionals.