Steglich, P.
[Verfasser:in];
Bondarenko, S.
[Verfasser:in];
Mai, C.
[Verfasser:in];
Paul, Martin
[Verfasser:in];
Weller, Michael G.
[Verfasser:in];
Mai, A.
[Verfasser:in]
CMOS-Compatible Silicon Photonic Sensor for Refractive Index Sensing Using Local Back-Side Release
Sie können Bookmarks mittels Listen verwalten, loggen Sie sich dafür bitte in Ihr SLUB Benutzerkonto ein.
Medientyp:
E-Artikel
Titel:
CMOS-Compatible Silicon Photonic Sensor for Refractive Index Sensing Using Local Back-Side Release
Beteiligte:
Steglich, P.
[Verfasser:in];
Bondarenko, S.
[Verfasser:in];
Mai, C.
[Verfasser:in];
Paul, Martin
[Verfasser:in];
Weller, Michael G.
[Verfasser:in];
Mai, A.
[Verfasser:in]
Erschienen:
BAM-Publica - Publikationsserver der Bundesanstalt für Materialforschung und -prüfung (BAM), 2020
Sprache:
Englisch
DOI:
https://doi.org/10.1109/LPT.2020.3019114
Entstehung:
Anmerkungen:
Diese Datenquelle enthält auch Bestandsnachweise, die nicht zu einem Volltext führen.
Beschreibung:
Silicon photonic sensors are promising candidates for lab-on-a-chip solutions with versatile applications and scalable production prospects using complementary metal-oxide semiconductor (CMOS) fabrication methods. However, the widespread use has been hindered because the sensing area adjoins optical and electrical components making packaging and sensor handling challenging. In this work, a local back-side release of the photonic sensor is employed, enabling a separation of the sensing area from the rest of the chip. This approach allows preserving the compatibility of photonic integrated circuits in the front-end of line and metal interconnects in the back-end of line. The sensor is based on a micro-ring resonator and is fabricated on wafer-level using a CMOS technology. We revealed a ring resonator sensitivity for homogeneous sensing of 106 nm/RIU.