Korte, S.
[VerfasserIn];
Romanyuk, K.
[VerfasserIn];
Schnitzler, B.
[VerfasserIn];
Cherepanov, V.
[VerfasserIn];
Voigtländer, B.
[VerfasserIn];
Filimonov, S.N.
[VerfasserIn]
Selective Adsorption of C60 on Ge/Si Nanostructures
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Medientyp:
E-Artikel
Titel:
Selective Adsorption of C60 on Ge/Si Nanostructures
Beteiligte:
Korte, S.
[VerfasserIn];
Romanyuk, K.
[VerfasserIn];
Schnitzler, B.
[VerfasserIn];
Cherepanov, V.
[VerfasserIn];
Voigtländer, B.
[VerfasserIn];
Filimonov, S.N.
[VerfasserIn]
Anmerkungen:
Diese Datenquelle enthält auch Bestandsnachweise, die nicht zu einem Volltext führen.
Beschreibung:
Selective adsorption of C-60 on nanoscale Ge areas can be achieved, while neighboring Si(111) areas remain uncovered, if the whole surface is initially terminated by Bi. Fullerene chemisorption is found at Bi vacancies which form due to partial thermal desorption of the Bi surfactant. The growth rate and temperature dependence of the C-60 adsorption were measured using scanning tunneling microscopy and are described consistently by a rate equation model. The selectivity of the C-60 adsorption can be traced back to an easier vacancy formation in the Bi layer on top of the Ge areas compared to the Si areas. Furthermore, it is also possible to desorb C-60 from Ge areas, allowing the use of C-60 as a resist on the nanoscale.