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Ostapchuk, T. [VerfasserIn]; Petzelt, J. [VerfasserIn]; Ohly, Ch. [VerfasserIn]; Hoffmann-Eifert, S. [VerfasserIn]; Waser, R. [VerfasserIn]; Zelezny, V. [VerfasserIn]; Pashkin, A. [VerfasserIn]; Pokorny, J. [VerfasserIn]; Drbohlav, I. [VerfasserIn]; Kuzel, R. [VerfasserIn]; Rafaja, D. [VerfasserIn]; Gorshunov, B. P. [VerfasserIn]; Dressel, M. [VerfasserIn]

Origin of soft-mode stiffening and reduced dielectric response in SrTiO3 thin films

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  • Medientyp: E-Artikel
  • Titel: Origin of soft-mode stiffening and reduced dielectric response in SrTiO3 thin films
  • Beteiligte: Ostapchuk, T. [VerfasserIn]; Petzelt, J. [VerfasserIn]; Ohly, Ch. [VerfasserIn]; Hoffmann-Eifert, S. [VerfasserIn]; Waser, R. [VerfasserIn]; Zelezny, V. [VerfasserIn]; Pashkin, A. [VerfasserIn]; Pokorny, J. [VerfasserIn]; Drbohlav, I. [VerfasserIn]; Kuzel, R. [VerfasserIn]; Rafaja, D. [VerfasserIn]; Gorshunov, B. P. [VerfasserIn]; Dressel, M. [VerfasserIn]
  • Erschienen: APS, 2002
  • Erschienen in: Physical review / B 66(23), 235406 (2002). doi:10.1103/PhysRevB.66.235406
  • Sprache: Englisch
  • DOI: https://doi.org/10.1103/PhysRevB.66.235406
  • ISSN: 0163-1829
  • Schlagwörter:
  • Entstehung:
  • Anmerkungen: Diese Datenquelle enthält auch Bestandsnachweise, die nicht zu einem Volltext führen.
  • Beschreibung: The problem of the reduced dielectric response in thin films of high-permittivity materials is analyzed by studying the soft-mode response in several SrTiO3 thin films by means of Fourier transform far infrared, monochromatic submillimeter, and micro-Raman spectroscopies. A 300-nm-thick metalorganic chemical vapor deposition film, quasiepitaxially grown on a (0001) sapphire substrate with a perfect <111> orientation, displays a ferroelectric transition near 125 K induced by a tensile residual stress, appearing apparently simultaneously with the antiferrodistortive transition. On the other hand, polycrystalline chemical solution deposition films grown on (0001) sapphire, and also tensile stressed, show a harder soft mode response without the appearance of macroscopic ferroelectricity. This effect, which increases with the film thickness, is explained by a strong depolarizing field induced by the percolated porosity and cracks (in the 10-nm scale) along the boundaries of columnar grains (normal to the probe field direction). Brick-wall model calculations showed that 0.2 vol. % of such a porosity type reduces the permittivity from 30000 to less than 1000. The activation of the forbidden IR modes in the Raman spectra in the whole 80-300-K temperature range studied is explained by the effect of polar grain boundaries, in analogy with the bulk ceramics.
  • Zugangsstatus: Freier Zugang