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Kilper, T. [VerfasserIn]; Beyer, W. [VerfasserIn]; Rech, B. [VerfasserIn]; Reetz, W. [VerfasserIn]; Schmitz, R. [VerfasserIn]; Zastrow, U. [VerfasserIn]; Gordijn, A. [VerfasserIn]; Bräuer, G. [VerfasserIn]; Bronger, T. [VerfasserIn]; Carius, R. [VerfasserIn]; van den Donker, M. N. [VerfasserIn]; Hrunski, D. [VerfasserIn]; Lambertz, A. [VerfasserIn]; Merdzhanova, T. [VerfasserIn]; Mück, A. [VerfasserIn]

Oxygen and nitrogen impurities in microcrystalline silicon deposited under optimized conditions: Influence on material properties and solar cell performance

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  • Medientyp: E-Artikel
  • Titel: Oxygen and nitrogen impurities in microcrystalline silicon deposited under optimized conditions: Influence on material properties and solar cell performance
  • Beteiligte: Kilper, T. [VerfasserIn]; Beyer, W. [VerfasserIn]; Rech, B. [VerfasserIn]; Reetz, W. [VerfasserIn]; Schmitz, R. [VerfasserIn]; Zastrow, U. [VerfasserIn]; Gordijn, A. [VerfasserIn]; Bräuer, G. [VerfasserIn]; Bronger, T. [VerfasserIn]; Carius, R. [VerfasserIn]; van den Donker, M. N. [VerfasserIn]; Hrunski, D. [VerfasserIn]; Lambertz, A. [VerfasserIn]; Merdzhanova, T. [VerfasserIn]; Mück, A. [VerfasserIn]
  • Erschienen: American Institute of Physics, 2009
  • Erschienen in: Journal of applied physics 105, 074509 (2009). doi:10.1063/1.3104781
  • Sprache: Englisch
  • DOI: https://doi.org/10.1063/1.3104781
  • ISSN: 0021-8979
  • Schlagwörter:
  • Entstehung:
  • Anmerkungen: Diese Datenquelle enthält auch Bestandsnachweise, die nicht zu einem Volltext führen.
  • Beschreibung: The influence of oxygen and nitrogen impurities on the performance of thin-film solar cells based on microcrystalline silicon (mu c-Si:H) has been systematically investigated. Single mu c-Si:H layers and complete mu c-Si:H solar cells have been prepared with intentional contamination by admitting oxygen and/or nitrogen during the deposition process. The conversion efficiency of similar to 1.2 mu m thick mu c-Si: H solar cells is deteriorated if the oxygen content in absorber layers exceeds the range from 1.2 x 10(19) to 2 x 10(19) cm(-3); in the case of nitrogen contamination the critical impurity level is lower ([N](critical)=6 x 10(18)-8 x 10(18) cm(-3)). It was revealed that both oxygen and nitrogen impurities thereby modify structural and electrical properties of mu c-Si:H films. It was observed that the both contaminant types act as donors. Efficiency losses due to oxygen or nitrogen impurities are attributed to fill factor decreases and to a reduced external quantum efficiency at wavelengths of >500 nm. In the case of an air leak during the mu c-Si:H deposition process, the cell performance drops at an air leak fraction from 140 to 200 ppm compared to the total gas flow during i-layer deposition. It is demonstrated that oxygen and nitrogen impurities close to the p/i-interface have a stronger effect on the cell performance compared to impurities close to the n/i-interface. Moreover, thick mu c-Si:H solar cells are found to be more impurity-sensitive than thinner cells. (C) 2009 American Institute of Physics. [DOI:10.1063/1.3104781]
  • Zugangsstatus: Freier Zugang