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Beschreibung:
We propose a new type of light modulator at 1.3 and 1.55 mu m using a delta-modulation-doped SiGe-Si multiple-quantum-well structure (delta-MDMQW) integrated in a low-loss silicon-on-insulator (SOI) waveguide, The structure is embedded in the intrinsic region of a vertical p-i-n diode realized on SOI substrate. We present theoretical calculation of the effective index modulation determined by the variation of the confined hole concentration with an applied external field, A practical device is proposed and a calculation of optical modulation efficiency is presented, Estimation of on-off switching time based on evaluation of characteristic time of emission from localized levels in quantum wells and RC characteristics of the device are presented.This device presents the advantage of a broad optical bandwidth in comparison to the modulators based on quantum-confined Stark effect, low insertion loss, high-speed (above 1 GHz), and full compatibility with silicon technology.