Development and characterization of bifacial p-type silicon shingle solar Cells with edge passivation

Medientyp: E-Book

Titel: Development and characterization of bifacial p-type silicon shingle solar Cells with edge passivation

Beteiligte: Baliozian, Puzant [Verfasser]; Wöllenstein, Jürgen [Akademischer Betreuer]; Wöllenstein, Jürgen [Sonstige]; Bett, Andreas W. [Sonstige]

Körperschaft: Albert-Ludwigs-Universität Freiburg, Institut für Mikrosystemtechnik ; Albert-Ludwigs-Universität Freiburg, Fakultät für Angewandte Wissenschaften

Erschienen: Freiburg: Universität, 2022

Umfang: Online-Ressource

Sprache: Englisch

DOI: 10.6094/UNIFR/225690

Identifikator:

Schlagwörter: Solar cells ; Silicon ; (local)doctoralThesis

Entstehung:

Hochschulschrift: Dissertation, Universität Freiburg, 2021

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Beschreibung: Abstract: This dissertation deals with the development and characterization of bifacial p-type shingled passivated edge, emitter, and rear (pSPEER) solar cells. The new cell structure connects the concepts of bifaciality, shingling, and the p-type silicon passivated emitter and rear cell (PERC). To obtain the pSPEER solar cells, full wafer-sized host cells with corresponding metallization layouts are separated into shingle solar cells after contact formation. Recombination at the newly formed cell edges leads to a reduction in pseudo fill factor pFFand thus to losses in energy conversion efficiency. Thermal laser separation (TLS) offers the possibility to obtain smooth cell edges with low surface defect density. In combination with the post-separation passivated edge technology (PET), developed within this work, the TLS technology forms the basis for reducing the surface recombination velocity at the cell edges. The PET process sequence itself encompasses an aluminum oxide (Al2O3) layer formation at low deposition temperatures with a maximum of 130°C by means of thermal atomic layer deposition and a post-deposition annealing (PDA) step that takes place at set temperatures equal or below 200°C. This low temperature processing prevents the damage of already existing metal contacts and passivation layers. Applying TLS and PET on pSPEER solar cells leads to a new cell architecture, called “pSPEERPET”.The TLS process has been optimized throughout the work, such that the impact of the separation process on the electrical performance of the shingle solar cells is minimized. It is found that the pFF losses after TLS are mainly attributed to the formation of the new edges and not to the laser process itself. The applied Al2O3 layers show excellent surface passivation quality after PDA. This is shown, among others, by symmetrically passivated floatzone silicon lifetime samples for which very low effective <br>surface recombination velocities Seff = 4.4 cm/s on p-type silicon and Seff = 5.7 cm/s on n-type silicon are demonstrated. On the cell level, a peak output power density pout = 23.7 mW/cm2 is achieved for a ůSPEERPET solar cell considering 10 mW/cm2 rear side irradiance. A recovery of up to about 80%rel of the separation-related pFF loss by the PET is demonstrated. The progress in the cell separation, the low temperature Al2O3 layer surface passivation, and the edge passivation are also of very high interest for other solar cell types such as silicon heterojunction solar cells and tunnel oxide passivated contacts (TOPCon) solar cells

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