3D investigation of dislocation development in semiconductor wafers by means of x-ray diffraction imaging

Medientyp: E-Book

Titel: 3D investigation of dislocation development in semiconductor wafers by means of x-ray diffraction imaging

Beteiligte: Kabukcuoglu, Merve [Verfasser:in]; Danilewsky, Andreas N. [Akademische:r Betreuer:in]; Baumbach, Tilo [Akademische:r Betreuer:in]; Danilewsky, Andreas N. [Sonstige Person, Familie und Körperschaft]; Fiederle, Michael [Sonstige Person, Familie und Körperschaft]

Körperschaft: Albert-Ludwigs-Universität Freiburg, Fakultät für Umwelt und Natürliche Ressourcen

Erschienen: Freiburg: Universität, 2022

Umfang: Online-Ressource

Sprache: Englisch

DOI: 10.6094/UNIFR/228249

Identifikator:

Schlagwörter: Versetzung ; Versetzungsbewegung ; Plastische Deformation ; Kristalliner Festkörper ; Metallischer Werkstoff ; Durchstrahlungselektronenmikroskopie ; (local)doctoralThesis

Entstehung:

Hochschulschrift: Dissertation, Universität Freiburg, 2022

Anmerkungen:

Beschreibung: Abstract: Dislocations in crystalline materials are known to play a crucial role in today’s semiconductor technology since they can critically impact the fabrication yield and the performance of the fabricated electronic devices. In particular, the ongoing miniaturization of electronically active structures towards (sub-)nm scales gives rise for higher and higher demands on material quality and processing steps since in this case even atomic scale crystal defects can have a large influence. Hence, the knowledge about the behavior of dislocations is both of high scientific and industrial interest. <br>This work focuses on the 2D and 3D investigation of the generation and the development of dislocations into the bulk of semiconductor materials, originating from mechanical surface damage and driven by thermally induced forces. With silicon and gallium arsenide, materials with high commercial relevance are studied while a special focus lies on industrially relevant sample volumes (i.e., few mm3 sized wafers) and conditions (i.e., handling and thermal treatment). To provide the high penetration capability required for such studies as well as to ensure non-destructive investigations for time-resolved in situ studies, synchrotron X-ray diffraction imaging methods are employed. Moreover, a comprehensive picture of dislocation development is created by correlating different in situ and ex situ X-ray imaging techniques and using complementary information from thermal imaging. To emulate typical industrial wafer treatments for representative studies, the investigated samples were mechanically indented in a well-defined way, followed by controlled and monitored heating. Further, suitable experimental in situ and quasi in situ schemes were developed and implemented, including the technological improvements of a double ellipsoidal mirror heater, the implementation of thermal monitoring via thermal imaging, and the elaboration of suitable heating profiles.<br>By using methods like X-ray white beam topography and X-ray diffraction laminography, both the evolution of dense dislocation arrangements and individual dislocations were investigated, considering different parameters for mechanical surface damage (indentation tips, forces, orientations and patterns), different heating profiles (spike and plateau annealing, ramping), as well as different sample orientations. In particular, the relation of dislocation evolution and the driving thermal stresses was examined. As a result, direct evidence, e.g., of cross-slipping events, Frank-Read multiplication sources, and dislocation interactions were revealed even within dense dislocation arrangements and, for the first time, with temporal resolution in 3D. Further, the systematic study of gallium arsenide samples using different crystallographic orientations showed the combined influence of thermal stress and crystal polarity on dislocation development. Based on the obtained results, the existing 3D models for slip band formation in materials with diamond and zinc-blende structure were successfully verified, refined and extended, potentially leading to new and improved possibilities for prediction and avoidance of dislocations in semiconductors under industrially relevant conditions

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