• Medientyp: E-Artikel
  • Titel: 20–25 Gbit/s low-power inductor-less single-chip optical receiver and transmitter frontend in 28 nm digital CMOS
  • Beteiligte: Szilàgyi, Làszlò [VerfasserIn]; Belfiore, Guido [VerfasserIn]; Henker, Ronny [VerfasserIn]; Ellinger, Frank [VerfasserIn]
  • Erschienen: Cambridge : Cambridge University Press, [2020]
  • Sprache: Englisch
  • DOI: 10.1017/S1759078717000472
  • ISSN: 1759-0787
  • Schlagwörter: Aktive Schaltungen ; RF front-ends ; Technik ; Broadband amplifiers ; RF Front-Ends ; Active circuits ; Breitbandverstärker ; technology
  • Entstehung:
  • Anmerkungen: Hinweis: Link zum Artikel der zuerst in der Zeitschrift 'International journal of microwave and wireless technologies' erschienen ist DOI: 10.1017/S1759078717000472
  • Beschreibung: The design of an analog frontend including a receiver amplifier (RX) and laser diode driver (LDD) for optical communication system is described. The RX consists of a transimpedance amplifier, a limiting amplifier, and an output buffer (BUF). An offset compensation and common-mode control circuit is designed using switched-capacitor technique to save chip area, provides continuous reduction of the offset in the RX. Active-peaking methods are used to enhance the bandwidth and gain. The very low gate-oxide breakdown voltage of transistors in deep sub-micron technologies is overcome in the LDD by implementing a topology which has the amplifier placed in a floating well. It comprises a level shifter, a pre-amplifier, and the driver stage. The single-chip frontend, fabricated in a 28 nm bulk-digital complementary metal–oxide–semiconductor (CMOS) process has a total active area of 0.003 mm² , is among the smallest optical frontends. Without the BUF, which consumes 8 mW from a separate supply, the RX power consumption is 21 mW, while the LDD consumes 32 mW. Small-signal gain and bandwidth are measured. A photo diode and laser diode are bonded to the chip on a test-printed circuit board. Electro-optical measurements show an error-free detection with a bit error rate of 10⁻¹² at 20 Gbit/s of the RX at and a 25 Gbit/s transmission of the LDD.
  • Zugangsstatus: Freier Zugang
  • Rechte-/Nutzungshinweise: Urheberrechtsschutz