Dietrich, Christof P.
[Verfasser:in];
Lange, Mike
[Verfasser:in];
Benndorf, Gesa
[Verfasser:in];
Lenzner, Jörg
[Verfasser:in];
Lorenz, Michael
[Verfasser:in];
Grundmann, Marius
[Verfasser:in]
Competing exciton localization effects due to disorder and shallow defects in semiconductor alloys
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Medientyp:
E-Artikel
Titel:
Competing exciton localization effects due to disorder and shallow defects in semiconductor alloys
Beteiligte:
Dietrich, Christof P.
[Verfasser:in];
Lange, Mike
[Verfasser:in];
Benndorf, Gesa
[Verfasser:in];
Lenzner, Jörg
[Verfasser:in];
Lorenz, Michael
[Verfasser:in];
Grundmann, Marius
[Verfasser:in]
Beschreibung:
We demonstrate that excitons in semiconductor alloys are subjectto competing localization effects due to disorder (random potential fluctuations)and shallow point defects (impurities). The relative importance of these effectsvaries with alloy chemical composition, impurity activation energy as well astemperature. We evaluate this effect quantitatively for MgxZn1−xO : Al (0 6x 6 0.058) and find that exciton localization at low (2 K) and high (300 K)temperatures is dominated by shallow donor impurities and alloy disorder,respectively.