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Brillson, Leonard [VerfasserIn]; Cox, Jonathan [VerfasserIn]; Gao, Hantian [VerfasserIn]; Foster, Geoffrey [VerfasserIn]; Ruane, William [VerfasserIn]; Jarjour, Alexander [VerfasserIn]; Allen, Martin [VerfasserIn]; Look, David [VerfasserIn]; von Wenckstern, Holger [VerfasserIn]; Grundmann, Marius [VerfasserIn]

Native Point Defect Measurement and Manipulation in ZnO Nanostructures

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  • Medientyp: E-Artikel
  • Titel: Native Point Defect Measurement and Manipulation in ZnO Nanostructures
  • Beteiligte: Brillson, Leonard [VerfasserIn]; Cox, Jonathan [VerfasserIn]; Gao, Hantian [VerfasserIn]; Foster, Geoffrey [VerfasserIn]; Ruane, William [VerfasserIn]; Jarjour, Alexander [VerfasserIn]; Allen, Martin [VerfasserIn]; Look, David [VerfasserIn]; von Wenckstern, Holger [VerfasserIn]; Grundmann, Marius [VerfasserIn]
  • Erschienen: Basel: MDPI, [2023]
  • Erschienen in: Materials ; 12,14, (2019)
  • Sprache: Englisch
  • Schlagwörter: nanowires ; interface ; nanostructures ; native point defects ; electronic measurement ; cathodoluminescence spectroscopy
  • Entstehung:
  • Anmerkungen:
  • Beschreibung: This review presents recent research advances in measuring native point defects in ZnOnanostructures, establishing how these defects affect nanoscale electronic properties, and developingnew techniques to manipulate these defects to control nano- and micro- wire electronic properties.From spatially-resolved cathodoluminescence spectroscopy, we now know that electrically-activenative point defects are present inside, as well as at the surfaces of, ZnO and other semiconductornanostructures. These defects within nanowires and at their metal interfaces can dominateelectrical contact properties, yet they are sensitive to manipulation by chemical interactions, energybeams, as well as applied electrical fields. Non-uniform defect distributions are common amongsemiconductors, and their effects are magnified in semiconductor nanostructures so that theirelectronic effects are significant. The ability to measure native point defects directly on a nanoscaleand manipulate their spatial distributions by multiple techniques presents exciting possibilities forfuture ZnO nanoscale electronics.
  • Zugangsstatus: Freier Zugang
  • Rechte-/Nutzungshinweise: Namensnennung (CC BY)