Beschreibung:
<jats:p>Gold was diffused into arsenic-doped silicon slices with initial resistivity of 0.3 or 5 Ω·cm at temperatures between 850° and 1250°C for times sufficiently long that the gold concentration was essentially constant, except for a very thin surface region which had a much larger concentration. The gold concentration was determined by means of neutron activation analysis. It was found that the gold concentrations were lower than would be expected from published solubility data when diffusion occurred at temperatures below 1100°C. Several surface treatments were found to result in similar gold concentrations when an evaporated gold film was used as the source. The measured room-temperature resistivity was found to be in fair agreement with computations using accepted values for the various silicon parameters and the gold energy levels. Although refinements in the calculations and improved experimental techniques are both still necessary, it has been shown that the qualitative features of the model on which the calculations are based are certainly correct. It has also been shown that gold diffusions in silicon with a moderate dislocation density can be carried out satisfactorily in an oxidizing atmosphere.</jats:p>