Beschreibung:
<jats:p>We study the properties of Si-doped AlN films grown on 6H-SiC(0001) by plasma-assisted molecular beam epitaxy. Whereas nominally undoped AlN films are invariably insulating in nature, Si-doped films are found to be semiconducting with an electron concentration up to 7.4×1017cm−3, and a resistivity approaching 1 Ω cm at room temperature. Even heavy Si-doping (1×1020cm−3) does not degrade the structural properties of the AlN films. The morphology of these films is characterized by Si-induced step-bunching, but remains smooth with a rms roughness of about 1 nm.</jats:p>