Beschreibung:
<jats:p>Electron beam induced conductivity measurement has been used for investigating the internal electrical field distribution in porous silicon based diode structures. Two carrier collection current peaks were found; one corresponding to the metal-silicon contact region, the second to the interface between the porous and the single-crystalline parts of the structure. It is shown that the latter peak is caused by the built-in electrical field at the contact between silicon and the electrolyte remaining in the pores.</jats:p>