Beschreibung:
<jats:p>A thin Er2O3 layer grown on a Si surface by vapor doping of Er exhibits intense photoluminescence in the green and red regions excited by laser beams in the 800 nm and 450–490 nm ranges. These intense light emissions take place via resonant two or one step photoexcitations of the 4f levels in Er3+ ions. Our sample fabrication procedure is integrated circuit compatible and produces Er2O3 layers of excellent homogeneity and quality as demonstrated in the optical measurements.</jats:p>