Beschreibung:
<jats:p>The authors demonstrate a technique to mechanically tilt GaAs membranes out of the substrate plane by an arbitrary angle. Tilting is achieved by dosing a thin line of a perforated membrane with Ga ions using a focused ion beam. The change in material properties at the dosing site initiates a tilt about this axis that is monitored in situ to achieve the desired angle. The authors apply this technique to modify the emission direction of photonic crystal cavity, quantum dot light sources.</jats:p>