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Medientyp:
E-Artikel
Titel:
Metastable behavior of the UV luminescence in Mg-doped GaN layers grown on quasibulk GaN templates
Beteiligte:
Pozina, G.;
Paskov, P. P.;
Bergman, J. P.;
Hemmingsson, C.;
Hultman, L.;
Monemar, B.;
Amano, H.;
Akasaki, I.;
Usui, A.
Erschienen:
AIP Publishing, 2007
Erschienen in:Applied Physics Letters
Sprache:
Englisch
DOI:
10.1063/1.2809407
ISSN:
0003-6951;
1077-3118
Entstehung:
Anmerkungen:
Beschreibung:
<jats:p>Metastability of near band gap UV emissions in Mg-doped GaN layers grown by metal-organic vapor phase epitaxy on thick GaN templates grown by halide vapor phase epitaxy has been studied by cathodoluminescence (CL). The CL spectrum changes its initial shape within a few minutes under electron irradiation. The acceptor bound exciton line vanishes while the emissions related to the stacking faults (SFs) of different geometry rise significantly. The increase of the defect-related luminescence is likely caused by recombination enhanced SF formation under electron irradiation. The CL spectrum transformation is permanent at low temperatures; however, the metastable process is reversible if samples are heated to room temperature.</jats:p>