Caldwell, Joshua D.;
Mastro, Michael A.;
Hobart, Karl D.;
Glembocki, Orest J.;
Eddy, Charles R.;
Bassim, Nabil D.;
Holm, R. T.;
Henry, Richard L.;
Twigg, Mark E.;
Kub, Fritz;
Neudeck, Phillip G.;
Trunek, Andrew J.;
Powell, J. Anthony
Improved ultraviolet emission from reduced defect gallium nitride homojunctions grown on step-free 4H-SiC mesas
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Medientyp:
E-Artikel
Titel:
Improved ultraviolet emission from reduced defect gallium nitride homojunctions grown on step-free 4H-SiC mesas
Beteiligte:
Caldwell, Joshua D.;
Mastro, Michael A.;
Hobart, Karl D.;
Glembocki, Orest J.;
Eddy, Charles R.;
Bassim, Nabil D.;
Holm, R. T.;
Henry, Richard L.;
Twigg, Mark E.;
Kub, Fritz;
Neudeck, Phillip G.;
Trunek, Andrew J.;
Powell, J. Anthony
Beschreibung:
We previously reported 100-fold reductions in III-N heterofilm threading dislocation density achieved via growth on top of (0001) 4H-SiC mesas completely free of atomic scale steps. This letter compares the electroluminescent (EL) output of GaN pn junctions grown on top of 4H-SiC mesas with and without such steps. An average of 49% enhancement of the ultraviolet luminescence (380nm) was observed in step-free mesas over comparable “stepped” counterparts. Despite the intense EL from the step-free devices, significant leakage was observed through the periphery of the device, possibly due to the lack of GaN junction isolation processing.