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Medientyp:
E-Artikel
Titel:
Deep levels in iron doped n- and p-type 4H-SiC
Beteiligte:
Beyer, F. C.;
Hemmingsson, C. G;
Leone, S.;
Lin, Y.-C.;
Gällström, A.;
Henry, A.;
Janzén, E.
Erschienen:
AIP Publishing, 2011
Erschienen in:Journal of Applied Physics
Sprache:
Englisch
DOI:
10.1063/1.3669401
ISSN:
0021-8979;
1089-7550
Entstehung:
Anmerkungen:
Beschreibung:
<jats:p>Deep levels were detected in Fe-doped n- and p-type 4H-SiC using deep level transient spectroscopy (DLTS). One defect level (EC–0.39 eV) was detected in n-type material. DLTS spectra of p-type 4H-SiC show two dominant peaks (EV + 0.97 eV and EV + 1.46 eV). Secondary ion mass spectrometry measurements confirm the presence of Fe in both n- and p-type 4H-SiC epitaxial layers. The majority of the capture process for Fe1, Fe2, and Fe3 is multi-phonon emission assisted. These three detected peaks are suggested to be related to Fe.</jats:p>