Beschreibung:
<jats:p>Microwave reflectivity can be used to probe the electrical properties of the semiconductor/solution interface by measuring the reflectivity response to a modulation in the band bending. We use a multiphase stratified media model to calculate the microwave reflectivity for a semiconductor in contact with a solution. The reflectivity change produced by such systems is related to the frequency of the microwave source, the thickness of the semiconductor, the thickness of the space charge layer of the semiconductor, the dielectric constants, and conductivities of the various media. The sensitivity factor of this model is compared to experimental results for silicon surfaces.</jats:p>