Beschreibung:
<jats:p>A comparison of the properties of ZnSe and ZnS, both Mn-doped as the semiconductor layers in ‘‘identical’’ electroluminescent devices of MISIM (metal–insulator–semiconductor–insulator–metal) type shows smaller threshold voltage and tenfold lower saturation brightness levels for ZnSe. The reason can be shown to be a temperature quenching of the Mn2+ emission, which at 100 K leads to the same efficiencies of ZnS and ZnSe. Thus at low temperature ZnSe is even better because of the lower threshold but at room temperature even local temperature variations might badly influence brightness homogeneity.</jats:p>