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Medientyp:
E-Artikel
Titel:
Infrared detectors based on semiconductor p-n junction of PbSe
Beteiligte:
Kasiyan, Vladimir;
Dashevsky, Zinovi;
Minna Schwarz, Casey;
Shatkhin, M.;
Flitsiyan, Elena;
Chernyak, Leonid;
Khokhlov, Dmitry
Erschienen:
AIP Publishing, 2012
Erschienen in:Journal of Applied Physics
Sprache:
Englisch
DOI:
10.1063/1.4759011
ISSN:
0021-8979;
1089-7550
Entstehung:
Anmerkungen:
Beschreibung:
<jats:p>P-n junctions based on physical vapor deposition of thin PbSe films and conductivity type inversion from n- to p-type are developed and characterized over a wide range of temperatures and bias voltages. Photosensitivity and diode characteristics in the thin film PbSe diode structures were found at temperatures up to 300 K. The values of the measured and estimated parameters of these structures demonstrate their high photodetector performance and the potential for development of IR detectors with optimal sensitivity at the highest possible operating temperature.</jats:p>