Hille, P.;
Walther, F.;
Klement, P.;
Müßener, J.;
Schörmann, J.;
Kaupe, J.;
Mitić, S.;
Rosemann, N. W.;
Chatterjee, S.;
Beyer, A.;
Gries, K. I.;
Volz, K.;
Eickhoff, M.
Influence of the atom source operating parameters on the structural and optical properties of InxGa1−xN nanowires grown by plasma-assisted molecular beam epitaxy
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Medientyp:
E-Artikel
Titel:
Influence of the atom source operating parameters on the structural and optical properties of InxGa1−xN nanowires grown by plasma-assisted molecular beam epitaxy
Beteiligte:
Hille, P.;
Walther, F.;
Klement, P.;
Müßener, J.;
Schörmann, J.;
Kaupe, J.;
Mitić, S.;
Rosemann, N. W.;
Chatterjee, S.;
Beyer, A.;
Gries, K. I.;
Volz, K.;
Eickhoff, M.
Beschreibung:
<jats:p>The influence of the atom source operating parameters on the structural and optical properties of InxGa1−xN/GaN nanowires (NWs) grown by plasma-assisted molecular beam epitaxy is investigated. Electron microscopy and photoluminescence spectroscopy reveal a change of the NW tip morphology and an enhancement of the local indium incorporation with increasing nitrogen flux. Tuning the density ratio of atomic-to-excited molecular nitrogen to lower values minimizes the point defect density, which results in a decrease of the non-radiative recombination rate as demonstrated by a combination of continuous wave and time-resolved photoluminescence spectroscopy.</jats:p>