Beschreibung:
<jats:p>We have investigated the electron loss spectra of precipitates formed in annealed silicon crystals. The precipitates, as well as residue of the precipitates in precipitation sites, uniquely give rise to an energy loss at 532 eV. The energy loss is due to the excitation of oxygen 1s electrons. The precipitates are therefore identified as silicon oxide.</jats:p>